Nitride-based semiconductor element and method of forming nitride-based semiconductor
A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.
1. A nitride-based semiconductor light-emitting device comprising:
a substrate comprising a surface having projection portions and recess portions;
a buffer layer formed on bottom surfaces of said recess portions; and
a nitride-based semiconductor layer formed on said buffer layer, wherein
said buffer layer is formed not to be in contact with upper surfaces of said projection portions.
2. The nitride-based semiconductor light-emitting device according to claim 1 , wherein
said nitride-based semiconductor layer has a flat surface.
3. A nitride-based semiconductor light-emitting device comprising:
a substrate comprising a surface having projection portions and recess portions;
a buffer layer formed on bottom surfaces of said recess portions;
a nitride-based semiconductor layer formed on side surfaces of said recess portions; and
an n-type cladding layer, an emission layer and a p-type cladding layer, formed on said nitride-based semiconductor layer; wherein
said recess portions or said projection portions are formed in a circular, hexagonal or triangular shape in a plan view.
4. The nitride-based semiconductor light-emitting device according to claim 1 , wherein
said substrate includes a substrate selected from a group consisting of a sapphire substrate, a spinel substrate, an Si substrate, an SiC substrate, a GaN substrate, a GaAs substrate, a GaP substrate, an InP substrate, a ZrB2 substrate and a quartz substrate.
5. The nitride-based semiconductor light-emitting device according to claim 3 , wherein
said nitride-based semiconductor layer has a flat surface.
6. The nitride-based semiconductor light-emitting device according to claim 3 , wherein
said substrate includes a substrate selected from a group consisting of a sapphire substrate, a spinel substrate, an Si substrate, an SiC substrate, a GaN substrate, a GaAs substrate, a GaP substrate, an InP substrate, a ZrB2 substrate and a quartz substrate.
7. A nitride-based semiconductor light-emitting device comprising:
a substrate comprising a surface having projection portions and recess portions;
a buffer layer formed on bottom surfaces of said recess portions;
a nitride-based semiconductor layer formed on side surfaces of said recess portions; and
an n-type layer, an emission layer and a p-type layer, formed on said nitride-based semiconductor layer, wherein
said recess portions or said projection portions are formed in a circular, hexagonal or triangular shape in a plan view.
8. A nitride-based semiconductor light-emitting device comprising:
a substrate including a surface having projection portions and recess portions;
a buffer layer formed on bottom surfaces of said recess portions; and
a nitride-based semiconductor layer formed on side surfaces of said recess portions, wherein
said recess portions or said projection portions are formed in a circular, hexagonal or triangular shape in a plan view.
9. A nitride-based semiconductor light-emitting device comprising:
a substrate including a surface having projection portions and recess portions;
a buffer layer formed on bottom surfaces of said recess portions; and
a nitride-based semiconductor layer formed on side surfaces of said recess portions, wherein
bottom surfaces of said recess portions are formed in a width within the range of several 100 nm to several 10 μm.
10. The nitride-based semiconductor light-emitting device according to claim 7 , wherein
said nitride-based semiconductor layer has a flat surface.
11. The nitride-based semiconductor light-emitting device
according to claim 7 , wherein
said substrate includes a substrate selected from a group consisting of a sapphire substrate, a spinel substrate, an Si substrate, an SiC substrate, a GaN substrate, a GaAs substrate, a GaP substrate, an InP substrate, a ZrB2 substrate and a quartz substrate.
12. The nitride-based semiconductor light-emitting device according to claim 7 , wherein
bottom surfaces of the recess portions are formed in a width within the range of several 100 nm to several 10 μm.
13. The nitride-based semiconductor light-emitting device according to claim 8 , wherein
said nitride-based semiconductor layer has a flat surface.
14. The nitride-based semiconductor light-emitting device according to claim 8 , wherein
said substrate includes a substrate selected from a group consisting of a sapphire substrate, a spinel substrate, an Si substrate, an SiC substrate, a GaN substrate, a GaAs substrate, a GaP substrate, an InP substrate, a ZrB2 substrate and a quartz substrate.
15. The nitride-based semiconductor light-emitting device according to claim 8 , wherein
bottom surfaces of the recess portions are formed in a width within the range of several 100 nm to several 10 μm.
16. The nitride-based semiconductor light-emitting device according to claim 9 , wherein
said nitride-based semiconductor layer has a flat surface.
17. The nitride-based semiconductor light-emitting device according to claim 9 , wherein
said substrate includes a substrate selected from a group consisting of a sapphire substrate, a spinel substrate, an Si substrate, an SiC substrate, a GaN substrate, a GaAs substrate, a GaP substrate, an InP substrate, a ZrB2 substrate and a quartz substrate.
18. The nitride-based semiconductor light-emitting device according to claim 3 , wherein
bottom surfaces of the recess portions are formed in a width within the range of several 100 nm to several 10 μm.
19. A nitride-based semiconductor light-emitting device comprising:
a substrate comprising a surface having projection portions and recess portions;
a buffer layer formed on bottom surfaces of said recess portions; and
a nitride-based semiconductor layer formed on side surfaces of said recess portions, wherein
said projection portions are in the form of a mesa.
20. A nitride-based semiconductor light-emitting device comprising:
a substrate comprising a surface having projection portions and recess portions;
a buffer layer formed on bottom surfaces of said recess portions; and
a nitride-based semiconductor layer formed on side surfaces of said recess portions, wherein
upper parts of said recess portions are larger in width than bottom parts of said recess portions.