Silicon-containing composition for fine pattern formation and method for fine pattern formation using the same
View Patent ↗The present invention provides a composition for forming a fine pattern with high dry etching resistance and a method for forming the fine pattern. The composition for fine pattern formation containing: a resin containing a repeating unit having a silazane bond; and a solvent as well as a method for fine pattern formation using the same.
1. A method for fine pattern formation comprising:
forming a resist pattern on a substrate by a photolithography method;
applying a composition for fine pattern formation comprising: a resin comprising a repeating unit having a silazane bond; and a solvent which can dissolve the resin and cannot dissolve the resist pattern; onto the pattern;
heating the resist pattern to form an insolubilized layer on the side of the resist pattern in proximity of the exposed areas of the resist film by reaction between the resin and the resist; and subjecting the resist pattern to a rinsing treatment with the same solvent as used to apply the resin and removing the unreacted composition, and thereby shrinking the space between the resist pattern for fine pattern formation.
2. The method for fine pattern formation according to claim 1 , wherein the heating to form an insolubilized layer is performed under conditions of 60 to 150° C. for 10 to 300 seconds.
3. The method for fine pattern formation according to claim 1 , wherein the rinsing treatment is performed with a solvent which can remove the unreacted composition.
4. A method for fine pattern formation comprising:
forming a resist pattern on a substrate by a photolithography method; applying a composition for fine pattern formation onto the pattern, wherein the composition is a resin comprising a repeating unit having a silazane bond; and a solvent which can dissolve the resin and cannot dissolve the resist pattern wherein the resin comprises two or more kinds of repeating units having a silazane bond;
heating the resist pattern to form a insolubilized layer on the side of the resist pattern in proximity of the exposed areas of the resist pattern by reaction between the resin and resist; and
subjecting the resist pattern to a rinsing treatment with the same solvent as used to apply the resin and removing the unreacted composition, and thereby shrinking space between the resist pattern for fine pattern formation.
5. The method for fine pattern formation according to claim 4 , wherein the heating to form an insolubilized layer is performed under conditions of 60 to 150° C. for 10 to 300 seconds.
6. The method for fine pattern formation according to claim 4 , wherein the rinsing treatment is performed with a solvent which can remove the unreacted composition.