Transistor with means for providing a non-silicon-based emitter

1. A transistor, comprising:

a base;

a collector;

an emitter comprising a group III/VI semiconductor; and

an emitter contact coupled to the emitter.

2. The transistor of claim 1 , wherein:

the base comprises a p-type semiconductor material; and

the collector comprises an n-type semiconductor material.

3. The transistor of claim 1 , wherein:

the group III/VI semiconductor is doped to behave as a p-type semiconductor;

the base comprises an n-type semiconductor; and

the collector comprises a p-type semiconductor.

4. The transistor of claim 1 , wherein the collector comprises a buried collector.

5. The transistor of claim 1 , wherein the emitter further comprises an n-type dopant.

6. A microcircuit, comprising:

at least one metal oxide semiconductor (MOS) transistor; and

the transistor of claim 1 .

7. A transistor, comprising:

a base;

a collector; and

an emitter comprising a group III/VI semiconductor, wherein the group III/VI semiconductor is selected from the group consisting of GaS, GaSe, GaTe, InS, InSe, InTe, and TIS.

8. A transistor, comprising:

a base made of a silicon material;

a collector; and

means for providing a non-silicon-based emitter with a flexible structure to relieve lattice mis-match between the emitter and the base, the emitter comprising a group III/VI semiconductor.

9. A transistor, comprising:

a base constructed of a p-type silicon material;

a base contact coupled to the base;

an emitter constructed of a group III/VI semiconductor, including InSe, comprising an n-type semiconductor;

an emitter contact coupled to the emitter;

an n-type semiconductor layer coupled to the base;

a collector contact; and

a buried collector constructed from an enhanced n-type semiconductor layer, coupled to the collector contact and the n-type semiconductor layer.