Antireflective coating compositions
View Patent ↗The present invention discloses novel bottom anti-reflective coating compositions where a coating from the composition has an etch rate that can be regulated by the etch plate temperature.
1. A composition comprising a) a polymer having a ceiling temperature in the range from about 0° C. to about 70° C.; b) a crosslinker which crosslinks with the polymer having a ceiling temperature in the range from about 0° C. to about 70° C.; and c) optionally, a cross-linking catalyst, further where the polymer comprises a chromophore and a crosslinking functionality, and further comprises repeating units
where R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are each independently selected from hydrogen, halogen, and C 1-4 alkyl which is unsubstituted or substituted; R 7 is a chromophore which absorbs at any actinic wavelength; R 10 is —(CH 2 ) j —OR 8 and R 8 is hydrogen, an acid labile group, a crosslinking site, or R 5 and R 10 together with the carbon atoms to which they are bound form a C 5-15 mono- or polycycloalkyl group which is unsubstituted or substituted; i is 0 or 1; and j is 0, 1, or 2.
2. A coating layer formed from the composition of claim 1 on a substrate, wherein said layer after crosslinking has a rate of etch rate to etch plate temperature of at least 30 Å·min −1 /° C.
3. The composition of claim 1 wherein R 7 is selected from the group of unsubstituted and substituted fluorene, vinylenephenylene, anthracene, perylene, phenyl, benzyl, chalcone, phthalimide, pamoic acid, acridine, azo compounds, dibenzofuran, any derivatives thereof thiophenes, anthracene, naphthalene, benzene, chalcone, phthalimides, pamoic acid, acridine, azo compounds, chrysenes, pyrenes, fluoranthrenes, anthrones, benzophenones, thioxanthones, heterocyclic aromatic rings containing heteroatoms selected from oxygen, nitrogen, sulfur, and combinations thereof, as well as derivatives thereof.
4. The composition of claim 1 wherein R 7 is unsubstituted or substituted phenyl.
5. The composition of claim 1 wherein for a), the polymer has a ceiling temperature in the range of from about 20° C. to about 65° C.
6. The composition of claim 1 wherein for a), the polymer is selected from
7. A method for forming a photoresist relief image comprising: applying on a substrate a layer the composition of claim 1 and crosslinking the layer to form a crosslinked layer; applying a layer of chemically-amplified photoresist composition above said crosslinked layer of composition of claim 1 .
8. The method of claim 7 wherein the photoresist composition is imaged with activating radiation and the imaged photoresist composition is treated with a developer to provide a photoresist relief image.
9. The method of claim 7 wherein the crosslinked layer has a rate of etch rate to etch plate temperature of at least 30 Å·min −1 /° C.
10. A coated substrate comprising: a substrate having thereon; a crosslinked layer of the composition of claim 1 ; a layer of a chemically-amplified photoresist composition above said crosslinked layer.
11. The coated substrate of claim 10 , wherein the crosslinked layer has a rate of etch rate to etch plate temperature of at least 30 Å·min −1 /° C.