Method for forming resist pattern in reverse-tapered shape
View Patent ↗A negative-working radiation sensitive resin composition with good heat resistance and low water absorption, which is useful for formation of a resist pattern in the lift-off method or as an insulating member in a organic EL panel and is able to form a reverse tapered resist pattern with a good shape. The negative-working radiation sensitive resin composition comprises (A) an alkali-soluble resin obtained by polycondensation of methylol bisphenol compounds represented by general formula (I) below, phenol compounds used as necessary and aldehydes, (B) a crosslinking agent and (C) a photo-acid generator. The negative-working radiation sensitive resin composition is applied onto a substrate, exposed to light and developed to form a reverse tapered pattern. A metal pattern is formed by vapor-depositing a metal film over the reverse tapered pattern and then removing the resist pattern by developer. Wherein R 1 to R 4 each represent a hydrogen atom, a C 1 to C 3 alkyl group or —CH 2 OH whereupon at least one of R 1 to R 4 represents —CH 2 OH, and R 5 and R 6 each represent a hydrogen atom or a C 1 to C 3 alkyl group.
1. A method of forming a reverse tapered resist pattern by use of a negative-working radiation sensitive resin composition, wherein the negative-working radiation sensitive resin composition comprises an alkali-soluble resin obtained by polycondensation of methylol bisphenol compounds represented by the general formula (I) below, phenol compounds used at the ratio of from 40:60 to 100:0 by weight, respectively and aldehydes;
wherein R 1 to R 4 each represent a hydrogen atom, a C 1 to C 3 alkyl group or —CH 2 OH whereupon at least one of R 1 to R 4 represents —CH 2 OH, and R 5 and R 6 each represent a hydrogen atom or a C 1 to C 3 alkyl group.
2. The method of forming a reverse tapered resist pattern according to claim 1 , wherein said alkali-soluble resin is obtained by using the methylol bisphenol compounds represented by the general formula (I) above and the phenol compounds at the ratio of from 50:50 to 100:0 by weight.
3. A method of forming a metal film pattern, wherein a metal film is formed over a reverse tapered resist pattern obtained by the method of forming a reverse tapered resist pattern according to claim 1 and then the reverse tapered resist pattern is removed.
4. A method of forming a pattern made of a metal film, wherein a metal film is formed over a reverse tapered resist pattern obtained by the method of forming a reverse tapered resist pattern according to claim 1 and then said reverse tapered resist pattern is used as an insulating member between metal films.