Antireflective coating composition
View Patent ↗The present invention relates to an antireflective composition comprising a thermal acid generator and an epoxy polymer comprising at least one unit of structure 1, at least one unit of structure 2, where, R 1 to R 12 are independently selected from hydrogen and C 1 -C 4 alkyl, structure 1 has a configuration selected from cis, trans or mixture thereof, and x and y are the mole % of the monomeric units in the polymer. The invention also relates to a process for manufacturing a microelectronic device.
1. An antireflective composition comprising a thermal acid generator and an epoxy polymer comprising at least one unit of structure 1, and at least one unit of structure 2,
where, R 1 to R 12 are independently selected from a group consisting of hydrogen and C 1 -C 4 alkyl, and structure 1 has a configuration selected from a group consisting of cis, trans and mixture thereof, and x and y are the mole % of the monomeric units in the polymer, and where the composition further comprises a second absorbing polymer comprising fused aromatic unit in the backbone of the polymer and a multicyclic aliphatic unit in the backbone of the polymer.
2. The antireflective composition of claim 1 , where the second absorbing polymer has a carbon content greater than 80 weight %.
3. The antireflective composition of claim 1 , where the epoxy polymer further comprises at least one end unit selected from structures (3) and (4)
where, R 14 to R 25 is independently selected from a group consisting of hydrogen and C 1 -C 4 alkyl, and X is OH or H.
4. The antireflective composition of claim 1 , where the composition has a carbon content of greater than 75 weight %.
5. The antireflective composition of claim 1 , where the epoxy polymer has the structural units (3) and (4),
where, structure 4 has cis or trans configuration, and x and y are the mole % of the monomeric units in the polymer.
6. The antireflective composition of claim 1 , where the epoxy polymer is
where x and y are the mole % of the monomeric units in the polymer.
7. The antireflective composition of claim 1 , where the epoxy polymer has a carbon content of greater than 75 weight %.
8. The antireflective composition of claim 1 , where the epoxy polymer has a refractive index in the range of about 1.7 about 1.8 at 193 nm.
9. The antireflective composition of claim 1 , where the epoxy polymer has a absorbance in the range from about 0.15 to about 0.35 at 193 nm.
10. The antireflective composition of claim 1 , where the second polymer further comprises a unit selected from a group consisting of hydroxyphenylene, hydroxynaphthlene and mixtures thereof.
11. The antireflective composition of claim 1 , further comprising a crosslinker.
12. The antireflective composition of claim 11 , where the crosslinker is selected from a group consisting of melamines, methylols, glycolurils, polymeric gycolurils, hydroxy alkyl amides, epoxy resins, epoxy amine resins, blocked isocyanates, and divinyl monomers.
13. The antireflective composition of claim 1 , where the thermal acid generator is selected from a group consisting of iodonium salts, tosylates, derivatives of benzene sulfonic acid salts, and derivatives of naphthalene sulfonic acid salts.
14. A process for manufacturing a microelectronic device, comprising;
a) providing a substrate with a first layer of an antireflective coating composition from claim 1 ;
b) optionally, providing at least a second antireflective coating layer over the first antireflective coating composition layer;
c) coating a photoresist layer above the antireflective coating layers;
d) imagewise exposing the photoresist layer with radiation;
e) developing the photoresist layer with an aqueous alkaline developing solution.
15. The process of claim 14 , where the second antireflective coating comprises silicon.
16. The process of claim 14 , where the photoresist layer is imageable with radiation from about 240 nm to about 12 nm.
17. A process for manufacturing a microelectronic device, comprising;
a) providing a substrate with a first layer of an antireflective coating composition from claim 1 ;
b) optionally, providing at least a second antireflective coating layer over the first antireflective coating composition layer;
c) coating a photoresist layer above the antireflective coating layers; and,
d) imaging the photoresist by nanoimprinting.
18. An antireflective composition comprising a thermal acid generator and an epoxy polymer comprising at least one unit of structure 1, and at least one unit of structure 2,
where, R 1 to R 12 are independently selected from a group consisting of hydrogen and C 1 -C 4 alkyl, and structure 1 has a configuration selected from a group consisting of cis, trans and mixture thereof, and x and y are the mole % of the monomeric units in the polymer, and where the composition further a second polymer which comprises a fused aromatic unit in the backbone of the polymer where the fused aromatic unit has in the range of about 3 to about 8 aromatic rings.