Composition for coating over a photoresist pattern
View Patent ↗The present invention relates to an aqueous coating composition for coating a photoresist pattern, comprising a polymer comprising at least one unit with an alkylamino group, where the unit has a structure (1), where, R 1 to R 5 are independently selected from hydrogen and C 1 to C 6 alkyl, and W is C 1 to C 6 alkyl. The invention also relates to a process for imaging a photoresist layer using the present composition.
1. An aqueous coating composition for coating a photoresist pattern, comprising a polymer soluble in water and comprising at least one unit with an alkylamino group, where the unit has a structure (1),
where, R 1 to R 5 are independently selected from hydrogen and C 1 to C 6 alkyl, and W is C 1 to C 6 alkylene, further where the composition is free of carboxylic acid group.
2. The coating composition of claim 1 , where the polymer further comprises a monomeric unit of structure 2,
where, R 6 to R 8 are independently selected from hydrogen and C 1 to C 6 alkyl, A is selected from a single bond, O, C(O), (C═O)O, C 1 to C 4 alkyl;
X, Y, Z and N form a cyclic structure, further where, X is selected from C 1 to C 6 alkylene, unsaturated C 1 to C 6 alkylene, direct bond, and mixtures thereof, Y is selected from C 1 to C 6 alkylene, unsaturated C 1 to C 6 alkylene, direct bond, and mixtures thereof, Z is selected from O, C(O), and N, and N is nitrogen.
3. The coating composition of claim 2 , where the monomeric unit of structure (2)is selected from,
where, R 6 to R 8 are independently selected from hydrogen and C 1 to C 6 alkyl, X, Y, Z and N form a cyclic structure, further where, X is selected from C 1 to C 6 alkylene, unsaturated C 1 to C 6 alkylene, direct bond, and mixtures thereof, Y is selected from C 1 to C 6 alkylene, unsaturated C 1 to C 6 alkylene, direct bond, and mixtures thereof, Z is selected from O, C(O), N and N is nitrogen.
4. The coating composition of claim 2 , where the monomeric unit of structure (2) is selected from,
5. The coating composition of claim 1 , where W is ethylene.
6. The coating composition of claim 1 , where the composition is free of amido group.
7. The coating composition of claim 1 , where the polymer is free of amido group.
8. The coating composition of claim 1 , where the polymer further comprises a monomeric unit of structure (3),
where B is C 1 to C 6 alkylene, R 9 is H or C 1 to C 6 alkyl.
9. The composition of claim 1 , where the composition further contains a water miscible solvent.
10. The composition of claim 1 , where the composition further contains a water miscible solvent selected from (C 1 -C 8 )alcohols, diols, triols, ketones, esters, lactates, amides, ethylene glycol monoalkyl ethers, ethylene glycol monoalkyl ether acetate, N-methyl pyrrolidone, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether acetate, and propylene glycol monoethyl ether acetate.
11. The composition of claim 1 , where the composition further comprises additives selected from surfactant, aminoalcohol, amine, C 1 -C 8 alcohol, photoacid generator, crosslinking compound, thermal acid generator, and free acid.
12. The composition of claim 1 , where the composition is free of a crosslinking compound.
13. The composition of claim 1 , where the composition is free of a photoacid generator.
14. A process for manufacturing a microelectronic device, comprising;
a) providing a substrate with a photoresist pattern;
b) coating the photoresist pattern with an aqueous coating composition for coating a photoresist pattern, comprising a polymer comprising at least one unit with an alkylamino group, where the unit has a structure (1),
where, R 1 to R 5 are independently selected from hydrogen and C 1 to C 6 alkyl, and W is C 1 to C 6 alkylene, further where the composition is free of carboxylic acid goup;
c) reacting a portion of the coating material in contact with the photoresist pattern;
d) removing a portion of the coating material which is not reacted with a removal solution.
15. The process according to claim 14 , where the substrate is heated, thereby causing a reaction of the coating material with the photoresist.
16. The process according to claim 14 , where the removal solution is an aqueous solution comprising a hydroxide base.
17. The process according to claim 14 , where the removal solution further comprises a water-miscible solvent.
18. The process of claim 14 , where the photoresist comprises a polymer and a photoacid generator.
19. An aqueous coating composition for coating a photoresist pattern, comprising a single polymer, where the polymer comprises at least one unit with an alkylamino group of structure (1) and at least one monomeric unit selected from,
and where structure (1) is,
where, R 1 to R 5 are independently selected from hydrogen and C 1 to C 6 alkyl, and W is C 1 to C 6 alkylene, further where the composition is free of carboxylic acid group.