Surface acoustic wave device and method of manufacturing the same
The invention provides a piezoelectric substrate in the form of a rectangular plate in which a Rayleigh wave is propagated, and an IDT and a reflector are provided by forming interdigital electrodes on the piezoelectric substrate. At least an end face on a shorter side of the piezoelectric substrate on a top side thereof is formed as a vertical smooth surface that is substantially in parallel with a conductor strip at an end of the reflector in the position of an imaginary node of a stress wave exiting the conductor strip, thereby providing a reflecting end face to reflect the stress wave.
1. A surface acoustic wave device, comprising:
a piezoelectric substrate in the form of a rectangular plate in which a Rayleigh wave is propagated, the piezoelectric substrate defining at least an end face of a shorter side; and
interdigital electrodes formed on the piezoelectric substrate to provide an IDT and a reflector, conductor strips being provided at an end of the reflector, the end face of the shorter side of the piezoelectric substrate being formed as a vertical smooth surface that is substantially in parallel with the conductor strips at the end of the reflector in a position of an imaginary node of a stress wave exiting the conductor strips, thereby providing a reflecting end face to reflect the stress wave, the reflecting end face being constituted by an inner side surface of a groove formed along the reflector and outside the reflector on a top side of the piezoelectric substrate.
2. The surface acoustic wave device according to claim 1 , the reflecting end face being provided to a depth at a predetermined distance from a top surface of the piezoelectric substrate in the position of the imaginary node of the stress wave and being configured with a step portion at a bottom end of the reflecting end face.
3. The surface acoustic wave device according to claim 1 , the reflecting end face being formed when a wafer constituting the piezoelectric material is cut into a size to form each piezoelectric substrate, and at least a part corresponding to the reflecting end face being formed through etching.
4. The surface acoustic wave device according to claim 1 , wherein a distance B from the base end of the conductor strips at the end of the reflector to the reflecting end face is determined according to the relationship:
B =( n×PR )±( PR/ 2)×δ
where λ is a wavelength of a Rayleigh wave, n is an integer, PR=λ/2, a width of the groove is n×PR, and δ is an allowance value in a range of ±1 associated with a position of the reflecting end face and the number of the conductor strips of the reflector when the number of pairs of electrode digits of the IDT is fixed.