Antireflective coating compositions
View Patent ↗The present invention relates to a spin-on antireflective coating composition for a photoresist comprising a polymer, a crosslinking compound and a thermal acid generator, where the polymer comprises at least one functional moiety capable of increasing the refractive index of the antireflective coating composition to a value equal or greater than 1.8 at exposure radiation used for imaging the photoresist and a functional moiety capable of absorbing exposure radiation used for imaging the photoresist. The invention further relates to a process for imaging the antireflective coating of the present invention.
1. A spin-on antireflective coating composition for a photoresist comprising a polymer, and a thermal acid generator, where the polymer comprises at least one functional moiety capable of increasing refractive index of the antireflective coating composition to a value equal or greater than 1.85 at exposure radiation used for imaging the photoresist and at least one functional moiety capable of absorbing exposure radiation used for imaging the photoresist, and further where the functional moiety capable of increasing the refractive index is —(S) n —, where n is an integer.
2. The antireflective composition of claim 1 , where the refractive index is in the range of about 1.85 to about 2.3.
3. A spin-on antireflective coating composition for a photoresist comprising a polymer, and a thermal acid generator, where the polymer comprises at least one functional moiety capable of increasing refractive index of the antireflective coating composition to a value equal or greater than 1.85 at exposure radiation used for imaging the photoresist and at least one functional moiety capable of absorbing exposure radiation used for imaging the photoresist, and further where the functional moiety capable of increasing the refractive index is selected from a halide.
4. The antireflective composition of claim 1 , where the functional moiety capable of increasing the refractive index is selected from —(S—S)—, —(S—S—S)—, and —(—S—S—S—S)—.
5. The antireflective composition of claim 1 , where the composition has an absorption extinction coefficient (k) value of about 0.1 to about 0.3.
6. The antireflective composition of claim 1 , where the functional moiety capable of absorbing exposure radiation is selected from compounds containing hydrocarbon aromatic rings, substituted and unsubstituted phenyl, substituted and unsubstituted anthracyl, substituted and unsubstituted phenanthryl, substituted and unsu batituted naphthyl, substituted and unsubstituted heterocyclic aromatic rings containing heteroatoms selected from oxygen, nitrogen, sulfur, or combinations thereof.
7. The antireflective composition of claim 1 , where the functional moiety capable of absorbing exposure radiation is selected from substituted and unsubstituted phenyl.
8. The antireflective composition of claim 1 , where the polymer further comprises a silicon moiety.
9. The antireflective composition of claim 8 , where the silicon moiety is a siloxane.
10. The antireflective composition of claim 1 , further comprising a crosslinking agent.
11. The composition of claim 10 , where the crosslinking agent is selected from melamines, methylols, glycolurils, polymeric gycolurils, hydroxy alkyl amides, epoxy and epoxy amine resins, blocked isocyanates, and divinyl monomers.
12. The composition of claim 1 , where the acid generator is selected from iodonium salts, tosylates, derivatives of benzene sulfonic acid salts, and derivatives of naphthalene sulfonic acid salts.
13. A process for forming an image comprising,
a) coating and baking a substrate with the antireflective coating composition of claim 1 ;
b) coating and baking a photoresist film on top of the antireflective coating;
c) imagewise exposing the photoresist;
d) developing an image in the photoresist;
e) optionally, baking the substrate after the exposing step.
14. The process of claim 13 , where the photoresist is imagewise exposed at wavelengths between about 13.5 nm to about 250 nm.
15. The process of claim 13 , where the imagewise exposure uses immersion lithography.
16. The process of claim 15 , where numerical aperature of lens in immersion lithography is greater than 1.2.
17. The process of claim 13 , where the photoresist comprises a polymer and a photoactive compound.
18. The antireflective composition of claim 1 , where the refractive index is in the range of about 1.9 to about 2.1.
19. The antireflective composition of claim 3 , where the functional moiety capable of absorbing exposure radiation is selected from compounds containing hydrocarbon aromatic rings, substituted and unsubstituted phenyl, substituted and unsubstituted anthracyl, substituted and unsubstituted phenanthryl, substituted and unsubstituted naphthyl, substituted and unsubstituted heterocyclic aromatic rings containing heteroatoms selected from oxygen, nitrogen, sulfur, or combinations thereof.
20. The antireflective composition of claim 3 , further comprising a crosslinking agent.
21. The composition of claim 20 , where the crosslinking agent is selected from melamines, methylols, glycolurils, polymeric gycolurils, hydroxy alkyl amides, epoxy and epoxy amine resins, blocked isocyanates, and divinyl monomers.
22. The composition of claim 3 , where the acid generator is selected from iodonium salts, tosylates, derivatives of benzene sulfonic acid salts, and derivatives of naphthalene sulfonic acid salts.