Edge termination in MOS transistors
View Patent ↗A RESURF trench gate MOSFET has a sufficiently small pitch (close spacing of neighbouring trenches) that intermediate areas of the drain drift region are depleted in the blocking condition of the MOSFET. However, premature breakdown can still occur in this known device structure at the perimeter/edge of the active device area and/or adjacent the gate bondpad. To counter premature breakdown, the invention adopts two principles: the gate bondpad is either connected to an underlying stripe trench network surrounded by active cells, or is directly on top of the active cells, and a compatible 2D edge termination scheme is provided around the RESURF active device area. These principles can be implemented in various cellular layouts e.g. a concentric annular device geometry, which may be circular or rectangular or ellipsoidal, in the active area and in the edge termination, or a device array of such concentric hexagonal or circular stripe cells, or a device array of square active cells with stripe edge cells, or a device array of hexagonal active cells with an edge termination of hexagonal edge cells.
1. A semiconductor device comprises:
a semiconductor body having an active cell area wherein trenches containing gate material extend into the semiconductor body from a surface thereof, and wherein adjacent to each trench gate there is a source region at said semiconductor body surface;
the semiconductor body also having an inactive cell area wherein trenches containing gate material extend into the semiconductor body from the surface thereof, and wherein the source region is not present;
characterised in that a gate bondpad at least partially overlies the active cell area, or an area substantially surrounded by the active cell area, and is connected thereto.
2. A semiconductor device as claimed in claim 1 , in which the gate bondpad overlies and is located substantially entirely within the active cell area.
3. A semiconductor device as claimed in claim 2 , in which a subsidiary inactive cell area is located beneath the gate bondpad, and is contained within the active cell area.
4. A semiconductor device as claimed in claim 1 , in which the perimeter of the device includes a termination area.
5. A semiconductor device as claimed in claim 4 , in which the edge termination area is a trench network, forming a non-floating p-type or n-type implant.
6. A semiconductor device as claimed in claim 4 , in which the edge termination area comprises at least one floating poly-silicon spacer used as a field plate.
7. A semiconductor device as claimed in claim 4 , in which the edge termination area comprises a field plate on dielectric material in a perimeter trench, which dielectric material forms a thicker dielectric layer than a dielectric layer on said gate material in the active cell area.
8. A semiconductor device as claimed in claim 4 , in which the edge termination area is constructed according to a Kao ring scheme.
9. A semiconductor device as claimed in claim 4 , in which the edge termination area is constructed according to known 2D edge termination schemes.
10. A semiconductor device as claimed in claim 1 , in which cells in the active area are surrounded by a plurality of substantially concentric ring trenches.
11. A semiconductor device as claimed in claim 10 , in which the ring trenches are substantially circular or are substantially elliptical.
12. A semiconductor device as claimed in claim 10 , in which the ring trenches are substantially polygonal, for example square ring trenches, rectangular ring trenches or hexagonal ring trenches.
13. A semiconductor device as claimed in claim 10 , in which a plurality of cells have a common set of outer concentric ring trenches.
14. A semiconductor device as claimed in claim 10 , in which the ring trenches have different widths.
15. A semiconductor device as claimed in claim 10 , in which the cells are joined to a common gate bondpad.
16. A semiconductor device as claimed in any one of the preceding claims, in which the trenches in the active and inactive cell areas are sufficiently closely spaced (sufficiently small pitch) that intermediate areas of the drain drift region are depleted in a blocking condition of the device.