Semiconductor device having solder bumps reliably reflow solderable
View Patent ↗A semiconductor module solder bonding of high reliability in which the heat resisting properties of the circuit substrate and electronic parts are taken into consideration. In order to achieve this, there are provided semiconductor devices each having solder bumps as external pads, and a circuit substrate bonded to the external pads of each of the semiconductor devices through a solder paste, each of the solder bumps being made of a first lead-free solder, the solder paste being made of a second lead-free solder having a melting point lower than that of the first lead-free solder.
1. A semiconductor device having solder bumps each adapted to be connected to a Pb-free solder paste provided on each of pads of a substrate on which the semiconductor device is to be mounted,
the Pb-free solder paste consisting, by mass, of from about 2.0% to about 3.5% silver, about 0.3% to about 0.8% copper, and the balance of tin,
each of the solder bumps being Sn—Ag—Cu alloy Pb-free solder and having a solder composition of the same kind as that of the Pb-free solder paste,
wherein a content of silver contained in the solder bumps is lower than that of silver contained in the Pb-free paste, and wherein a melting temperature of the solder bumps is higher than a melting temperature of the Pb-free solder paste.
2. The semiconductor device according to claim 1 , wherein the Pb-free solder forming the solder bumps consists, by mass, of up about 2.0% silver, about 0.3 to about 0.8% copper, and the balance tin.
3. The semiconductor device according to claim 1 , wherein each of said solder bumps is made of a Sn, 1 mass % Ag, and 0.5 mass % Cu alloy.
4. The semiconductor device according to claim 1 , wherein said semiconductor device is made to be subjected to a reflow heating under a nitrogen gas atmosphere.
5. The semiconductor device according to claim 1 , wherein said semiconductor device is provided with a stress-relaxation layer.
6. The semiconductor device according to claim 1 ,
wherein the Pb-free solder of the solder bumps forms a mixture layer with the Pb-free solder paste between the solder paste and each of the solder bumps by diffusion when each of the solder bumps is subjected to reflow heating at a temperature lower than the melting temperature of said solder bumps but higher than the melting temperature of said Pb-free solder paste so that the remainder of each of the solder bumps remaining without completely melting is surrounded by both of said mixture layer and said Pb-free solder paste even on the side portion of the periphery of the solder bumps.
7. The semiconductor device according to claim 6 , wherein said mixture layer contains Ag not more than 3 mass %.