Composition for coating over a photoresist pattern
View Patent ↗The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing amino group. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.
1. An aqueous coating composition for coating a photoresist pattern, comprising a polymer containing a primary amine (—NH 2 ), and further where the composition is basic and free of a crosslinking compound, and furthemore where the composition causes an increase in the thickness of the photoresist pattern.
2. The compostion of claim 1 , where the amine is connected to the polymer through a (C 1 -C 10 ) alkyl group.
3. The composition of claim 1 , where the polymer is polyallylamine.
4. The composition of claim 1 , where the polymer is selected from poly(allylamine-co-methacylic acid), poly(allylamine-co-acrylic acid), poly(allylamine-co-acrylamide), poly(allylamine-co-N-alkyl acrylamide), poly(allylamine-co-acrylic acid-co-methacrylic acid), poly(allylamine-co-acrylic acid-co-acrylamide), bis(3-aminopropyl) terminated poly(oxyethylene), amine terminated poly(ethyleneoxide), and poly(propylene glycol) bis(2-aminoproplyl ether).
5. The composition of claim 1 , where the composition further contains a water miscible solvent.
6. A process for manufacturing a microelectronic device, comprising;
a) providing a substrate with a photoresist pattern;
b) coating the photoresist pattern with an aqueous coating composition for coating a photoresist pattern, comprising a polymer containing a primary amine (—NH2), and further where the composition is free of a crosslinking compound, and furthermore where the composition causes an increase in the thickness of the photoresist pattern;
c) reacting a portion of the coating material in contact with the photoresist pattern;
d) removing a portion of the coating material which is not reacted with a removal solution.
7. The process according to claim 6 , where the substrate is heated to cause a reaction of the coating material with the photoresist image.
8. The process according to claim 6 , where the removal solution is an aqueous solution comprising a hydroxide base.
9. The process according to claim 6 , where the removal solution further comprises a water-miscible solvent.
10. The process of claim 6 , where the photoresist comprises a polymer comprising a group selected from a lactone, an anhydride and an ester.
11. The compostion of claim 1 , where the polymer is a copolymer of allylamine.
12. The process of claim 6 , where the aqueous coating composition is basic.