Punch-through diode and method of processing the same
View Patent ↗A monolithically integrated punch-through diode with a Schottky-like behavior. This is achieved as a Schottky-metal area ( 16 ) is deposited onto at least part of the first p-doped well's ( 9 ) surface. The Schottky-metal area ( 16 ) and the p-doped well ( 9 ) form the metal-semiconductor-transition of a Schottky-diode. The overvoltage protection of the inventive PT-diode is improved as the forward characteristic has a voltage drop that is less than 0.5V.
1. A punch-through diode realized as a monolithically integrated circuit based an a silicon dice or chip, comprising an n+-doped substrate covered with an n-doped epilayer; a first p-well and a second p-well implanted into the n-doped epilayer with a distance between the two wells; an n-well penetrating through the n-doped epilayer and into the n+-substrate; a first p+-doped well which connects both the first and the second p-doped wells; a polysilicon area on the n-epilayer between the first and the second p-doped wells overlapping the edges of an oxide layer; characterized in that a Schottky-metal area is deposited onto at least part of the first p-doped well's surface thus forming a metal—semiconductor—transition and that a second p+-doped well is implanted into the first p-doped well.
2. Use a punch-through diode according to any of the claim 1 for over voltage protection in an integrated circuit.
3. A punch-through diode realized as a monolithically integrated circuit based an a silicon dice or chip, comprising a p+-doped substrate covered with a p-doped epilayer; a first n-well and a second n-well implanted into the p-doped epilayer with a distance between the two wells; a p-well penetrating through the p-doped epilayer and into the p+-substrate; a first n+-doped well which connects both the first and the second n-doped wells; a polysilicon area on the p-epilayer between the first and the second n-doped wells overlapping the edges of an oxide layer; characterized in that a Schottky-metal area is deposited onto at least part of the first n-doped well's surface thus forming a metal—semiconductor—transition and that a second n+-doped well is implanted into the first n-doped well.
4. A punch-through diode according to claim 3 characterized in that the monolithic integrated circuit is built on a wafer.
5. A punch-through diode according to claim 3 characterized in that the Schottky-metal overlaps the edges of the ambient oxide layer.
6. A punch-through diode as claimed in claim 3 characterized in that the Schottky-metal area is made of a material from the group comprising aluminum (Al), titanium (Ti), iron (Fe), chrome (Cr), nickel (Ni), molybdenum (Mo), palladium (Pd).
7. A punch-through diode according claim 3 characterized in that the punch-through diode comprises a layer of aluminum on the surface of the n + -substrate or p + -substrate to enable the contact of a first terminal point of the punch-through diode.
8. A punch-through diode according to claim 3 claims characterized in that the punch-through diode comprises a metalized layer above the Schottky-metal area and the polysilicon area that enables the contact to a second terminal point.
9. A punch-through diode as claimed in claim 3 characterized in that it is realized as a thick film circuit.
10. An electronic appliance, comprising a punch-through diode according to claim 3 .