Semiconductor integrated circuit device
View Patent ↗A semiconductor integrated circuit device has a semiconductor substrate, an interlayer insulating film including SiOF films formed on a main surface of the semiconductor substrate, a wiring groove formed by dry etching of the interlayer insulating film, and a Cu wiring buried in the wiring groove by a Damascene method, wherein a silicon oxynitride film is provided between a silicon nitride film serving as an etching stopper layer for the dry etching and the SiOF film, so that free F generated in the SiOF film is trapped with the silicon oxynitride film.
1. A semiconductor integrated circuit device comprising:
a first insulating film formed over a main surface of a semiconductor substrate and comprised of fluorine-containing silicon oxide;
a second insulating film formed over said first insulating film and including silicon and oxide as a component;
a third insulating film formed over said second insulating film and including silicon and carbon as a component; and
a fourth insulating film formed over said third insulating film and comprised of fluorine-containing silicon oxide,
wherein said fourth insulating film includes a first trench and wherein a first wiring is formed inside said first trench.
2. A semiconductor integrated circuit device according to claim 1 , wherein said first trench is formed to extend in said third insulating film,
wherein said first wiring is comprised of a conductive layer containing copper as a main component and a barrier metal film formed between said conductive layer and said third and said fourth insulating film.
3. A semiconductor integrated circuit device according to claim 2 , wherein said first insulating film includes a second trench and wherein a first plug is formed inside said second trench,
wherein said second trench is integrally formed with said first trench.
4. A semiconductor integrated circuit device according to claim 2 , wherein said third insulating film is comprised of SiCN.
5. A semiconductor integrated circuit device according to claim 2 , wherein said third insulating film is comprised of SiC.
6. A semiconductor integrated circuit device according to claim 1 , wherein said third insulating film is comprised of SiCN.
7. A semiconductor integrated circuit device according to claim 6 , wherein said second insulating film is comprised of SiON.
8. A semiconductor integrated circuit device according to claim 1 , wherein said third insulating film is comprised of SiC.
9. A semiconductor integrated circuit device according to claim 8 , wherein said second insulating film is comprised of SiON.