Granted Patent
Utility
US 6,567,319
· Confirmation No. 1966
NONVOLATILE SEMICONDUCTOR MEMORY WITH CONTROLLED SUPPLY OF BOOSTED VOLTAGE
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⬇ PDF
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2002-06-17 | TRNA |
Transmittal of New Application | 4 | View | |
| 2002-06-17 | A.PE |
Preliminary Amendment | 3 | View | |
| 2002-06-17 | SPEC |
Specification | 46 | View | |
| 2002-06-17 | CLM |
Claims | 8 | View | |
| 2002-06-17 | ABST |
Abstract | 1 | View | |
| 2002-06-17 | DRW |
Drawings-only black and white line drawings | 10 | View | |
| 2002-06-17 | OATH |
Oath or Declaration filed | 4 | View |
Inventors
Hiroshi Sato
Iruma, JAPAN
Satoshi Noda
Ome, JAPAN
Kiichi Manita
Kawagoe, JAPAN
Shoji Kubono
Ome, JAPAN
Koji Shigematsu
Fussa, JAPAN
Attorneys & Agents of Record
Classification
USPC
365/189.09
G11C5/145
G11C16/12
G11C16/30
Prosecution
- Examiner
- LAM, DAVID
- Art Unit
- 2818
- Docket No.
- XA-9500A
- Confirmation No.
- 1966
Foreign Priority
2000-211716
·
2000-07-12
·
JAPAN
Publication
- Pub. No.
- US20020149974A1
- Pub. Date
- 2002-10-17
Patent Term Adjustment
0days
CHANGE OF ADDRESS
Recorded 2017-11-29
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2014-05-09
from
HITACHI, LTD.
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2011-03-25
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Quick Facts
- Patent No.
- US 6,567,319
- App. No.
- 10/171,768
- Filed
- 2002-06-17
- Granted
- 2003-05-20
- Pub. No.
- US20020149974A1
- Examiner
- LAM, DAVID
- Art Unit
- 2818
- PTA
- 0 days
External Links