Clock synchronized non-volatile memory device

1. A nonvolatile memory apparatus comprising:

a control circuit;

a plurality of terminals including a clock terminal, a command terminal and an other terminal;

a converter circuit; and

a plurality of nonvolatile memory cells,

wherein said clock terminal receives a clock signal,

wherein said command terminal receives commands which comprise a read command and a program command,

wherein said control circuit reads out operation steps from a program memory for controlling an operation of said received command by executing said operation steps,

wherein in an operation in response to said read command received from said command terminal, said control circuit controls, based on operation steps corresponding to said read command, reading data in parallel from ones of said nonvolatile memory cells, converting parallel type data to serial type data by said converter circuit, and serially outputting data via said other terminal except said command terminal in response to said clock signal, and

wherein in an operation in response to said program command received from said command terminal, said control circuit controls, based on operation steps corresponding to said program command, serially receiving data via said other terminal except said command terminal in response to said clock signal, converting serial type data to parallel type data by said converter circuit, and writing data in parallel to ones of said nonvolatile memory cells.

2. A nonvolatile memory apparatus according to claim 1 , wherein said commands further comprise:

an erase command,

wherein in an operation in response to said erase command received from said command terminal, said control circuit controls, based on operation steps corresponding to said erase command, erasing data stored in ones of said nonvolatile memory cells.

3. A nonvolatile memory apparatus according to claim 2 , wherein each of said nonvolatile memory cells has a threshold voltage within one of a plurality of threshold voltage ranges,

wherein said threshold voltage ranges comprise a threshold voltage range indicating an erase state and a threshold voltage range indicating a program state,

wherein said control circuit controls moving said threshold voltages of said ones of nonvolatile memory cells to within said threshold voltage range indicating said erase state lebased on said operation steps ef corresponding to said erase command, and

wherein said control circuit controls moving said threshold voltage of one nonvolatile memory cell to within said threshold voltage range indicating said program state and staying said threshold voltages of remaining memory cells of ones of said nonvolatile memory cells within threshold voltage range indicating said erase state, based on said operation steps corresponding to said program command.

4. A nonvolatile memory apparatus according to claim 3 , wherein said control circuit comprises:

a circuit, and

wherein in said operation in response to said read command, said circuit senses status of data according to threshold voltage of said nonvolatile memory cell which is within said threshold voltage range indicating said erase state or within said threshold voltage range indicating said program state.

5. A nonvolatile memory apparatus according to claim 4 ,

wherein said other terminal is a data terminal,

wherein in said operation in response to said program command, said data terminal receives data in response to said clock signal, and

wherein in said operation in response to said read command, said data terminal outputs data in response to said clock signal.

6. A nonvolatile memory apparatus according to claim 1 , wherein said control circuit includes said program memory therein.

7. A nonvolatile memory apparatus according to claim 2 , wherein each of said nonvolatile memory cells has a threshold voltage within one of a plurality of threshold voltage ranges,

wherein said threshold voltage ranges comprise a threshold voltage range indicating an erase state and a plurality of threshold voltage ranges each indicating a corresponding program state,

wherein said control circuit controls moving said threshold voltages of said ones of nonvolatile memory cells to within said threshold voltage range indicating said erase state based on said operation steps corresponding to said erase command, and

wherein said control circuit controls moving said threshold voltage of one nonvolatile memory cell to within one of said threshold voltage ranges indicating said program states according to data and staying said threshold voltages of remaining memory cells of ones of said nonvolatile memory cells, based on said operation steps corresoonding to said program command.

8. A nonvolatile memory apparatus comprising:

a control circuit;

a converter circuit;

a first terminal;

a second terminal;

a third terminal; and

a plurality of nonvolatile memory cells,

wherein said first terminal receives a clock signal,

wherein said second terminal receives data in response to said clock signal and outputs data in response to said clock signal,

wherein said third terminal receives information for specifying arbitrarily any one of operations which include a read operation and a program operation,

wherein said control circuit executes operation steps corresponding to the specified operation read out from a program memory,

wherein in said read operation, said control circuit controls, based on operation steps corresponding to said read operation, reading data in parallel from ones of said nonvolatile memory cells, converting parallel type data to serial type data by said converter circuit, and serially outputting data via said second terminal, and

wherein in said program operation, said control circuit controls, based on operation steps corresponding to said program operation, serially receiving data via said second terminal, converting serial type data to parallel type data by said converter circuit and writing data irr parallel to ones of said nonvolatile memory cells.

9. A nonvolatile memory apparatus according to claim 8 , wherein said control circuit includes said program memory therein.

10. A nonvolatile memory apparatus according to claim 8 , wherein said operations further comprises:

an erase operation,

wherein when specifying said erase operation, said control circuit controls, based on operation steps corresponding to said erase operation, erasing data stored in ones of said nonvolatile memory cells.

11. A nonvolatile memory apparatus according to claim 10 , wherein each of said nonvolatile memory cells has a threshold voltage ranges,

wherein said threshold voltage ranges comprise a threshold voltage range indicating an erase state and a threshold voltage range indicating a program state, and

wherein said nonvolatile memory apparatus controls moving said threshold voltage of one nonvolatile memory cell to within said threshold voltage range indicating said program state and staying said threshold voltages of remaining memory cells of ones of said nonvolatile memory cells within threshold voltage range indicating said erase state, based on said operation steps corresponding to said program operation, and

wherein said nonvolatile memory apparatus controls moving said threshold voltages of ones nonvolatile memory cells to within said threshold voltage range indicating said erase state based on said operation steps corresponding to said erase operation.

12. A nonvolatile memory apparatus according to claim 11 , wherein said control circuit comprises:

a circuit, and

wherein in said read operation, said circuit senses status of data according to threshold voltage of said nonvolatile memory cell which is within said threshold voltage range indicating said program state or within said threshold voltage range indicating said erase state.

13. A nonvolatile memory apparatus according to claim 10 , wherein each of said nonvolatile memory cells has a threshold voltage within one of a plurality of threshold voltage ranges,

wherein said threshold voltage ranges comprise a threshold voltage range indicating an erase state and a plurality of threshold voltage ranges each of indicating a corresponding program state, and

wherein said nonvolatile memory apparatus controls moving said threshold voltage of one nonvolatile memory cell to within one of said threshold voltage ranges indicating said program states according to data and staying said threshold voltages of remaining memory cells of ones of said nonvolatile memory cells, based on said operation steps corresoonding to said program operation, and

wherein said nonvolatile memory apparatus controls moving said threshold voltages of ones of nonvolatile memory cells to within said threshold voltage range indicating said erase state based on said operation steps corresponding to said erase operation.

14. A nonvolatile memory apparatus comprising:

a control circuit;

a converter circuit;

a clock terminal

a data terminal;

a command terminal; and

a plurality of nonvolatile memory cells,

wherein said clock terminal receives a clock signal,

wherein said data terminal receives data in response to said clock signal and outputs data in response to said clock signal,

wherein said command terminal receives commands which include a read command and a program command,

wherein said control circuit executes operation steps corresponding to received command read out from a program memory,

wherein in an operation in response to said read command received from said command terminal, said control circuit controls, based on operation steps corresponding to said read command, reading data in parallel from ones of said nonvolatile memory cells, converting parallel type data to serial type data by said converter circuit, and serially outputting data via said data terminal, and

wherein in an operation in response said program command received from said command terminal, said control circuit controls, based on operation steps corresponding to said program command, serially receiving data via said data terminal, converting serial type data to parallel type data by said converter circuit, and writing data in parallel to ones of said nonvolatile memory cells.

15. A nonvolatile memory apparatus according to claim 14 , wherein said commands further comprise an erase command,

wherein in an operation in response to said erase command received from said command terminal, said control circuit controls, based on operation steps corresponding to said erase command, erasing data stored in ones of said nonvolatile memory cells.

16. A nonvolatile memory apparatus according to claim 15 , wherein each of said nonvolatile memory cells has a threshold voltage within one of a plurality of threshold voltage ranges,

wherein said threshold voltage ranges comprise a threshold voltage range indicating an erase state and a threshold voltage range indicating a program state,

wherein said nonvolatile memory apparatus controls moving said threshold voltages of said ones of nonvolatile memory cells to within said threshold voltage range indicating said erase state based on said operation steps corresponding said erase command, and

wherein said nonvolatile memory apparatus controls moving said threshold voltage of one nonvolatile memory cell to within said threshold voltage range indicating said program state and staying said threshold voltages of remaining memory cells of ones of said nonvolatile memory cells within threshold voltage range indicating said erase state, based on said operation steps corresponding to said program command.

17. A nonvolatile memory apparatus according to claim 16 , wherein said control circuit comprises:

a circuit, and

wherein in said operation in response to said read command, said circuit senses status of data according to threshold voltage of said nonvolatile memory cell which is within said threshold voltage range indicating said erase state or within said threshold voltage range indicating said program state.

18. A nonvolatile memory apparatus according to claim 14 , wherein said control circuit includes said program memory therein.

19. A nonvolatile memory apparatus according to claim 15 , wherein each of said nonvolatile memory cells has a threshold voltage within one of a plurality of threshold voltage ranges,

wherein said threshold voltage ranges comprise a threshold voltage range indicating an erase state and a plurality of threshold voltage ranges each indicating a corresponding program state,

wherein said nonvolatile memory apparatus controls moving said threshold voltages of said ones of nonvolatile memory cells to within said threshold voltage range indicating said erase state based on said operation steps corresponding to said erase command, and

wherein said nonvolatile memory apparatus controls moving said threshold voltage of one nonvolatile memory cell to within one of said threshold voltage ranges indicating said program states according to data and staying said threshold voltages of remaining memory cells of ones of said nonvolatile memory cells, based on said operation steps corresponding to said program command.