Granted Patent B2

US 8,735,957 · App. 13/549,684 · Granted May 27, 2014

Abstract

Claims (22)

1. An integrated circuit die comprising a substrate separating one of either a source or drain region from a semiconductor region, said integrated circuit comprising:

a vertical transistor region including:

said source or drain region;

a gate electrode formed in a trench extending into said semiconductor region, the gate electrode being electrically insulated from the semiconductor region by a dielectric lining in said trench; and

the other one of said source or drain region in said semiconducting region;

an insulating trench terminating said vertical transistor region; and

a vertical capacitor region adjacent to said vertical transistor region, a first capacitor plate of said vertical capacitor region comprising the source or drain region separated from the semiconductor region by the substrate, said vertical capacitor region further comprising at least one trench extending into the semiconductor region, said at least one trench comprising an electrically insulating liner material electrically insulating a conductive material defining a second capacitor plate separated from the first capacitor plate.

2. The integrated circuit die of claim 1 , wherein the vertical capacitor region comprises a plurality of said trenches, wherein the portions of the semiconductor region in between said trenches comprise an impurity.

3. The integrated circuit die of claim 1 , wherein the at least one trench of the vertical capacitor region extends into the substrate.

4. A semiconductor package comprising:

a first voltage terminal;

a second voltage terminal;

a first die comprising a first MOSFET having a drain region electrically connected to the first voltage terminal and further having a source region; and

a second die adjacent to the first die, the second die comprising a second MOSFET having a drain region electrically connected to the source region of the first MOSFET and having a source region electrically connected to the second voltage terminal,

wherein the first die or the second die is an integrated circuit die according to claim 1 , and wherein the one of the plates of the vertical capacitor is electrically connected to the drain region of the first MOSFET and the other of said plates is electrically connected to the source region of the second MOSFET.

5. The semiconductor package of claim 4 , wherein the drain region of the first MOSFET and the first plate of the capacitor share the same doped region of the first die.

6. The semiconductor package of claim 4 , wherein the source region of the second MOSFET and the first plate of the capacitor share the same doped region of the first die.

7. The semiconductor package of claim 4 , wherein the first MOSFET and the second MOSFET each comprise a gate electrode, the package further comprising an integrated circuit comprising a driver circuit electrically connected to the respective electrodes.

8. The semiconductor package of claim 7 , wherein the integrated circuit further comprises a pulse width modulation circuit.

9. The semiconductor package of claim 8 , further comprising a further integrated circuit comprising a pulse width modulation circuit.

10. The semiconductor package of any of the preceding claims, wherein the first voltage terminal comprises a supply voltage terminal and the second voltage terminal comprises a ground terminal.

11. A printed circuit board carrying the semiconductor package according to claim 4 .

Assignments (12)