Photoresist compositions comprising acetals and ketals as solvents
View Patent ↗Disclosed is a photoresist composition comprising: a) at least one film forming resin selected from the group consisting of novolak resins, and polyhydroxystyrenes; b) at least one photoactive compound or photoacid generator; and c) a solvent composition comprising at least one solvent selected from the group consisting of acetals and ketals. Also disclosed is a photoresist composition comprising a polycarbonate resin and a solvent composition comprising at least one solvent selected from the group consisting of acetals and ketals. Also disclosed is a process for imaging a photoresist composition, comprising the steps of: a) coating a suitable substrate with any of the aforementioned photoresist compositions; b) baking the substrate to substantially remove the solvent; c) imagewise irradiating the photoresist film; and d) removing the imagewise exposed or, alternatively, the unexposed areas of the coated substrate with a suitable developer.
1. A photoresist composition comprising: a) at least one film forming resin selected from the group consisting of novolak resins and polyhydroxystyrenes; b) at least one photoactive compound or photoacid generator; and c) a solvent composition comprising at least one photoresist solvent and at least one solvent selected from the group consisting of acetals and ketals, wherein the amount of the solvent selected from the group consisting of acetels and ketals ranges from between about 6% to about 15% based on the total weight of the photoresist composition.
2. The photoresist composition of claim 1 , wherein the acetal or ketal is an acyclic compound.
3. The photoresist composition of claim 1 , wherein the acetal or ketal is a cyclic compound.
4. The photoresist composition of claim 2 , wherein the acetal or ketal is represented by the formula
R 3 —O—(CR 1 R 2 )—O—R 4
wherein R 1 and R 2 are independently hydrogen or a hydrocarbyl group of 1 to about 10 carbon atoms; and R 3 and R 4 are independently hydrocarbyl groups of 1 to about 10 carbon atoms.
5. The composition of claim 4 , wherein the hydrocarbyl groups are alkyl groups.
6. The photoresist composition of claim 3 , wherein the cyclic compound is a 4-7 member ring compound.
7. The photoresist composition of claim 6 , wherein the ring compound is represented by the formula
wherein R 1 -R 4 are independently hydrogen, or hydrocarbyl groups of 1 to about 10 carbon atoms, and n is 1, 2, 3, or 4.
8. The photoresist composition of claim 1 , wherein the solvent selected from the group consisting of acetals and ketals is 1,3-dioxolane.
9. The photoresist composition of claim 1 , wherein the solvent composition is a mixture of at least one photoresist solvent selected from the group consisting of propylene glycol methyl ether acetate (PGMEA), ethyl lactate and propylene glycol methyl ether (PGME) and the solvent selected from the group consisting of acetals and ketals is is 1,3-dioxolane.
10. The photoresist composition of claim 1 , wherein the solvent selected from the group consisting of acetals and ketals comprises at least one compound selected from the group consisting of dimethoxymethane and diethoxymethane.
11. The photoresist composition of claim 1 , wherein the photoactive compound is a diazonaphthoquinone sulfonate ester.
12. The photoresist composition of claim 1 wherein the film forming resin is a novolak resin.
13. The photoresist composition of claim 1 that is a chemically amplified photoresist composition comprising a photoacid generator.
14. The photoresist composition of claim 1 , capable of forming photoresists having a resist film thickness of 1 to about 100 μm.
15. The photoresist composition of claim 14 , wherein the photoresist has a film thickness of at least 30 μm.
16. The photoresist composition of claim 14 , wherein the photoresist has a film thickness of at least 50 μm.
17. A process for imaging a photoresist composition, comprising the steps of:
a) coating a substrate with a film of photoresist composition of claim 1 ;
b) baking the substrate to substantially remove the solvent;
c) imagewise irradiating the photoresist film; and
d) removing the imagewise exposed or, alternatively, the unexposed areas of the coated substrate with a suitable developer.
18. The process of claim 17 , wherein the film of photoresist composition has a film thickness of at least 30 μm after step (b).
19. The process of claim 17 , wherein the film of photoresist composition has a film thickness of at least 50 μm after step (b).
20. The process of claim 17 , wherein the substrate is a semiconductor wafer.
21. A photoresist composition comprising a polycarbonate resin and a solvent composition comprising at least one solvent selected from the group consisting of acetals and ketals.
22. The photoresist composition of claim 21 , wherein the polycarbonate resin is a homopolycarbonate based on Bisphenol A.
23. The photoresist composition of claim 21 , wherein the polycarbonate resin has a weight average molecular weight (M w ) of about 2000 to about 100,000.
24. The photoresist composition of claim 21 , wherein the polycarbonate resin has a weight average molecular weight (M w ) is about 10,000 to about 60,000.
25. A process for imaging a photoresist composition, comprising the steps of:
a) coating a substrate with a film of photoresist composition of claim 21 ;
b) baking the substrate to substantially remove the solvent;
c) imagewise irradiating the photoresist film; and
d) removing the imagewise exposed or, alternatively, the unexposed areas of the coated substrate with a suitable developer.
26. The photoresist composition of claim 1 wherein the film forming resin is a polyhydroxystyrene.