SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND OPTICAL APPARATUS
This semiconductor device includes a substrate, an underlayer formed on a main surface of the substrate, a first semiconductor layer and a second semiconductor layer. Unstrained lattice constants of the underlayer and the second semiconductor layer in a second direction are larger than a lattice constant of the substrate in the second direction in an unstrained state. Lattice constants of the underlayer and the second semiconductor layer in the second direction in a state of being formed on the main surface are larger than the lattice constant of the substrate in the second direction.
1 . A semiconductor device comprising:
a substrate made of a nitride-based semiconductor having a main surface parallel to a first direction and a second direction intersecting with said first direction;
an underlayer made of a nitride-based semiconductor formed on said main surface;
a first semiconductor layer made of a nitride-based semiconductor formed on an opposite surface of said underlayer to said substrate; and
a second semiconductor layer made of a nitride-based semiconductor formed on an opposite surface of said first semiconductor layer to said underlayer, wherein
a step portion extending along said first direction is formed on said main surface,
unstrained lattice constants of said underlayer and said second semiconductor layer in said second direction are larger than a lattice constant of said substrate in said second direction in an unstrained state, and
lattice constants of said underlayer and said second semiconductor layer in said second direction in a state of being formed on said main surface of said substrate are larger than said lattice constant of said substrate in said second direction.
2 . The semiconductor device according to claim 1 , wherein
said lattice constant of said underlayer in said second direction in a region other than at least said step portion of said main surface is larger than said lattice constant of said substrate in said second direction, and
said lattice constant of said second semiconductor layer in said second direction in a region other than at least said step portion of said main surface is larger than said lattice constant of said substrate in said second direction.
3 . The semiconductor device according to claim 1 , wherein
said underlayer is formed on said substrate in a state where a strain of said underlayer in said first direction is larger than a strain of said underlayer in said second direction.
4 . The semiconductor device according to claim 1 , wherein
a lattice constant of said underlayer in said first direction in a state where said underlayer is formed on said main surface of said substrate is substantially equal to a lattice constant of said substrate in said first direction.
5 . The semiconductor device according to claim 1 , wherein
a lattice constant of said second semiconductor layer in said first direction in a state where said second semiconductor layer is formed on said surface of said first semiconductor layer is substantially equal to a lattice constant of said underlayer in said first direction in a state where said underlayer is formed on said main surface.
6 . The semiconductor device according to claim 1 , wherein
said lattice constant of said second semiconductor layer in said second direction in a state where said second semiconductor layer is formed on said surface of said first semiconductor layer is substantially equal to said lattice constant of said underlayer in said second direction in a state where said underlayer is formed on said main surface.
7 . The semiconductor device according to claim 1 , wherein
a thickness of said underlayer is larger than a thickness of said first semiconductor layer.
8 . The semiconductor device according to claim 1 , wherein
an unstrained lattice constant of said first semiconductor layer in said first direction is smaller than an unstrained lattice constant of said underlayer in said first direction, and
an unstrained lattice constant of said first semiconductor layer in said second direction is smaller than said unstrained lattice constant of said underlayer in said second direction.
9 . The semiconductor device according to claim 1 , wherein
said substrate does not contain In, and said underlayer and said second semiconductor layer contain In.
10 . The semiconductor device according to claim 9 , wherein
a content of In in said second semiconductor layer is larger than a content of In in said underlayer.
11 . The semiconductor device according to claim 9 , wherein
said underlayer is made of InGaN.
12 . The semiconductor device according to claim 9 , wherein
said second semiconductor layer is made of InGaN.
13 . The semiconductor device according to claim 1 , wherein
a thickness of said underlayer in a region other than said step portion is smaller than a height of said step portion.
14 . The semiconductor device according to claim 1 , wherein
said step portion has a side surface extending along said first direction, and
said side surface is inclined by an acute angle to said main surface of said substrate in a region other than said step portion.
15 . The semiconductor device according to claim 1 , wherein
said second semiconductor layer includes an active layer having a well layer, and
an unstrained lattice constant of said well layer in said second direction is larger than said lattice constant of said substrate in said second direction in an unstrained state.
16 . The semiconductor device according to claim 15 , wherein
said second semiconductor layer is a semiconductor laser device layer including said active layer, and
said second semiconductor layer has a waveguide extending along said first direction.
17 . The semiconductor device according to claim 13 , wherein
said step portion has a portion without said underlayer or a portion where a thickness of said underlayer in said step portion is smaller than a thickness of said underlayer in a region other than said step portion.
18 . A method of manufacturing a semiconductor device comprising steps of:
forming a step portion extending along a first direction on a main surface of a substrate made of a nitride-based semiconductor having said main surface parallel to said first direction and a second direction intersecting with said first direction;
forming an underlayer made of a nitride-based semiconductor on said main surface of said substrate;
forming a first semiconductor layer made of a nitride-based semiconductor on a surface of said underlayer on an opposite side to said substrate; and
forming a second semiconductor layer made of a nitride-based semiconductor on a surface of said first semiconductor layer on an opposite side to said underlayer, wherein
unstrained lattice constants of said underlayer and said second semiconductor layer in said second direction are larger than a lattice constant of said substrate in said second direction in an unstrained state, and
said step of forming said underlayer and said step of forming said second semiconductor layer include a step of forming said underlayer and said second semiconductor layer so that lattice constants of said underlayer and said second semiconductor layer in said second direction are larger than said lattice constant of said substrate in said second direction.
19 . The method of manufacturing a semiconductor device according to claim 18 , wherein
said step of forming said underlayer includes a step of growing said underlayer at a first temperature,
said step of forming said first semiconductor layer includes a step of growing said first semiconductor layer at a second temperature,
said step of forming said second semiconductor layer includes a step of growing said second semiconductor layer at a third temperature, and
said first temperature is higher than said third temperature.
20 . An optical apparatus comprising:
a semiconductor device; and
an optical system adjusting emission light from said semiconductor device,
said semiconductor device includes:
a substrate made of a nitride-based semiconductor having a main surface parallel to a first direction and a second direction intersecting with said first direction;
an underlayer made of a nitride-based semiconductor formed on said main surface;
a first semiconductor layer made of a nitride-based semiconductor formed on an opposite surface of said underlayer to said substrate; and
a second semiconductor layer made of a nitride-based semiconductor formed on an opposite surface of said first semiconductor layer to said underlayer, wherein
a step portion extending along said first direction is formed on said main surface of said substrate,
unstrained lattice constants of said underlayer and said second semiconductor layer in said second direction are larger than a lattice constant of said substrate in said second direction in an unstrained state, and
lattice constants of said underlayer and said second semiconductor layer in said second direction in a state of being formed on said main surface of said substrate are larger than said lattice constant of said substrate in said second direction.