Apparatus, method and system of liquid-based, wide range, fast response temperature control of electric devices
View Patent ↗An active temperature control system for a DUT utilizes a heat sink containing HFE7100 liquid and an electric heater. The liquid is cooled below the set point and the heater is used to bring the DUT up to the set point. Set points in the range of −10 degrees C. to +110 degrees C. can be achieved. The heat sink utilizes only a single coolant for all of the set points, allowing set points to be changed within a few minutes. At a given set point, the heater provides a quick response to offset the effect of self-heating and keep the set point deviation to within a few degrees C. Power following techniques can be utilized to achieve the quick response.
1. An apparatus for controlling a temperature of a semiconductor device, the apparatus comprising:
a plurality of heat exchangers provided at a corresponding plurality of regions on the semiconductor device; and
a temperature control system, coupled to said plurality of heat exchangers, for controlling temperatures within said regions of the semiconductor device.
2. An apparatus according to claim 1 , wherein the plurality of heat exchangers each have separate inlets and outlets for circulating liquid maintained at a predetermined temperature therethrough, whereby the plurality of heat exchangers are each separately controlled and maintained at separate temperatures.
3. An apparatus according to claim 2 , wherein the plurality of heat exchangers are each controlled using a single chiller.
4. An apparatus according to claim 1 , wherein each of the plurality of heat exchangers includes a heater and a heat sink having a chamber, and
wherein the temperature control system is adapted to move the temperature of each region of the device from approximately a first set point temperature to approximately a second set point temperature by changing the control of the heater in each of the plurality of heat exchangers and maintaining at a substantially constant temperature the liquid flowing into the chamber of the heat sink in each of the plurality of heat exchangers.
5. An apparatus according to claim 4 , wherein the liquid has an operative temperature range that extends as low as approximately −40 degrees C., and the operative set point temperatures extending as low as approximately −10 degrees C.
6. An apparatus according to claim 1 , wherein the heat exchangers comprise a heater adapted to be thermally coupled to the semiconductor device and a heat sink thermally coupled to the heater.
7. An apparatus according to claim 6 , wherein the heat sink defines a chamber and the chamber is adapted to have a liquid flowing through the chamber.
8. The apparatus of claim 7 , wherein the liquid which the chamber is adapted to have flowing through the chamber comprises ethyl nonafluorobutylether and ethyl nonafluoroisobutylether.
9. The apparatus of claim 1 , wherein the temperature control system is adapted to receive an input related to a temperature of a point on the semiconductor device.
10. The apparatus of claim 9 , wherein the temperature control system is adapted to maintain the temperature of the point on the semiconductor device at approximately a first set point temperature despite potential fluctuations in the semiconductor device temperature caused by self-heating.
11. The apparatus of claim 9 , wherein the temperature control system is adapted to maintain the temperature of the semiconductor device at approximately a set point temperature which is at least 50 degrees C. above a temperature of the liquid flowing into the heat sink.
12. The apparatus of claim 9 , wherein the input related to the temperature of the semiconductor device which the temperature control system is adapted to receive is selected from a group consisting of a power profile for the semiconductor device, power consumption of the semiconductor device, current consumption of the semiconductor device, temperature of the semiconductor device, and a signal containing information from a thermal structure in the semiconductor device.
13. The apparatus of claim 10 , wherein the temperature control system is adapted to control the temperature of the point on the semiconductor device to within +/−20 degrees C. of the first set point temperature despite potential fluctuations in the semiconductor device temperature caused by self-heating.
14. The apparatus of claim 1 , wherein the temperature control system is adapted to receive an input related to the temperature of the semiconductor device, and the temperature control system is adapted to maintain the temperature of the semiconductor device at approximately a first set point.
15. The apparatus of claim 14 , wherein the temperature control system is adapted to control the heater so as to maintain the temperature of the semiconductor device at or near the first set point temperature, and at or near a second set point temperature, despite potential fluctuations in the semiconductor device temperature caused by self-heating.
16. The apparatus of claim 15 , wherein the first set point temperature is less than −25 degrees C. and the second set point temperature is greater than 35 degrees C.
17. The apparatus of claim 1 , wherein the temperature control system is adapted to move the temperature of the point on the semiconductor device by at least 50 degrees C.