Composition for formation of antireflection film and pattern formation method using the same
View Patent ↗The present invention provides a composition for forming a top anti-reflection coating having such a low refractive index that it can be suitably used in pattern formation with an ArF excimer laser beam, and further the invention also provides a pattern formation method employing that composition. The top anti-reflection coating composition comprises a particular naphthalene compound, a polymer, and a solvent. The composition is used for forming a top anti-reflection coating provided on a photoresist layer. From the photoresist layer, a pattern can be formed by use of light in 160 to 260 nm.
1. A top anti-reflection coating composition for forming a top anti-reflection coating provided on a photoresist layer from which a pattern is formed by use of light, comprising a naphthalene compound, an aqueous soluble fluorinated polymer, and a solvent, further where the naphthalene compound is represented by the following formula (I):
wherein each of R 1 to R 8 is independently one selected from the group consisting of:
—H
—(CH 2 ) n1 OH,
—(CH 2 ) n2 COOH,
—(CH 2 ) n2 NH 2 ,
—(CH 2 ) n2 COONH 2 ,
—(CH 2 ) n2 SO 3 H, and
—(CH 2 ) n2 SO 2 NH 2 ,
where n1 is an integer of 1 to 4, and n2 is an integer of 0 to 4, and further where the wavelength of light is 193 nm.
2. The top anti-reflection coating composition according to claim 1 , wherein said solvent is water or an organic solvent.
3. The top anti-reflection coating composition according to claim 2 , wherein said solvent is a mixed solvent comprising not less than 60 wt. % but less than 99.9 wt. % of a hydrocarbon containing 5 to 20 carbon atoms and not less than 0.1 wt. % but less than 40 wt % of an alcohol containing 1 to 20 carbon atoms.
4. A pattern formation method comprising:
applying a resist composition onto a substrate to form a resist layer,
coating the resist layer with an anti-reflection coating composition of claim 1 ; and then drying the composition,
imagewise exposing the resist layer to light of 193 nm, and
developing the exposed resist layer.
5. An article comprising a top anti-reflection coating of claim 1 provided on a photoresist layer.
6. The top anti-reflection coating according to claim 5 , wherein the extinction coefficient at 193 nm is more than 0 but not more than 0.5.
7. The top anti-reflection coating composition according to claim 1 , wherein said naphthalene compound is selected from a group consisting of 5-naphthylsulfonic acid, 1-naphthylacetic acid, 1-naphthylacetic amide, 1-naphthylmethanol and 2-(1-naphthyl)ethanol.