Photoresist composition for imaging thick films
The present invention relates to a light-sensitive photoresist composition especially useful for imaging thick films, comprising a film-forming alkali-soluble resin, a photoactive compound, and a surfactant at a level ranging from about 2000 ppm to about 14,000 ppm by weight of total photoresist. Preferably the photoresist film has a thickness greater than 20 microns. The invention further provides for a process for coating and imaging the light-sensitive composition of this invention.
1. A coated substrate especially useful for imaging thick films, comprising a substrate with a photoresist coating film, wherein the photoresist coating film is formed from a photoresist composition comprising an alkali soluble resin, a photoactive compound, a surfactant and a solvent, where the surfactant is at a level ranging from 2000 ppm to 14,000 ppm relative to total weight of the photoresist, further wherein the thickness of the photoresist coating film is greater than 20 microns.
2. The photoresist according to the composition of claim 1 , where the surfactant is a nonionic surfactant.
3. The photoresist according to the composition of claim 1 , where the surfactant is a fluorinated and/or a silicone polymer.
4. The photoresist according to the composition of claim 1 , where the resin is selected from a novolak resin and a polyhydroxystyrene resin.
5. The photoresist according to the composition of claim 1 , where the photoactive compound is a reaction product of a 2,1,5-, or 2,1,4-diazonaphthoquinone compound and a hydroxy containing compound.
6. The photoresist according to the composition of claim 1 , where the film has a thickness less than 150 microns.
7. The photoresist according to the composition of claim 1 , where the composition further comprises a crosslinking agent.
8. A process for imaging a photoresist coating comprising the steps of:
a) forming on a substrate a photoresist coating, wherein the photoresist coating is formed from a photoresist composition comprising an alkali soluble resin, a photoactive compound, a surfactant and a solvent, where the surfactant is at a level ranging from 2000 ppm to 14,000 ppm relative to total weight of the photoresist, further where the thickness of the photoresist layer is greater than 20 microns
b) image-wise exposing the photoresist coating;
c) optionally, postexposure baking the photoresist coating; and
d) developing the photoresist coating with an aqueous alkaline solution.
9. The process according to claim 8 , where the aqueous alkaline solution comprises a base selected from tetramethylammonium hydroxide, sodium hydroxide and potassium hydroxide.
10. The process according to claim 8 , where the aqueous alkaline solution further comprises a surfactant.
11. A photoresist composition especially useful for imaging thick films, comprising an alkali soluble resin, a photoactive compound, a surfactant, a crosslinking agent and a solvent, where the surfactant is at a level ranging from 2000 ppm to 14,000 ppm relative to total weight of the photoresist.
12. The photoresist according to the composition of claim 11 , where the surfactant is a nonionic surfactant.
13. The photoresist according to the composition of claim 11 , where the surfactant is a fluorinated and/or a silicone polymer.
14. The photoresist according to the composition of claim 11 , where the resin is selected from a novolak resin and a polyhydroxystyrene resin.
15. The photoresist according to the composition of claim 11 , where the photoactive compound is a reaction product of a 2,1,5-, or 2,1,4-diazonaphthoquinone compound and a hydroxyl containing compound.
16. The photoresist according to the composition of claim 11 , where the film has a thickness greater than 20 microns.
17. The photoresist according to the composition of claim 11 , where the film has a thickness less than 150 microns.
18. A process for imaging a photoresist composition comprising the steps of:
a) forming on a substrate a photoresist coating from the photoresist composition of claim 11 ;
b) image-wise exposing the photoresist coating;
c) optionally, postexposure baking the photoresist coating; and
d) developing the photoresist coating with an aqueous alkaline solution.
19. The process according to claim 18 , where the aqueous alkaline solution comprises a base selected from tetramethylammonium hydroxide, sodium hydroxide and potassium hydroxide.
20. The process according to claim 18 , where the aqueous alkaline solution further comprises a surfactant.