Diode having a reduced surface field effect trench structure and method of manufacturing a diode having a reduced surface field effect trench structure
View Patent ↗A diode comprising a reduced surface field effect trench structure, the reduced surface field effect trench structure comprising at least two trenches formed in a substrate and separated from one another by a joining region of the substrate, the joining region comprising an electrical contact and a layer of p-doped semiconductor material.
1. A diode comprising a reduced surface field effect trench structure, the reduced surface field effect trench structure comprising at least two trenches formed in a substrate and separated from one another by a joining region of the substrate, the joining region comprising an electrical contact and a layer of p-doped silicon germanium with a monocrystalline structure, wherein the at least two trenches are covered by a layer of p-doped silicon germanium with a polycrystalline structure, wherein the substrate comprises monocrystalline silicon and each trench comprises polycrystalline silicon separated from the monocrystalline silicon by a layer of silicon oxide, wherein the silicon oxide extends above upper surfaces of the monocrystalline silicon and the polycrystalline silicon, and wherein the silicon oxide has a top end with an angled top surface that extends above an upper surface of the layer of p-doped silicon germanium with the monocrystalline structure and extends below an upper surface of the layer of p-doped silicon germanium with the polycrystalline structure.
2. The diode of claim 1 , wherein the joining region further comprises a layer of n-doped semiconductor material.
3. The diode of claim 2 , wherein the layer of p-doped silicon germanium with the monocrystalline structure and the layer of n-doped semiconductor material have a combined thickness of no more than 40 nm.
4. The diode of claim 1 , wherein the layer of silicon germanium with the monocrystalline structure comprises one or more of p-doped silicon germanium, p-doped silicon, p-doped silicon germanium carbide, and p-doped silicon carbide.
5. The diode of claim 2 , wherein the layer of n-doped semiconductor material comprises n-doped silicon germanium.
6. The diode of claim 1 , wherein the electrical contact comprises one or more of a metal, an alloy, and a silicide.
7. The diode of claim 1 , wherein each trench comprises a guard collar termination region at the edge of the trench.
8. A method of making a reduced surface field effect trench structure for a diode, the method comprising:
forming at least two trenches in a substrate separated from one another by a joining region of the substrate; and
forming an electrical contact and a layer of p-doped silicon germanium with a monocrystalline structure at the joining region, wherein the at least two trenches are covered by a layer of p-doped silicon germanium with a polycrystalline structure, wherein the substrate comprises monocrystalline silicon and each trench comprises polycrystalline silicon separated from the monocrystalline silicon by a layer of silicon oxide, wherein the silicon oxide extends above upper surfaces of the monocrystalline silicon and the polycrystalline silicon, and wherein the silicon oxide has a top end with an angled top surface that extends above an upper surface of the layer of p-doped silicon germanium with the monocrystalline structure and extends below an upper surface of the layer of p-doped silicon germanium with the polycrystalline structure.
9. The method of claim 8 , wherein the method comprises forming the layer of p-doped silicon germanium with a monocrystalline structure before forming the at least two trenches and electrical contact.
10. The method of claim 8 , wherein forming the electrical contact comprises:
forming a layer of silicon on top of the layer of p-doped silicon germanium with a monocrystalline structure;
depositing a layer of metal on top of the layer of silicon; and
annealing the metal and silicon layers to form a monosilicide.
11. The method of claim 10 , wherein forming the electrical contact comprises one or both of:
etching any unreacted metal after forming the monosilicide; and
annealing the monosilicide to form a disilicide.
12. A computer-readable storage medium containing a computer program comprising computer code, herein execution of the computer code by one or more processors causes the one or more processors to perform one or more method steps of claim 8 .
13. The diode of claim 1 , wherein the layer of silicon germanium with the monocrystalline structure comprises one or more of p-doped silicon, p-doped silicon germanium carbide, and p-doped silicon carbide.
14. The diode of claim 1 , wherein the electrical contact comprises one of an alloy and a silicide.