Luminescence-phase change based data storage
View Patent ↗An ultra-high-density data storage device that relies on optical signals. The device includes a luminescent layer that emits light when stimulated by an electron beam. The device also includes a phase-change layer that contains data bits that may absorb or reflect the stimulated light before the light reaches a detector. Also, a method of data storage and retrieval that includes writing data bits in the phase-change layer, stimulating emissions in the luminescent layer, and reading data bits by monitoring the amount of light that reaches the detector.
1. A data storage device, comprising:
an electron source capable of emitting an electron beam with a sub-micron-scaled spot size;
a luminescent layer, located proximate to the electron source, the luminescent layer including a luminescent material capable of emitting light while being bombarded by the electron beam from the electron source;
a detector, located near the luminescent layer, for sensing the light; and
a phase-change layer located between the luminescent layer and the detector, the phase-change layer capable of local transformation from a first phase to a second phase by the electron beam from the electron source.
2. The device of claim 1 , wherein the first phase transmits the light through the phase-change-layer and wherein the second phase reflects the light.
3. The device of claim 1 , wherein the first phase transmits the light through the phase-change-layer and wherein the second phase absorbs the light.
4. The device of claim 3 , wherein the second phase absorbs the light in a first wavelength range and re-emits at least a portion of the light in a second wavelength range.
5. The device of claim 1 , wherein the first phase prevents transmission of the light through the phase-change-layer in a first wavelength range and the second phase absorbs the light in the first wavelength range and re-emits at least a portion of the light in a second wavelength range.
6. The device of claim 1 , wherein the first phase permits transmission of the light through the phase-change-layer in a first wavelength range and the second phase absorbs the light in the first wavelength range and re-emits at least a portion of the light in a second wavelength range.
7. The device of claim 1 , wherein the luminescent layer has a damage threshold temperature higher than a melting temperature of the phase-change layer.
8. The device of claim 1 , wherein the luminescent layer comprises a material having a high thermal conductivity.
9. The device of claim 1 , wherein the luminescent layer comprises a material having a low thermal conductivity.
10. The device of claim 1 , wherein the luminescent layer and the phase-change layer are adjacent and share an interface.
11. The device of claim 10 , wherein the interface has a radiative recombination rate and a non-radiative recombination rate that each depends on whether the phase-change layer is in the first phase or the second phase.
12. The device of claim 1 , wherein the luminescent layer comprises at least one of a YAG-based material, a rare earth element dopant, a YAP-based material, GaN, Zn oxide, Zn sulfide, and Si 3 O 4 .
13. The device of claim 1 , wherein the luminescent layer comprises an optically neutral medium and optically active nanoparticles in the optically neutral medium.
14. The device of claim 1 , further comprising an index matching layer positioned between the luminescent layer and the phase-change layer.
15. The device of claim 1 , further comprising an index matching layer positioned between the phase-change layer and the detector.
16. The device of claim 1 , further comprising a reflective layer positioned between the luminescent layer and the electron source.
17. A method of data storage and retrieval, the method comprising the steps of:
writing data to a device having an electron source capable of emitting an electron beam with a sub-micron-scaled spot size, a luminescent layer, located proximate to the electron source, the luminescent layer including a luminescent material capable of emitting light while being bombarded by the electron beam from the electron source, a detector, located near the luminescent layer, for sensing the light; and a phase-change layer located between the luminescent layer and the detector, the phase-change layer capable of local transformation from a first phase to a second phase by the electron beam from the electron source, the writing step including transforming a portion of the phase-change layer from the first phase to the second phase via an electron beam; and
reading data from the device by stimulating light emission in the luminescent layer with a reduced-power-density electron beam and monitoring the light emitted from the luminescent layer that reaches the detector.
18. The method of claim 17 , wherein the step of writing further comprises the step of:
heating the luminescent layer with the electron beam such that the first portion of the phase-change layer transforms from the first phase to the second phase as heat travels from the luminescent layer to the phase-change-layer.
19. The method of claim 17 , wherein the step of reading further comprises the steps of:
providing a detector that detects light in a first wavelength range; stimulating light emission from the luminescent layer in a second wavelength range; absorbing at least a portion of the light emission with the phase-change layer; and re-emitting light in the first wavelength range from the phase-change layer.
20. The method of claim 17 , wherein the step of reading further comprises the step of:
using a portion of the phase-change layer that is in the second phase to reflect some of the light away from the detector.
21. The method of claim 17 , wherein the step of reading further comprises the step of:
using a portion of the phase-change layer that is in the second phase to absorb some of the light.