Plasma processing method
View Patent ↗Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. An etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce molecular chemical species such as CF 4 , CF 2 , CF 3 and C 2 F 4 for etching. This method assures a high etch rate and high selectivity while keeping a process window wide.
1. A method for manufacturing a semiconductor device, comprising the steps of:
providing a semiconductor substrate having a third film formed over a main surface of said substrate, a first film having a first hole pattern formed on said third film and a second film formed on said first film;
forming a mask having a second hole pattern on said second film, said second hole pattern having a hole width larger than that of said first hole pattern;
disposing said semiconductor substrate in a plasma reaction chamber;
introducing a gas including fluorine into said reaction chamber;
generating a plasma of said gas in said reaction chamber, thereby providing a fluorine reactive species, and CF 2 radical; and
increasing amount of CF 2 radical in said plasma by a reaction, to thereby selectively etch said second film using said mask.
2. The method according to claim 1 , wherein said mask is a photoresist mask.
3. The method according to claim 1 , wherein a magnetic wave is supplied into said reaction chamber.
4. The method according to claim 1 , further comprising the steps of reducing amount of fluorine reactive species in said plasma.
5. The method according to claim 1 , wherein said gas including fluorine does not include carbon, and another gas, which contains carbon, is also introduced into said reaction chamber.
6. The method according to claim 1 , wherein another gas, which is a carbon-containing gas, is also introduced with said gas including fluorine.
7. The method according to claim 1 , wherein said first film is an etching stopper layer.
8. The method according to claim 7 , wherein said etching stopper layer is comprised of a nitride film.
9. The method according to claim 1 , wherein said first film is an etching stopper layer, and wherein said second film is comprised of an oxide film.
10. The method according to claim 9 , wherein said etching stopper layer is comprised of a nitride film.
11. The method according to claim 1 , wherein amount of the CF 2 is increased by reaction with a solid material.
12. The method according to claim 11 , wherein a temperature of said solid material is controlled in a range of −60° to 250° C.
13. The method according to claim 11 , wherein said solid material is at a periphery of said semiconductor substrate.
14. The method according to claim 13 , wherein said solid material is an electrode located at the periphery of said semiconductor substrate.
15. A method for manufacturing a semiconductor device, comprising the steps of:
providing a semiconductor substrate having a first film above a main surface of said substrate, said first film having a first pattern, and providing a second film above said first film;
forming a mask having a second pattern on said second film, said second pattern having a width larger than a width of said first pattern;
disposing said semiconductor substrate in a plasma reaction chamber;
introducing a gas including fluorine into said chamber;
generating plasma of said gas in said reaction chamber, thereby providing a fluorine reactive species, and CF 2 radical; and
increasing amount of CF 2 radical reactive species in said plasma by a reaction to thereby selectively etch said second film using said second pattern as a mask.
16. The method according to claim 15 , wherein said first pattern is a first hole pattern.
17. The method according to claim 15 , wherein said mask is a photoresist mask.
18. The method according to claim 15 , further comprising the steps of reducing amount of fluorine reactive species in said plasma.
19. The method according to claim 15 , wherein said gas including fluorine does not include carbon, and another gas, which contains carbon, is also introduced into said reaction chamber.
20. The method according to claim 15 , wherein said first film is an etching stopper layer.
21. The method according to claim 20 , wherein said etching stopper layer is comprised of a nitride film.
22. The method according to claim 15 , wherein said first film is an etching stopper layer, and wherein said second film is comprised of an oxide film.
23. The method according to claim 22 , wherein said etching stopper layer is comprised of a nitride film.
24. The method according to claim 15 , wherein the amount of the CF 2 radical is increased using a controller, and wherein the controller is a solid material located at the periphery of said semiconductor substrate.
25. The method according to claim 24 , wherein a temperature of said solid material is controlled in a range of −60° to 250° C.