Electrode coating for electron emission devices within cavities
View Patent ↗Embodiments of a method for forming a field emission diode for an electrostatic discharge device include forming a first electrode, a sacrificial layer, and a second electrode. The sacrificial layer separates the first and second electrodes. The method further includes forming a cavity between the first and second electrode by removing the sacrificial layer. The cavity separates the first and second electrodes. The method further includes depositing an electron emission material on at least one of the first and second electrodes through at least one access hole after formation of the first and second electrodes. The access hole is located remotely from a location of electron emission on the first and second electrode.
1. A method for forming a field emission diode for an electrostatic discharge device, the method comprising:
forming a first electrode, a sacrificial layer, and a second electrode, wherein the sacrificial layer separates the first and second electrode;
forming a cavity between the first and second electrode by removing the sacrificial layer, wherein the cavity separates the first and second electrodes; and
depositing an electron emission material on a surface of at least one of the first and second electrodes through at least one access hole after formation of the first and second electrodes, wherein the access hole is located remotely from a location of electron emission on the first or second electrodes;
plugging the access hole after depositing the electron emission material and forming a vacuum or low gas pressure in the cavity, wherein the cavity is hermetically sealed.
2. The method of claim 1 , wherein the electron emission material is deposited with selective electroless deposition on the surface of the first and second electrodes.
3. The method of claim 1 , further comprising:
selectively depositing the electron emission material on the first and second electrodes through an access hole, and wherein the electron emission material is palladium.
4. The method of claim 1 , wherein the electron emission material is palladium, wherein the palladium is deposited with selective electroless deposition on the surface of at least one of the first and second electrodes.
5. The method of claim 1 , wherein at least one of the first or second electrodes is formed with field enhancement structures.
6. The method of claim 1 , wherein the electron emission material is deposited with chemical vapor deposition.
7. The method of claim 1 , wherein the first electrode is formed with field enhancement structures, wherein depositing an electron emission material on at least one of the first and second electrodes through an access hole comprises coating tips of the field enhancement structures.
8. The method of claim 1 , wherein the depositing the electron emission material on the surface of at least one of the first and second electrodes through an access hole comprises selectively coating the first electrode.
9. The method of claim 1 , wherein the depositing the electron emission material on the surface of at least one of the first and second electrodes through an access hole comprises only partially covering the surface of one of the first or second electrodes and forming clusters of the electron emission material on the surface of the one of the first or second electrodes.
10. The method of claim 1 , further comprising:
etching a silicon oxide sacrificial layer, wherein etching removes oxide from the surface of the first and second electrode.
11. The method of claim 1 , wherein the first electrode is silicon and the second electrode is silicon.
12. A method for selectively coating an electrode in a cavity of a field emission diode, the method comprising:
depositing an electron emission material into a cavity of a formed field emission diode,
wherein the electron emission material is deposited on a surface of at least one of a first and second electrode,
wherein the depositing occurs through an access hole,
wherein the access hole is located remotely from a location of electron emission on the first and second electrode;
plugging the access hole after depositing the electron emission material and forming a low pressure vacuum in the cavity, wherein the cavity is hermetically sealed.
13. The method of claim 12 , wherein the electron emission material is deposited with selective electroless deposition on the surface of the first and second electrodes.
14. The method of claim 12 , wherein the electron emission material is deposited by selectively coating the first electrode by electrolytic deposition.
15. The method of claim 12 , wherein the depositing an electron emission material comprises immersing the surfaces of the first and second electrode in a deposition bath comprising a solution comprising palladium.
16. The method of claim 12 , wherein the electron emission material is palladium.
17. The method of claim 12 , wherein the depositing an electron emission material comprises only partially covering the surface of the first electrode and forming clusters of the electron emission material on the surface of the first electrode.
18. The method of claim 12 , wherein the first electrode comprises field enhancement structures, wherein depositing an electron emission material comprises coating tips of the field enhancement structures.