Material for forming fine pattern and method for forming fine pattern using the same
View Patent ↗In the method wherein a resist pattern is miniaturized effectively by applying a fine pattern forming material, the fine pattern forming material used for providing with a cured coated layer pattern, wherein development defects are reduced by water development is offered, wherein the fine pattern forming material comprises a water-soluble resin, a water-soluble crosslinking agent and water or a mixed solution consisting of water and a water-soluble organic solvent, and further comprises an amine compound.
1. A fine pattern forming material comprising a water-soluble resin, a water-soluble crosslinking agent, a solvent consisting of water or a mixed solvent of water and a water-soluble organic solvent, and an amine compound which is at least one selected from the group of a polyallylamine derivative, and that pH value of the fine pattern forming material exceeds 7.0, further where the amino group of the polyallylamine is partially protected at least by one selected from the group of an alkyloxycarbonyl group, an aryloxycarbonyl group and an alkylcarbonyl group.
2. The fine pattern forming material according to claim 1 wherein the water-soluble resin is at least one selected from a group of a polyvinylaicohol derivative, a polyvinylpyrrolidone derivative and a polyacrylic acid derivative.
3. The fine pattern forming material according to claim 1 , wherein the above amine compound is a polyallylamine derivative having the molecular weight of 1,000 to 10,000.
4. The fine pattern forming material according to claim 1 further comprising a surfactant selected from an anionic surfactant and a nonionic surfactant and laurylpyridinium chloride.
5. The fine pattern forming materiel according to claim 4 , wherein the above surfactant is at least one selected from the group of an anionic surfactant selected from a group of alkylsulfonate, alkylbenzene sulfonic acid and alkylbenzenesulfonate, and a nonionic surfactant selected from a group of polyoxyethylene octylether, polyoxyethylene laurylether and polyoxyethylene acetylenic glycolether.
6. A fine pattern forming method comprising a step of forming a resist pattern made of a photoresist on a substrate, a step wherein a coating layer is formed by applying the fine pattern forming material of claim 1 over the resist pattern, a step wherein the area neighboring to the resist pattern is crosslinked and/or cured by heating the resist pattern and the coated layer by a diffusion of an acid from the resist pattern, and a step wherein the coated layer is developed by water or a mixture of water and a water-soluble organic solvent after heating.
7. The tine pattern forming material according to claim 1 where water-soluble crosslinking agent is at least one selected from the group consisting of a melamine derivative and a urea derivative.
8. The fine pattern forming material according to claim 1 where organic solvent is at least one selected from a group of alcohols, ketones, esters, ethylene glycol monoalkylethers, ethylene glycol monoalkylether acetates, propylene glycol monoalkylethers, propylene glycol monoalkylether acetates, lactic esters, aromatic hydrocarbons, amides, lactones, aprotic polar solvents.
9. The fine pattern forming material according to claim 1 , further comprising a plasticizer.
10. The fine pattern forming material according to claim 4 , further comprising a plasticizer.
11. The method of claim 6 , where the curing temperature is in the range of about 90° C. to about 130° C.
12. The fine pattern forming material according to claim 4 , wherein the above surfactant is laurylpyridinium chloride.