System and method utilizing a one-stage level shift circuit

1. A system comprising:

a first device that optimally functions with a first voltage and that outputs said first voltage;

a one-stage level shift device that receives said first voltage and generates a single output voltage that is higher than said first voltage, the level shift device comprising,

a first set of transistors that generate said output voltage during a first time period, and

a second set of transistors that generate said output voltage during a second time period,

wherein at least one of the first set of transistors and the second set of transistors comprises two PMOS devices and two NMOS devices; and

a second device that receives said output voltage to optimally function,

whereby said one-stage level shift device shifts said first voltage to said output voltage without an intermediate voltage.

2. The system of claim 1 , wherein said first device requires said first voltage to operate.

3. The system of claim 1 , wherein said second device requires said second voltage to operate.

4. The system of claim 1 , wherein said first set of transistors comprises a plurality of FET devices.

5. The system of claim 1 , wherein said first set of transistors comprises the two PMOS devices and two NMOS devices.

6. The system of claim 1 , wherein said second set of transistors comprises a plurality of FET devices.

7. The system of claim 1 , wherein said second set of transistors comprises the two PMOS devices and two NMOS devices.

8. The system of claim 1 , wherein said first set of transistors comprises:

a first FET device coupled to said first device at a gate;

a second FET device coupled at a drain to a source of said first FET device;

a third FET device coupled at a drain to a source of said second FET device; and

a fourth FET device coupled at a gate to a source of said third FET device and coupled to said second device.

9. The system of claim 1 , wherein said second set of transistors comprises:

a first FET device coupled to said first device at a gate;

a second FET device coupled at a drain to a source of said first FET device;

a third FET device coupled at a drain to a source of said second FET device; and

a fourth FET device coupled at a gate to a source of said third FET device and coupled to said second device.

10. The system of claim 1 , wherein:

said first voltage is in the form of a periodic signal;

said first time period occurs during a transition from a lower voltage to a higher voltage and during said higher voltage of said periodic signal; and

said second time period occurs during a transition from said higher voltage to said lower voltage and during said lower voltage of said periodic signal.

11. The system of claim 1 , wherein said first set of transistors comprises:

a first NMOS device coupled at a gate to said first device;

a first PMOS device coupled at a drain to a drain of said first NMOS device, wherein a gate of said first PMOS device is coupled to a relatively low voltage;

a second NMOS device coupled at a source to a source of said first PMOS device; and

a second PMOS device coupled at a gate to a drain of said second NMOS device and coupled at a drain to said second device.

12. The system of claim 1 , wherein said second set of transistors comprises:

a first NMOS device coupled at a gate to said first device;

a first PMOS device coupled at a drain to a drain of said first NMOS device, wherein a gate of said first PMOS is coupled to a predetermined voltage;

a second NMOS device coupled at a source to a source of said first PMOS device; and

a second PMOS device coupled at a gate to a drain of said second NMOS device and coupled at a drain to said second device.

13. The system of claim 1 , wherein:

the two NMOS devices in the first set of transistors include first and second NMOS devices and the two PMOS devices in the first set of transistors include first and second PMOS devices, wherein,

the first NMOS device is coupled at a gate to said first device;

the first PMOS device is coupled at a drain to a drain of said first NMOS device, wherein a gate of said first PMOS device is coupled to a first predetermined voltage;

the second NMOS device is coupled at a source to a source of said first PMOS device; and

the second PMOS device is coupled at a gate to a drain of said second NMOS device and coupled at a drain to said second device;

the two NMOS devices in the second set of transistors includes third and fourth NMOS devices and the two PMOS devices in the second set of transistors include third and fourth PMOS devices, wherein,

the third NMOS device is coupled at a gate to said first device;

the third PMOS device is coupled at a drain to a drain of said third NMOS device, wherein a gate of said third PMOS device is coupled to a second predetermined voltage;

the fourth NMOS device is coupled at a source to a source of said third PMOS device; and

the fourth PMOS device is coupled at a gate to a drain of said fourth NMOS device and coupled at a drain to said third PMOS device;

a drain of said second PMOS device is coupled to a drain of said fourth NMOS device; and

a drain of said fourth PMOS device is coupled to said drain of said second NMOS device.

14. The system according to claim 1 , wherein said first voltage is around 3-3.6V.

15. The system of claim 1 , wherein said output voltage is around 1-1.2V.

16. A system comprising a one-stage level shift device, the one-stage level shift device comprising:

a first NMOS device coupled at a gate to said first device;

a first PMOS device coupled at a drain to a drain of said first NMOS device, wherein a gate of said first PMOS device is coupled to a first predetermined voltage;

a second NMOS device coupled at a source to a source of said first PMOS device;

a second PMOS device coupled at a gate to a drain of said second NMOS device and coupled at a drain to a second device;

a third NMOS device coupled at a gate to said first device;

a third PMOS device coupled at a drain to a drain of said third NMOS device, wherein a gate of said third PMOS device is coupled to a second predetermined voltage;

a fourth NMOS device coupled at a source to a source of said third PMOS device; and

a fourth PMOS device coupled at a gate to a drain of said fourth NMOS device and coupled at a drain to said third PMOS device;

wherein a drain of said second PMOS device is coupled to a drain of said fourth NMOS device;

wherein a drain of said fourth PMOS device is coupled to said drain of said second NMOS device;

wherein a source of said first NMOS device and a source of said third NMOS device are coupled to ground potential;

wherein a source of said second PMOS device and a source of said fourth PMOS device are coupled to a third predetermined potential;

wherein said gate of said first NMOS device and said gate of said third NMOS device receive complementary input signals;

wherein said gate of said first NMOS device and said gate of said third NMOS device receive fourth predetermined potential that is relatively lower than said third predetermined potential;

wherein output signals at said drain of said second PMOS device and said drain of said fourth PMOS device are coupled to a fifth predetermined voltage that is relatively higher than said third predetermined voltage.

17. A system for performing one-stage level-shifting comprising:

means for receiving an input voltage;

means for shifting the input voltage directly to a higher output voltage using one-stage level shifting, the shifting means comprising,

first means for generating the output voltage during a first portion of the one-stage level shifting during a first time period; and

second means for generating the output voltage during a second portion of the one-stage level shifting during a second time period,

wherein at least one of the first and second means for generating comprises two PMOS devices and two NMOS devices; and

means for outputting the output voltage.

18. The system of claim 17 , further comprising:

using a periodic wave as the input voltage, wherein,

a first time period is during a transition of the periodic wave from a lower voltage to a higher voltage and during the higher voltage; and

a second time period is during a transition of the periodic wave from the higher voltage to the lower voltage and during the lower voltage.

19. The system of claim 17 , wherein said means for receiving receives a voltage in a range of 0.8V-1.6V as the input voltage.

20. The system of claim 17 , wherein said means for shifting outputs a voltage in a range of 2.9V-3.7V as the output voltage.

21. The system of claim 17 , wherein said means for shifting comprises means that can handle less than 2.8V during the one-stage level shifting.

22. The system of claim 13 , wherein:

a source of said first NMOS device and a source of third NMOS device are coupled to ground potential; and

a source of said second PMOS device and a source of fourth PMOS device are coupled to a third predetermined potential.

23. The system of claim 22 , wherein said gate first NMOS device and said gate of said third NMOS device complementary input signal.

24. The system of claim 23 , wherein:

said gate of said first NMOS device and said gate of said third NMOS device receive a fourth predetermined potential that is relatively lower than said third predetermined potential; and

output signals at said drain of said second PMOS device and said drain of said fourth PMOS device are coupled to a fifth predetermined voltage that is relatively higher than said third predetermined voltage.