Method and apparatus for increasing signal to noise ratio in a photoacoustic film thickness measurement system
View Patent ↗An apparatus for improving the signal to noise ratio of measurements of the thickness of layers in a thin film stack uses a photoacoustic measurement system that includes a time differentiation system for inducing a delay in pump beam pulses. The time differentiation system uses, among other things, a birefringent element and other elements to control the polarization of pump beam pulses. Use of the apparatus involves applying a time varying voltage to an electro-optic modulator driver and setting a time differentiation step; or, in another embodiment, applying a time varying voltage to an electro-optic modulator to induce a fixed time delay delta-t between a vertically polarized pulse and a horizontally polarized pulse. The high frequency operation of the system provides for improved determinations of film thickness.
1. A photoacoustic measurement system for measuring the thickness of at least one film layer in a sample comprising:
a time differentiation system comprising an electro-optic modulator and two optical paths of different optical lengths to induce a time delay between a first pump beam pulse traversing a first optical path and a probe beam, and a second time delay between a second pump beam pulse traversing a second optical path and a probe beam; wherein, the pump beam pulses are directed to a measurement site of the sample to obtain a signal representing the thickness of at least one film layer at the measurement site.
2. A photoacoustic measurement system according to claim 1 , wherein the time differentiation system further comprises a half wave plate.
3. A photoacoustic measurement system according to claim 1 , wherein the time differentiation system further comprises a mirror.
4. A photoacoustic measurement system according to claim 1 , wherein the time differentiation system further comprises a polarizer.
5. A photoacoustic measurement system according to claim 1 , wherein the time differentiation system further comprises a retroreflector.
6. A photoacoustic measurement system according to claim 1 , wherein the frequency of the pump beam time differentiation ranges from about one kHz up to about one GHz.
7. A photoacoustic measurement system for measuring the thickness of at least one film layer in a sample comprising:
a time differentiation system comprising a birefringent element in optical series with an electro-optic modulator, and a time-variable voltage source coupled to the electro-optic modulator, to induce a time delay delta-t between differently polarized pump beam pulses; wherein, the pump beam pulses form a time-differentiate beam that is directed to a measurement site of the sample to obtain a signal representing the thickness of the at least one film layer at the measurement site.
8. A photoacoustic measurement system according to claim 7 , wherein the electro-optic modulator functions as a half wave plate.
9. A photoacoustic measurement system according to claim 7 , wherein the time differentiation system further comprises a mirror.
10. A photoacoustic measurement system according to claim 7 , wherein the time differentiation system further comprises a polarizer.
11. A photoacoustic measurement system according to claim 7 , wherein the time differentiation system further comprises a retroreflector.
12. A photoacoustic measurement system according to claim 7 , wherein the frequency of the pump beam time differentiation ranges from about one kHz up to about one GHz.
13. A method for determining the thickness of at least one film layer contained within a stacked film layer using a photoacoustic measurement system, the method comprising:
aligning a beam spot with a measurement site on the stacked film layer;
applying a time-varying voltage to an electro-optic modulator to generate a time differentiated measurement beam, said time differentiated measurement beam comprising a first pump beam traversing a first optical path and a second pump beam traversing a second optical path of optical length different from the first;
making a measurement at the measurement site using the first and second beams;
recording measurement data; and,
analyzing the measurement data to determine the thickness of the at least one film layer at the measurement site.
14. The method according to claim 13 , wherein analyzing comprises:
setting a time differentiation step to be sensitive to frequency selective signal features arising from the presence of a thin film layer contained within the stacked film layer to obtain differentiated data;
analyzing the differentiated data to obtain the thickness of the thin film layer; and,
holding the thickness of the thin layer constant while analyzing non-differentiated data to determine the thickness of a thick film layer contained within the stacked film layer.
15. The method according to claim 13 , wherein the stacked film layer comprises a semiconductor.
16. A method for determining the thickness of at least one film layer contained within a stacked film layer using a photoacoustic measurement system, the method comprising:
aligning a beam spot with a measurement site on the stacked film layer;
applying a time-varying voltage to an electro-optic modulator to induce a time delay delta-t between a vertically polarized pump beam pulse and a horizontally polarized pump beam pulse thus forming a time differentiated beam;
making a measurement at the measurement site with the time differentiated beam;
recording measurement data; and,
analyzing the measurement data to determine the thickness of the at least one film layer at the measurement site.
17. The method according to claim 16 , wherein the analyzing comprises:
setting the time delay to be optimally sensitive to the frequency selective signal features arising from the presence of a thin film layer contained within the stacked film layer to obtain differentiated data;
analyzing the differentiated data to obtain the thickness of a thin film layer contained within the stacked film layer; and,
holding the thin layer thickness constant while analyzing non-differentiated data to determine the thickness of a thick film contained within the stacked film layer.
18. The method according to claim 16 , wherein the stacked film layer comprises a semiconductor.