Trench-gate semiconductor device
View Patent ↗A trench-gate semiconductor device is disclosed, in which the player ( 10,6 ) which forms the body region (in a n-channel device) extends adjacent the trench ( 4 ) deeper into the device, to lie adjacent a lower trench electrode ( 3 b , 3 c ). Since the p-layer extension ( 6 ) forms part of the channel, it must be very low doped, in order not to increase unduly the channel resistance in the on-state. The replacement of some of the out-diffusion resistance in the drift region by the (smaller) channel resistance results in a lower over-all Rdson. In the off-state, the p-layer forms, together with the underlying n-drift layer, a non-abrupt function, so that the depletion region in the off-state extends closer to the top surface ( 2 ) than for a conventional RSO trench-MOS, being split between the p- and n-layers, rather than all being in the n-drift region. The invention does not require a RESURF device structure, so has wide process windows, since the dopant levels and layer thicknesses do not have to be controlled to provide charge balancing.
1. A trench-gate semiconductor device comprising
a semiconductor body having a major surface defining a plane,
a trench extending into the semiconductor from the major surface and having sidewalls and having therein a conductive gate and a field plate,
the conductive gate having a bottom level which is a first distance from the plane, the conductive gate being spaced apart from the sidewalls by a first gate oxide layer of a first thickness,
the field plate being more remote from the plane than is the conductive gate, and being spaced apart from the sidewalls by a second gate oxide layer of a second thickness which is thicker than the first thickness,
a first region of a first conductivity type adjacent the trench at the major surface,
a second region of the first conductivity type and having a first doping level of a first dopant and spaced apart from the first region by a gap, wherein the second region comprises an epitaxial silicon layer, and wherein the doping of the epitaxial silicon layer is linearly or exponentially graded,
and a channel-accommodating region of a second conductivity type therebetween filling the gap, the channel-accommodating region having a first layer which has a second doping level of a second dopant and a second layer which is more remote from the surface than the first layer and which has a third doping level of a third dopant, the first layer being adjacent the second layer adjacent the trench at a second distance from the plane which is less than the first distance,
the channel-accommodating region being adjacent the second region and at a third distance that is measured from the plane to a bottom level of the second layer of the channel-accommodating region, wherein the field plate has a top level that is at a fourth distance from the plane and a bottom level that is at a fifth distance from the plane, and wherein the third distance is greater than the fourth distance but less than the fifth distance,
wherein the channel-accommodating region is adjacent the trench across the whole of the gap,
the third distance is greater than the first distance,
and the third doping level is such that, in operation, when a reverse bias is applied across the trench-gate semiconductor device, at least 30% of the bias is across the channel accommodating region.
2. A trench-gate semiconductor device according to claim 1 , wherein, when a reverse bias is applied across the trench-gate semiconductor device, at least half the bias is across the channel-accommodating region.
3. A trench-gate semiconductor device according to claim 1 , wherein the field plate is electrically connected to the conductive gate.
4. A trench-gate semiconductor device according to claim 1 , wherein the field plate is electrically connected to a source contact.
5. A trench-gate semiconductor device according to claim 1 , wherein the field plate is electrically connected to a fixed bias voltage.
6. A trench-gate semiconductor device according to claim 1 , wherein the third doping level is in the range 1E15/cm3 to 5E15/cm3.
7. A trench-gate semiconductor device according to claim 1 , wherein the third doping level is less than or equal to 1E15/cm3.
8. A trench-gate semiconductor device according to claim 1 , wherein the first doping level is in the range 5E16/cm3 to 5E17/cm3.
9. A trench-gate semiconductor device according to claim 1 , wherein the second dopant is the same as the third dopant.
10. A trench-gate semiconductor device according to claim 1 , wherein the first conductivity type is n-type and the second conductivity type is p-type.
11. A trench-gate semiconductor device according to claim 1 , wherein the second region is the epitaxial silicon layer.