IP Library Assignment 014569/0585
Patent Assignment
Reel/Frame 014569/0585

Assignment of Assignor's Interest

Recorded: 2003-09-26 Received: 2003-10-07 Pages: 10
Assignor
HITACHI, LTD.
Executed: 2003-09-12
Assignee
RENESAS TECHNOLOGY CORPORATION
4-1, MARUNOUCHI 2-CHOME, CHIYODA-KY, TOKYO, JPX, JAPAN
Covered Properties (100)
Process for Treating Solid Surface and Substrate Surface
Application: 10/460,260 →
Method of Manufacturing a Dual Gate Semiconductor Device with a Poly-Metal Electrode
Application: 10/448,351 →
Packet Communication Apparatus
Application: 10/446,929 →
Semiconductor Device
Application: 10/437,900 →
Printed Wiring Board and Electronic Device Using the Same
Application: 10/437,901 →
Storage Device Counting Error Correction
Application: 10/430,345 →
Manufacturing Method of Semiconductor Device
Application: 10/417,225 →
Nonvolatile Semiconductor Memory Devices and the Fabrication Process of Them
Application: 10/417,269 →
Semiconductor Device, and the Method of Testing or Making of the Semiconductor Device
Application: 10/413,135 →
Storage Device Employing a Flash Memory
Application: 10/409,080 →
Method of Manufacturing a Semiconductor Device Having Trenches for Isolation and Capacitor Formation Trenches
Application: 10/408,353 →
Semiconductor Device Having Redundancy Circuit
Application: 10/401,975 →
Semiconductor Integrated Circuit Device and a Method of Manufacturing the Same
Application: 10/400,469 →
Semiconductor Device Having a Capacitor and a Metal Interconnect Layer with Tungsten as a Main Constituent Material and Containing Molybdenum
Application: 10/395,248 →
Semiconductor Device and Method of Manufacturing the Same
Application: 10/390,413 →
Semiconductor Storage Device in Which Commands Are Sequentially Fed to a Plurality of Flash Memories to Continously Write Data
Application: 10/387,478 →
Nonvolatile Semiconductor Storage Device and Method for Operating the Device
Application: 10/386,660 →
Semiconductor Integrated Circuit Device, Memory Module, Storage Device and the Method for Repairing Semiconductor Integrated Circuit Device
Application: 10/379,545 →
Semiconductor Integrated Circuit and Method for Manufacturing the Same
Application: 10/379,543 →
Semiconductor Memory Device
Application: 10/377,717 →
Method of Manufacturing Semiconductor Device
Application: 10/376,694 →
Nonvolatile Memory Device and Refreshing Method
Application: 10/373,737 →
Nonvolatile Memory Device and Refreshing Method
Application: 10/373,709 →
Semiconductor Memory Device Having Faulty Cells
Application: 10/373,872 →
Clock Synchronized Non-Volatile Memory Device
Application: 10/373,751 →
Nonvolatile Memory Device and Refreshing Method
Application: 10/373,712 →
Non-Volatile Semiconductor Memory and Method of Making Same, and Semiconductor Device and Method of Making Device
Application: 10/374,433 →
clock synchronized non-volatile memory device
Application: 10/373,707 →
Display Device and Driving Circuit for Displaying
Application: 10/372,437 →
Process for Manufacturing Semiconductor Integrated Circuit Device
Application: 10/369,716 →
Method of Manufacturing Integrated Circuit
Application: 10/364,707 →
Method of Manufacturing Integrated Circuit
Application: 10/364,706 →
Method of Manufacturing Integrated Circuit
Application: 10/364,702 →
Mask for Manufacturing Semiconductor Device and Method of Manufacture Thereof
Application: 10/361,699 →
Semiconductor Integrated Circuit Device and Method of Manufacturing the Same
Application: 10/358,276 →
Method for Manufacturing Semiconductor Integrated Circuit Device
Application: 10/355,302 →
Semiconductor Device and Method of Manufacturing the Same
Application: 10/355,116 →
Nonvolatile Semiconductor Memory
Application: 10/351,524 →
A semiconductor integrated circuit device
Application: 10/345,958 →
Information Processing Apparatus Having a Bus Using the Protocol of the Acknowledge Type in the Source Clock Synchronous System
Application: 10/337,729 →
Semiconductor Integrated Circuit Device and Manufacturing Method of That
Application: 10/331,874 →
Fabrication method of semiconductor integrated circuit device
Application: 10/331,663 →
Semiconductor Device Provided with Rewiring Layer
Application: 09/787,526 →
A Semiconductor Device Including Active Regions and Gate Electrodes for Field Effect Transistors, with a Trench Formed Between the Active Regions
Application: 10/330,196 →
Semiconductor integrated circuit device and a method of manufacturing the same
Application: 10/329,441 →
Method of Manufacturing a Semiconductor Device Having an Interconnect Embedded in an Insulating Film
Application: 10/329,831 →
Method of Manufacturing a Semiconductor Integrated Circuit Device Including a Hole Formed in an Insulating Film and a First Conductive Film Formed Over a Bottom Region and Sidewalls of the Hole
Application: 10/327,024 →
Method of Manufacturing Semiconductor Apparatus
Application: 10/326,663 →
Semiconductor Device
Application: 10/322,672 →
Semiconductor Device and Manufacturing Method Thereof
Application: 10/321,501 →
Method of Manufacturing Integrated Circuit
Application: 10/311,456 →
Semiconductor Memory Apparatus, Semiconductor Apparatus, Data Processing Apparatus and Computer System
Application: 10/320,516 →
Fabrication method for semiconductor integrated circuit device
Application: 10/319,580 →
Semiconductor Device and the Method of Manufacturing Thereof
Application: 10/318,244 →
Semiconductor-Device Inspecting Apparatus and a Method for Manufacturing the Same
Application: 10/316,828 →
Plasma Processing Method
Application: 10/315,054 →
Radio Transmitting/Receiving Device
Application: 10/297,800 →
Semiconductor Memory Having Electrically Erasable and Programmable Semiconductor Memory Cells a Semiconductor Memory Having Elelctrically Programmable Semiconductor Memory Cells
Application: 10/304,046 →
Semiconductor Module and Mounting Method for Same
Application: 10/302,986 →
Semiconductor Device and Manufacturing Method
Application: 10/301,624 →
Power Amplifier Module
Application: 10/239,157 →
Photo Mask
Application: 10/299,692 →
Semiconductor Device Including Impurity Layer Having a Plurality of Impurity Peaks Formed Beneath the Channel Region
Application: 10/298,597 →
Method of Manufacturing a Semiconductor Device and a Semiconductor Device
Application: 10/298,585 →
Semiconductor Integrated Circuit Device and Method of Manufacturing the Same
Application: 10/295,908 →
Diode Package Having an Anode and a Cathode Formed on One Surface of a Diode Chip
Application: 10/294,619 →
Semiconductor Device
Application: 10/294,937 →
Semiconductor Integrated Circuit Device and Method of Manufacturing the Same
Application: 10/294,712 →
Radiation-Sensitive Composition and Method for Forming Patterns and Fabricating Semiconductor Devices
Application: 10/294,618 →
Memory System Performing Fast Access to a Memory Location by Omitting the Transfer of a Redundant Address
Application: 10/290,367 →
Semiconductor Device with Improved Latch Arrangement
Application: 10/290,492 →
Method for Manufacturing Semiconductor Integrated Circuit Device
Application: 10/288,539 →
Data Processing Apparatus Having Dram Incorporated Therein
Application: 10/284,153 →
Semiconductor Integrated Circuit Device
Application: 10/282,080 →
Method for Manufacturing Semiconductor Integrated Circuit Device
Application: 10/281,189 →
Data Processor
Application: 10/281,148 →
Method for Manufacturing Semiconductor Integrated Circuit Device
Application: 10/280,019 →
Method of Manufacturing a Dual Gate Semiconductor Device with a Poly-Metal Electrode
Application: 10/272,369 →
Semiconductor Device Having Projected Electrodes and Structure for Mounting the Same
Application: 10/271,572 →
Method of Manufacturing Semiconductor Integrated Circuit Device Having Capacitor Element
Application: 10/270,193 →
Method of Producing Electronic Part with Bumps and Method of Producing Electronic Part
Application: 10/267,869 →
Semiconductor Device Having Solder Bumps Reliably Reflow Solderable
Application: 10/265,660 →
Method of Manufacturing Semiconductor Device Having Conductive Thin Films
Application: 10/265,105 →
Semiconductor Integrated Circuit Device with a Connective Portion for Multilevel Interconnection
Application: 10/263,829 →
Semiconductor Device and Contactor for Inspection
Application: 10/260,348 →
Fabrication Method of Semiconductor Integrated Circuit Device and Mask
Application: 10/259,397 →
Wireless Communication Receiver
Application: 10/253,648 →
Radio frequency module
Application: 10/252,512 →
Semiconductor device, its fabrication method and electronic device
Application: 10/252,545 →
Semiconductor Device with Improved Arrangements to Avoid Breadkage of Tungsten Interconnector
Application: 10/252,534 →
Packaging Device for Holding a Plurality of Semiconductor Devices to Be Inspected
Application: 10/252,546 →
A Semiconductor Integrated Circuit Device
Application: 10/252,101 →
Method of Manufacturing a Semiconductor Integrated Circuit Device Including a Gate Electrode Having a Salicide Layer Thereon
Application: 10/251,849 →
Semiconductor Device Having Thin Electrode Laye Adjacent Gate Insulator and Method of Manufacture
Application: 10/251,753 →
Semiconductor Integrated Circuit Device
Application: 10/238,716 →
Semiconductor package and flip chip bonding method therein
Application: 10/233,558 →
Semiconductor Device
Application: 10/230,314 →
Ferroelectric capacitor and semiconductor device
Application: 10/229,075 →
Nonvolatile Memory Device and Refreshing Method
Application: 10/223,347 →
Clock Synchronized Non-Volatile Memory Device
Application: 10/223,361 →