Patent Assignment
Reel/Frame 048328/0964
Release of Security Interest
Recorded: 2019-02-13
Pages: 16
Assignor
MORGAN STANLEY SENIOR FUNDING, INC.
Executed: 2019-02-11
Assignee
NXP B.V.
HIGH TECH CAMPUS 60, EINDHOVEN, NL-5656 AG, NETHERLANDS
Covered Properties
(182)
Logic Circuit of the Emitter-Coupled Type, Operating at a Low Supply Voltage
Patent:
5,717,347 →
Application:
08/631,385 →
Method of Manufacturing a Semiconductor Device Suitable for Surface Mounting
Patent:
5,712,197 →
Application:
08/645,436 →
Method for Making Shallow Trench Isolation Structure Having Rounded Corners
Patent:
5,753,561 →
Application:
08/723,903 →
Method of Manufacturing a Semiconductor Device for Surface Mounting Suitable for Comparatively High Voltages, and Such a Semiconductor Device
Patent:
5,930,653 →
Application:
08/762,515 →
Oxide Etch Stop Techniques for Uniform Damascene Trench Depth
Patent:
6,057,227 →
Application:
08/880,580 →
Component Comprising a Capacitor
Patent:
6,125,027 →
Application:
08/903,143 →
Silicon-Enriched Shallow Trench Oxide for Reduced Recess During Ldd Spacer Etch
Patent:
6,013,558 →
Application:
08/907,099 →
Differential Mos Current-Mode Logic Circuit Having High Gain and Fast Speed
Patent:
5,977,800 →
Application:
08/955,012 →
Output Driver Circuit with Jump Start for Current Sink on Demand
Patent:
6,100,712 →
Application:
08/992,290 →
Semiconductor Device with Improved Breakdown Voltage Characteristics
Patent:
5,910,670 →
Application:
08/995,467 →
Method of Manufacturing a Semiconductor Device Having "Shallow Trench Isolation"
Patent:
5,966,616 →
Application:
09/044,499 →
Methods for Making Shallow Trench Capacitive Structures
Patent:
6,010,939 →
Application:
09/052,865 →
Semiconductor Device Having Load Device with Trench Isolation Region and Fabrication Thereof
Patent:
6,140,188 →
Application:
09/083,251 →
Method for Forming Aligned Vias Under Trenches in a Dual Damascene Process
Patent:
6,221,759 →
Application:
09/100,639 →
Temperature Sensing Circuits
Patent:
6,084,462 →
Application:
09/129,809 →
Method of Manufacturing a Semiconductor Device with a Schottky Junction
Patent:
6,218,222 →
Application:
09/141,644 →
A Stable Voltage Regulator Having First-Order and Second-Order Output Voltage Compensation
Patent:
6,060,871 →
Application:
09/174,222 →
Semiconductor Power Device Manufacture
Patent:
6,251,730 →
Application:
09/348,960 →
Trench-Gate Semiconductor Device
Patent:
6,255,692 →
Application:
09/372,961 →
Power Transistor Device Having Hot-Location and Cool-Location Temperature Sensors
Patent:
6,144,085 →
Application:
09/377,359 →
High Differential Impedance Load Device
Patent:
6,154,018 →
Application:
09/388,034 →
Method for a Consistent Shallow Trench Etch Profile
Patent:
6,342,428 →
Application:
09/411,758 →
Non-Power-Of-Two Gray-Code Counter and Binary Incrementer Therefor
Patent:
6,314,154 →
Application:
09/434,218 →
Trench-Gate Semiconductor Devices and Their Manufacture
Patent:
6,541,817 →
Application:
09/450,229 →
Trench-Diffusion Corner Rounding in a Shallow -Trench (Sti) Process
Patent:
6,150,234 →
Application:
09/465,151 →
Esd Diode Structure
Patent:
6,674,129 →
Application:
09/466,411 →
Shallow Trench Isolation Method for Forming Rounded Bottom Trench Corners
Patent:
6,544,860 →
Application:
09/519,310 →
Trench-diffusion corner rounding in a shallow-trench (sti) process
Patent:
6,326,283 →
Application:
09/519,908 →
Voltage regulator circuit
Patent:
6,222,353 →
Application:
09/583,325 →
Switching arrangement and switch component for a DC-DC converter
Patent:
6,175,225 →
Application:
09/606,340 →
Cellular trench-gate field -effect transistors
Patent:
6,359,308 →
Application:
09/624,481 →
Voltage Stabilized Low Level Driver
Patent:
6,433,622 →
Application:
09/642,181 →
Manufacture of trench-gate semiconductor devices
Patent:
6,368,921 →
Application:
09/671,888 →
Semiconductor Device Having a Field Effect Transistor and a Method of Manufacturing Such a Device
Patent:
6,420,755 →
Application:
09/709,663 →
Manufacture of Trench-Gate Semiconductor Devices
Manufacture of Semiconductor Material and Devices Using That Materia
Semiconductor Element with Metal Layer
A Semiconductor Device Having a Plurality of Resistive Paths
Voltage Regulator Circuit
Field-Effect Semiconductor Devices
Schottky Diode
Method of Making a Mosfet Structure Having Improved Source/Drain Junction Performance
Trench Semiconductor Device Manufacture with a Thicker Upper Insulating Layer
Semiconductor Device
Self-Aligned Dual-Oxide Umosfet Device and a Method of Fabricating Same
Trench-Gate Field-Effect Transistors with Low Gate-Drain Capicitance and Their Manufacture
Patent:
6,566,708 →
Application:
09/993,201 →
Manufacture of Trench-Gate Semiconductor Devices
Switching Regulator with Isolated Drivers
Semiconductor Devices
Field Effect Transistor Structure and Method of Manufacture
Trench-Gate Semiconductor Devices and Their Manufacture
Trench-Gate Semiconductor Devices, and Their Manufacture
Manufacture of Semiconductor Devices with Schottky Barriers
Trench-Gate Semiconductor Devices and Their Manufacture
Semiconductor Devices and Their Manufacture
Edge Termination in Mos Transistors
Edge Termination in a Trench-Gate Mosfet
Trench-Gate Semiconductor Devices and the Manufacture Thereof
Combination of a Control Unit and a Logic Application, in Which the Combination Is Connected to a System Clock
Method and Non-Invasive Device for Focusing Acoustic Waves
Trench-Gate Semiconductor Devices
Semiconductor Device with Sense Structure
Power Semiconductor Devices
Semiconductor Device and Method of Manufacturing Thereof
Fail-Safe Method and Circuit
Semiconductor Devices and Methods of Manufacture Thereof
Integrated Half-Bridge Power Circuit
Method of Manufacturing a Trench-Gate Semiconductor Device
Vertical Insulated Gate Transistor and Manufacturing Method
Method of Manufacture of a Trench-Gate Semiconductor Device
Semiconductor Device and Method of Manufacturing Such a Device
Chip Transfer Method and Apparatus
Semiconductor Device Having an Edge Termination Structure and Method of Manufacture Thereof
Lateral Field-Effect Transistor Having an Insulated Trench Gate Electrode
Punch-Through Diode and Method of Processing the Same
Trench Mos Structure
Operation and Circuitry of a Power Conversion and Control Circuit
Circuits and Methods for Failure Prediction of Parallel Mosfets
Dynamic Control of Capacitance Elements in Field Effect Structures
A Switching Circuit for Handling Signal Voltages Greater Than the Supply Voltage
Trench Mosfet
Trench Insulated Gate Field Effect Transistor
Trench Field Effect Transistor and Method of Making It
Trench-Gate Transistors and Their Manufacture
Trench Semiconductor Device and Method of Manufacturing It
Trench-Gate Semiconductor Devices, and Their Manufacture
Semiconductor Devices Including Voltage-Sustaining Space-Charge Zone and Methods of Manufacture Thereof
Electronic Device Comprising an Esd Device
Insulated Gate Field Effect Transistors
Field Effect Transistor Circuit and Method of Operation of Field Effect Transistor Circuit for Reducing Thermal Runaway
Mosfet with Temperature Sense Facility
Method of Manufacturing a Semiconductor Device Having a Buried Doped Region
Circuit and Method for Determining Current in a Load
Layer Sequence and Method of Manufacturing a Layer Sequence
4-Level Logic Decoder
Semiconductor Device with Grounding Structure
Trench-Gate Transistors and Their Manufacture
Logic Modules for Semiconductor Integrated Circuits
Substrate Isolated Intergrated High Voltage Diode Integrated Within a Unit Cell
Punchthrough Diode and Method of Manufacturing Thereof
Integrated Circuit and Assembly Therewith
Tunnel Field Effect Transistor
Commutating Auto Zero Amplifier
Bond Pad Structure and Method for Producing Same
Esd-Protection Device, a Semiconductor Device and Integrated System in a Package Comprising Such a Device
Voltage Regulator with Gate Resistor for Improved Efficiency
Trench Gate Mosfet and Method of Manufacturing the Same
Contact Structure for an Electronic Circuit Substrate and Electronic Circuit Comprising Said Contact Structure
Arrangement and Approach for Coupling Power Supplies Using Controlled Switching Techniques
Esd Protection Circuit
Meander Resistor
Esd Protection Device
Integrated Circuit and Assembly Therewith
Backdrive Protection Circuit
Trench-Gate Semiconductor Device
Protection for an Integrated Circuit
3D Integration of a Mim Capacitor and a Resistor
Edge Termination Region of a Semiconductor Device
Current-Sensing Circuit
Integrated Advance Copper Fuse Combined with Esd/Over-Voltage/Reverse Polarity Protection
Semiconductor Device with Gate Trench
Method for Fabricating an Integrated-Passives Device with a Mim Capacitor and a High-Accuracy Resistor on Top
Cmos Adjustable Over Voltage Esd and Surge Protection for Led Application
Circuit Connector Apparatus and Method Therefor
Protection Circuit
Surge Protection Device
Application:
13/502,229 →
Publication:
US 2012/0200976
Methods, Systems and Devices for Electrostatic Discharge Protection
A Vertical MOSFET Transistor with a Vertical Capacitor Region
Low/High Voltage Selector
Trench-Gate Resurf Semiconductor Device and Manufacturing Method
Semiconductor Device Having Isolation Trenches
Proportional-Integral-Derivative (Pid) Analog Controller and a Method for Testing a Pid Analog Controller of a Dc/Dc Converter
Group 13 Nitride Semiconductor Device and Method of Its Manufacture
Discrete Semiconductor Device Package and Manufacturing Method
Heterojunction Semiconductor Device with Conductive Barrier Portion and Manufacturing Method
Cascoded Semiconductor Devices
Cascoded Semiconductor Devices
Antenna Resonance Frequency Control Using an Active Rectifier or a Driver Stage
Esd Protection
Cascoded Semiconductor Devices
Cascode Circuit
Gan Hemts and Gan Diodes
Transistor with Reducted Parasitic
Application:
14/180,418 →
Publication:
US 2015/0236090
Cascode Semiconductor Device for Power Factor Correction
Cascoded Semiconductor Devices with Gate Bias Circuit
Semiconductor Device and Manufacturing Method
A Vertical Mosfet Transistor with a Vertical Capacitor Region
Electrode Coating for Electron Emission Devices Within Cavities
Electric Field Gap Device and Manufacturing Method
Electric Field Gap Device and Manufacturing Method
Exposed-Heatsink Quad Flat No-Leads (QFN) Package
Application:
14/322,553 →
Publication:
US 2016/0005680
Current Control Circuit with in Parallel Transistor Modules
Pneumatic Wafer Expansion
Diode Having a Reduced Surface Field Effect Trench Structure and Method of Manufacturing a Diode Having a Reduced Surface Field Effect Trench Structure.
Esd Protection Device
Package with Multiple I/O Side-Solderable Terminals
Autonomous Power Supply
Discrete Semiconductor Device Package and Manufacturing Method
Trench-Gate Resurf Semiconductor Device and Manufacturing Method
Semiconductor Device
A Semiconductor Device Comprising an Active Layer and a Schottky Contact
Semiconductive Device and Associated Method of Manufacture
Semiconductor Device
Semiconductor Device and Manufacturing Method
Semiconductor Device
Heterojunction Semiconductor Device and Manufacturing Method
Interface Apparatus with Leakage Mitigation
Air-Guided Tape-and-Reel System and Method
Built-Up Lead Frame Package and Method of Making Thereof
Leadless Semiconductor Package and Method
Semiconductor Device Having Control Conductors
Cascode Transistor Circuit
Electrostatic Discharge Protection Device
Metallisation for Semiconductor Device
Semiconductor Device
Semiconductor Arrangement
Common Mode Choke
Semiconductor Device
Semiconductor Device
Data Transmission System
Semiconductor Device
Overmolded Chip Scale Package
Application:
15/060,548 →
Publication:
US 2017/0256432
Related Assignments
(2)
Other recorded transfers of the patents in this record — the chain of ownership.