Patent Assignment
Reel/Frame 034742/0206
Assignment of Assignor's Interest
Recorded: 2015-01-08
Pages: 13
Assignor
AZ ELECTRONIC MATERIALS USA CORP.
Executed: 2014-12-12
Assignee
MERCK PATENT GMBH
FRANKFURTER STRASSE 250, DARMSTADT, 64293, GERMANY
Covered Properties
(137)
Metal Ion Reduction in Novolak Resin Using an Ion Exchange Catalyst in a Polar Solvent and Photoresists Compositions Therefrom
Patent:
5,521,052 →
Application:
08/365,659 →
Radiation Sensitive Composition
Patent:
5,595,855 →
Application:
08/390,045 →
Radiation-Sensitive Mixture Comprising a Basic Iodonium Compound
Patent:
5,663,035 →
Application:
08/420,787 →
Silicon-Containing Copolymer and Method of Producing Same
Patent:
5,596,062 →
Application:
08/516,562 →
Antireflective Coating for Photoresist Compositions
Patent:
5,733,714 →
Application:
08/724,109 →
Composition for Forming Ceramic Material and Process for Producing Ceramic Material
Patent:
5,922,411 →
Application:
08/793,943 →
Bottom Antireflective Coatings Through Refractive Index Modification by Anomalous Dispersion
Patent:
6,042,992 →
Application:
08/811,806 →
Use of Mixtures of Ethyl Lactate and N-Methyl Pyrollidone as an Edge Bead Remover for Photoresists
Patent:
5,814,433 →
Application:
08/833,170 →
Composition for Anti-Reflection Coating
Patent:
5,853,471 →
Application:
08/838,665 →
Antireflective Coating Compositions for Photoresist Compositions and Use Thereof
Patent:
5,994,430 →
Application:
08/841,750 →
Light Absorbing Polymers
Patent:
5,981,145 →
Application:
08/846,986 →
Radiation-Sensitive Composition and Recording Medium Using the Same
Patent:
6,110,639 →
Application:
08/860,451 →
Process for the Production of Polysilazane
Patent:
5,905,130 →
Application:
08/894,663 →
New Acid-Labile Group Protected Hydroxystyrene Polymers or Copolymers Thereof and Their Application to Radiation Sensitive Materials
Patent:
5,852,128 →
Application:
08/922,321 →
New Chemical Mechanical Polishing for Layers of Isolating Materials Based on Silicon Derivatives or Silicon
Patent:
6,043,159 →
Application:
08/941,188 →
Radiation Sensitive Composition
Patent:
5,962,187 →
Application:
08/955,453 →
Method and Composition for Forming Ceramics and Article Cated with the Ceramics
Patent:
6,083,860 →
Application:
09/005,925 →
Chemical Mechanical Polishing Process for Layers of Semiconductor or Isolating Materials
Patent:
6,126,518 →
Application:
09/054,518 →
Composition for Stripping Photoresist and Organic Materials from Substrate Surfaces
Patent:
6,368,421 →
Application:
09/113,892 →
Polyorganosiloxazanes and Process for the Preparation Thereof
Patent:
6,011,167 →
Application:
09/125,874 →
Antireflective Composition for a Deep Ultraviolet Photoresist
Patent:
6,114,085 →
Application:
09/195,057 →
Composition for Anti-Reflective Coating or Radiation Absorbing Coating and Compounds Used in the Composition
Patent:
6,803,168 →
Application:
09/237,125 →
Radiation-Sensitive Resist Composition with High Heat Resistance
Patent:
6,080,522 →
Application:
09/242,942 →
Radiation Absorbing Polymer, Composition for Radiation Absorbing Coating, Radiation Absorbing Coating and Application Thereof as Anti-Reflective Coating
Patent:
6,468,718 →
Application:
09/244,358 →
Light-Absorbing Antireflective Layers with Improved Performance Due to Refractive Index Optimization
Patent:
6,274,295 →
Application:
09/264,616 →
Novel Process for Preparing Resists
Patent:
6,284,427 →
Application:
09/308,582 →
Antireflection or Light-Absorbing Coating Composition and Polymer Therefor
Patent:
6,329,117 →
Application:
09/319,129 →
Process for Mechanical Chemical Polishing of a Layer in a Copper-Based Material
Patent:
6,302,765 →
Application:
09/365,176 →
Antireflective Coating for Photoresist Compositions
Patent:
6,187,506 →
Application:
09/368,740 →
Method for Synthesizing Polymeric Azo Dyes
Patent:
6,346,361 →
Application:
09/413,181 →
Light-Absorbing Polymers and Application Thereof to Antireflection Film
Patent:
6,255,405 →
Application:
09/424,128 →
Abrasive Composition for the Integrated Circuits Electronics Industry
Chemically Amplified Resist Composition
Aminated Polysilazane and Process for the Preparation Thereof
Patent:
6,310,168 →
Application:
09/485,174 →
Composition for Light Absorption Film Formation Containing Blocked Isocyanate Compound and Antireflection Film Formed Therefrom
Patent:
6,465,148 →
Application:
09/486,843 →
Process for Mechanical Chemical Polishing of Layer of Aluminium or Aluminium Alloy Conducting Material
Patent:
6,386,950 →
Application:
09/506,045 →
Radiation-Sensitive Composition of Chemical Amplification Type
Patent:
6,358,665 →
Application:
09/529,371 →
Composition for mechanical chemical polishing of layers in an insulating material based on a polymer with a low dielectric constant
Patent:
6,362,108 →
Application:
09/553,037 →
Negative-Acting Chemically Amplified Photoresist Composition
Patent:
6,576,394 →
Application:
09/596,098 →
Edge Bead Remover for Thick Film Photoresists
Patent:
6,524,775 →
Application:
09/693,215 →
Water-Soluble Resin Composition
Patent:
6,555,607 →
Application:
09/786,245 →
Novel Process for Preparing Resists
Negative- Acting Aqueous Photoresist Composition
Positive-Working Photoimageable Bottom Antireflective Coating
Process for Producing an Image Using a First Minimum Bottom Antireflective Coating Composition
Photosensitive Ploysilazane Composition, Method of Forming Pattern Therefrom, and Method of Burning Coating Film Thereof
Photoresist Compositions Comprising Acetals and Ketals as Solvents
Radiation Absorbing Polymer, Composition for Radiation Absorbing Coating, Radiation Absorbing Coating and Application Thereof as Anti-Reflective Coating
Blocked Isocyanate Compound-Containing Composition for Forming a Radiation Absorbing Coating and Anti-Reflective Coating Formed Therefrom
Method for Sealing Fine Groove with Siliceous Material and Substrate Having Siliceous Coating Formed Thereon
Patent:
6,767,641 →
Application:
10/258,285 →
Antireflective Compositions for Photoresists
Development Deffect Preventing Process and Material
Porous Silica Coating with Low Dielectric Constant, Semiconductor Device and Coating Composition
Photoresist Composition for Imaging Thick Films
Assembly System for Stationing Semiconductor Wafer Suitable for Processing and Process for Manufacturing Semiconductor Wafer
Silicon-Containing Copolymer and Process for Producing the Same
Method for Forming Pattern and Treating Agent for Use Therein
Photoresist Composition for Deep Ultraviolet Lithography Comprising a Mixture of Photoactive Compounds
Process for the Preparation of Aqueous Suspensions of Anionic Colloidal Silica Having a Neutral Ph and Applications Thereof
Modified Alginic Acid of Alginic Acid Derivatives and Thermosetting Anti-Reflective Compositions Thereof
Etching Method and Composition for Forming Etching Protective Layer
Solvent for Treating Polysilazane and Method of Treating Polysilazane with the Solvent
Cleaning Agent Composition for a Positive or a Negative Photoresist
Process for Chemical-Mechanical Polishing of Metal Substrates
Composition of Silicon-Containing Copolymer, Solvent-Soluble Crosslinked Silicon-Containing Copolymer, and Cured Articles Obtained Thereform
Process for Preventing Development Defect and Composition for Use in the Same
Composition for Antireflection Coating and Method for Forming Pattern
Chemically Amplified Positive Photosensitive Resin Composition
Water Soluble Resin Composition, Method of Pattern Formation and Method of Inspecting Resist Pattern
Protected Polyvinyl Alcohol Auxiliary for Forming Fine Pattern and Process for Producing the Same
Phosphorus-Containing Silazane Composition, Phosphorus-Containing Siliceous Film, Phosphorus-Containing Siliceous Filler, Method for Producing Phosphorus-Containing Siliceous Film, and Semiconductor Device
Material for Forming Fine Pattern and Method for Forming Fine Pattern Using the Same
Coating Composition and Low Dielectric Siliceous Material Produced by Using Same
Photoresist Composition for Deep Uv and Process Thereof
Photoresist Composition
Process for Making Polyesters
Photoresist Compositions
Composition for Coating Over a Photoresist Pattern
Photoresist Composition for Deep Uv and Process Thereof
Process of Imaging a Deep Ultraviolet Photoresist with a Top Coating and Materials Thereof
Nanocomposite Photoresist Composition for Imaging Thick Films
Nanocomposite Photosensitive Composition and Use Thereof
Antireflective Compositions for Photoresists
Photoresist Composition for Imaging Thick Films
Anti-Reflective Coatings
Photoactive Compounds
Photoactive Compounds
Negative Photoresist Compositions
Antireflective Composition for Photoresists
Antireflective Coating Compositions
Water Soluble Resin Composition and Method for Pattern Formation Using the Same
Antireflective Coating Compositions
Photoactive Compounds
Photoactive Compounds
Photoactive Compounds
Antireflective Coating Compositions
Stripper for Coating Layer
Solvent Mixtures for Antireflective Coating Compositions for Photoresists
Method for Fine Pattern Formation
Photoresist Coating Liquid Supplying Apparatus, and Photoresist Coating Liquid Supplying Method and Photoresist Coating Apparatus Using Such Photoresist Coating Liquid Supplying Apparatus
Antireflective Coating Composition Based on Silicon Polymer
Silicone Coating Composition
Composition for Coating Over a Photoresist Pattern Comprising a Lactam
Photoresist Compositions
Thick Film Resists
Process for the Preparation of Aqueous Suspensions of Anionic Colloidal Silica Having a Neutral Ph and Applications Thereof
Antireflective Coating Composition Comprising Fused Aromatic Rings
Bottom Antireflective Coating Compositions
Antireflective Coating Composition and Process Thereof
Antireflective Coating Composition
Antireflective Coating Composition
Antireflective Coating Compositions
Antireflective Coating Compositions
Composition for Coating Over a Photoresist Pattern
Processing Liquid for Resist Substrate and Method of Processing Resist Substrate Using the Same
Coating Composition
Method for Formation of Miniaturized Pattern and Resist Substrate Treatment Solution for Use in the Method
Hardmask Process for Forming a Reverse Tone Image Using Polysilazane
Composition for Formation of Antireflection Film and Pattern Formation Method Using the Same
Positive-Working Photoimageable Bottom Antireflective Coating
Antireflective Composition for Photoresists
Antireflective Coating Composition and Process Thereof
Antireflective Compositions and Methods of Using Same
Silicon-Containing Composition for Fine Pattern Formation and Method for Fine Pattern Formation Using the Same
Polysilazane-Containing Composition Capable of Forming a Dense Siliceous Film
Composition for Formation of Top Antireflective Film, and Pattern Formation Method Using the Composition
Antireflective Coating Composition and Process Thereof
Composition for Coating Over a Photoresist Pattern
Superfine-Patterned Mask, Method for Production Thereof, and Method Employing the Same for Forming Superfine-Pattern
Superfine Pattern Mask, Method for Production Thereof, and Method Employing the Same for forming Superfine Pattern
Underlayer Coating Composition and Processes Thereof
Resist Pattern Formating Method
Bottom Antireflective Coating Compositions and Processes Thereof
Underlayer Composition and Process Thereof
Etching Solution and Trench Isolation Structure-Formation Process Empolying the Same
Composition for Forming a Developable Bottom Antireflective Coating
Upper Surface Antireflective Film Forming Composition and Pattern Forming Method Using Same
Related Assignments
(25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Feb 17, 1995
From: PADMANABAN, MUNIRATHNA; KINOSHITA, YOSHIAKI; SUEHIRO, NATSUMI; KUDO, TAKANORI
To: HOECHST JAPAN LIMITED
Reel/Frame 007364/0973 →
Assignment of Assignor's Interest
Mar 6, 1995
From: RAHMAN, M. DALIL; AUBIN, DANIEL P.; KHANNA, DINESH N.; MCKENZIE, DOUGLAS
To: HOECHST CELANESE CORPORATION
Reel/Frame 007418/0172 →
Assignment of Assignor's Interest
Apr 12, 1995
From: MASUDA, SEIYA; PADMANABAN, MUNIRATHNA; KUDO, TAKANORI; KINOSHITA, YOSHIAKI
To: HOECHST JAPAN LIMITED
Reel/Frame 007452/0601 →
Assignment of Assignor's Interest
Aug 18, 1995
From: TASHIRO, YUJI; INOUE, KAZUO; SUZUKI, TADASHI
To: TONEN CORPORATION
Reel/Frame 007625/0486 →
Assignment of Assignor's Interest
Jan 16, 1997
From: MCCULLOCH, IAIN; DAMMEL, RALPH R.; CORSO, ANTHONY J.; DING, SHUJI
To: HOECHST CELANESE CORPORATION
Reel/Frame 008341/0716 →
Assignment of Assignor's Interest
Mar 6, 1997
From: DAMMEL, RALPH R.; NORWOOD, ROBERT A.
To: HOECHST CELANESE CORPORATION
Reel/Frame 008421/0259 →
Assignment of Assignor's Interest
Mar 7, 1997
From: SHIMIZU, YASUO; MATSUO, HIDEKI; YAMADA, KAZUHIRO
To: TONEN CORPORATION
Reel/Frame 008542/0001 →
Assignment of Assignor's Interest
Mar 24, 1997
From: WITTE, ANDREAS
To: HORST WITTE ENTWICKLUNGS- UND VERTRIEBS-KG
Reel/Frame 008498/0158 →
Assignment of Assignor's Interest
Apr 3, 1997
From: NELSON, WILLIAM C.; LEHAR, OCTAVIA
To: HOECHST CELANESE CORPORATION
Reel/Frame 008531/0502 →
Assignment of Assignor's Interest
Apr 9, 1997
From: YOSHIDA, TAKEO; TANAKA, HATSUYUKI
To: HOECHST JAPAN LIMITED
Reel/Frame 008579/0302 →
Assignment of Assignor's Interest
Jun 26, 1997
From: MASUDA, SEIYA; FUNATO, SATORU; KAWASAKI, NATSUMI
To: HOECHST JAPAN LIMITED
Reel/Frame 008633/0355 →
Assignment of Assignor's Interest
Oct 21, 1997
From: TAKEDA, TAKASHI
To: CLARIANT INTERNATIONAL LTD.
Reel/Frame 008899/0922 →
Assignment of Assignor's Interest
Nov 6, 1997
From: DING, SHUJI; KHANNA, DIMESH N.; LU, PING-HUNG; SHAN, JIANHUI
To: CLARIANT FINANCE (BVI) LIMITED
Reel/Frame 008819/0099 →
Assignment of Assignor's Interest
Nov 6, 1997
From: DING, SHUJI; LU, PING-HUNG; KHANNA, DINESH N.; SHAN, JIANHUI
To: CLARIANT FINANCE (BVI) LIMITED
Reel/Frame 008827/0567 →
Assignment of Assignor's Interest
Nov 6, 1997
From: HOECHST CELANESE CORPORATION
To: CLARIANT FINANCE (BVI) LIMITED
Reel/Frame 008829/0760 →
Assignment of Assignor's Interest
Feb 26, 1998
From: PADMANABAN, MUNIRATHNA; PAWLOWSKI, GEORG; KINOSHITA, YOSHIAKI; OKAZAKI HIROSHI
To: CLARIANT AG
Reel/Frame 009006/0236 →
Assignment of Assignor's Interest
Mar 6, 1998
From: JACQUINOT, ERIC; RIVOIRE, MAURICE
To: CLARIANT CHIMIE S.A.
Reel/Frame 009030/0918 →
Assignment of Assignor's Interest
May 7, 1998
From: CLARIANT FINANCE (BVI) LIMITED
To: CLARIANT INTERNATIONAL LIMITED
Reel/Frame 009155/0661 →
Assignment of Assignor's Interest
Jun 4, 1998
From: JACQUINOT, ERIC; RIVOIRE, MAURICE; EUVRARD, CATHERINE
To: CLARIANT (FRANCE) S.A.
Reel/Frame 009213/0856 →
Assignment of Assignor's Interest
Aug 26, 1998
From: TASHIRO, YUUJI; FUNAYAMA, OSAMU
To: TONEN CORPORATION
Reel/Frame 009830/0924 →
Assignment of Assignor's Interest
Sep 22, 1998
From: OBERLANDER, JOSEPH E.; SLEZAK, MARK S.; KHANNA, DINESH N.; DURHAM, DANA L.
To: CLARIANT INTERNATIONAL, LTD.
Reel/Frame 009484/0035 →
Assignment of Assignor's Interest
Nov 5, 1998
From: NAKAHARA, HIROHIKO; FUNAYAMA, OSAMU; ISODA, TAKESHI
To: TONEN CORPORATION
Reel/Frame 009567/0151 →
Assignment of Assignor's Interest
Nov 18, 1998
From: PADMANABAN, MUNIRATHNA; DAMMEL, RALPH R.; FICNER, STANLEY A.; OBERLANDER, JOSEPH E.
To: CLARIANT INTERNATIONAL, LTD.
Reel/Frame 009597/0871 →
Assignment of Assignor's Interest
Jan 26, 1999
From: PADMANABAN, MUNIRATHNA; KANG, WEN-BING; TANAKA, HATSUYUKI; KIMURA, KEN
To: CLARIANT INTERNATIONAL LTD.
Reel/Frame 009746/0111 →
Assignment of Assignor's Interest
Feb 4, 1999
From: KANG, WEN-BING; PADMANABAN, MUNIRATHNA; TANAKA, HATSUYUKI; KIMURA, KEN
To: CLARIANT INTERNATIONAL LTD.
Reel/Frame 009652/0672 →