Three dimensional radiation detector
A pixelated detector assembly comprising a stack of thin detector crystals, each detector crystal having a pair of planar surfaces bound by edges substantially thinner than the dimensions of the surfaces. The stack is disposed such that the radiation to be detected is incident on one set of edges of the stack of detector crystals. The dimension of the planar surfaces in the general direction of incidence of the radiation incidence is sufficient to ensure that substantially all of the high energy photons to be detected are absorbed within the depth of the detector assembly. Each of the detector crystals has a two-dimensional pixelated anode array formed on one of its planar surfaces. A cathode is formed on its opposite planar surface, preferably covering substantially all of the surface. The position of interaction of a photon in the plane perpendicular to the direction of the incident radiation, is determined by which of the detector crystals in the stack detects the absorption, and by which of the rows of pixelated anodes in that crystal detects the absorption. The depth of interaction of a photon is determined by the location of the particular anode pixel in the above-mentioned row of pixelated anodes where the photon absorption is detected. The detector assembly is thus able to detect the point of interaction of a photon in all three dimensions.
1. A three-dimensional radiation dectecter assembly comprising:
a plurality of thin semiconductor crystal dectector parallax error reduction modules, each of said parallax error reduction modules including first and second oppositely facing planar surfaces and at least one photon receiving edge surface between said planar surfaces,
said first planar surface having formed thereon a single monolithic cathode,
said second planar surface having formed thereon a two-dimensional array of pixelated anodes, outputs of said two-dimensional array of pixelated anodes containing information useful for determining depth of interaction of photons received at said at least one photon receiving edge surface, the depth of interaction being indicated by a location of an anode sensing photon absorption,
said plurality of thin semiconductor crystal dectecter parallax error reduction modules being arranged in a stack such that photon receiving edge surfaces therefore together defined a photon receiving surface extending in two dimensions, and together providing photon impingement location information in said two dimensions, and said depth of interaction indicating information providing photon travel information, indicating photon travel having a component in a third dimension, perpendicular to said two dimension, for parallax error reduction.
2. A three-dimensional radiation detector according to claim 1 , where the dimensions of said planar surfaces are sufficiently large that said dectecter absorbs substantially all high energy photons incident on it, produced by position-electron annihilation phenomena.
3. A three-dimensional radiation detector according to claim 1 , and array comprises rows and columns of pixels, and wherein said detector detects the depth of interaction of a photon in said assembly according to the column of said pixels that detects said photon.
4. A three-dimensional radiation detector according to claim 1 , wherein said detector detects the point of a photon in said assembly in three dimensions.
5. A three-dimensional radiation detector according to claim 1 , and also comprising a printed circuit board (PCB) disposed between two adjacent ones of said parallax error reduction modules in said stack, said circuit board being in electrical contact with said pixelated anodes and said cathode of said parallax error reduction modules on either side thereof.
6. A gamma ray camera comprising at least two detectors according to claim 1 , wherein said camera is operative to determined the source of detected photons substantially without parallax errors.
7. A gamma ray camera comprising at least two detectors according to claim 1 , and also operative to determine the path of a photon which has undergone multiple scattering in at least one of said detectors.
8. A three-dimensional radiation detector according to claim 1 , and also comprising a printed circuit board (PCB) disposed between two adjacent ones of said parallax error reduction modules in said stack, said PCB being formed of a flexible and isolating polymer.
9. A three-dimensional radiation detector according to claim 8 and wherein conductive leads are formed on said PCB.
10. A method for detecting radiation comprising:
providing a three-dimensional radiation detector including a plurality of thin semiconductor crystal dectecter parallax error reduction modules, each of said parallax error reduction modules including first and second oppositely facing planar surfaces and at least one photon receiving edge surface between said planar surfaces.
said first planar surface having formed thereon a single monolithic cathode and said second planar surface having formed thereon a two-dimensional array of pixelated anodes, outputs of said two-dimensional array of pixelated anodes containing information useful for determining depth of interaction of photons received at said at least one photon receiving edge surface, the depth of interaction being indicated by a location of an anode sensing photon absorption,
said plurality of thin semiconductor crystal detector parallax error reduction modules being arranged in a stack such that photon receiving edge surfaces thereof together define a photon receiving surface extending in two dimensions, and together providing photon impingement location information in said two dimensions, and said depth of interaction indicating information providing photon travel information indicating photon travel having a component in a third dimension, perpendicular to said two dimensions;
disposing said detector to receive radiation impinging thereon at said photon receiving surface;
determining a depth of a photon of a photon of said radiation; and
employing said depth of interaction to eliminate parallax error.
11. A parallax corrected imaging method providing impingement location and depth of interaction information for an imagewise flux of incoming photons, the method comprising:
directing an imagewise flux of incoming photons at a two dimensional photon receiving surface defined by elongate edge surfaces of a stack of thin semiconductor crystal detector depth of interaction indicating modules, each of said detector modules including first and second oppositely facing planar surfaces and at least one photon receiving edge surface between said planar surfaces, said first planar surface having formed thereon a single monolithic cathode and said second planar surface having formed thereon a two-dimensional array of pixelated anodes;
employing electrical signals from of said two-dimensional arrays of pixelated anodes to indicate depth of interaction of photons received at said two dimensional photon receiving edge surface and to provide photon impingement location information, the depth of interaction being indicated by the location of an anode sensing photon absorption; and
employing said depth of interaction to eliminate parallax error.