Granted Patent B2

US 9,230,953 · App. 14/516,978 · Granted Jan 5, 2016

Abstract

Claims (19)

1. A semiconductor ESD protection device comprising a vertical arrangement of alternating conductivity type layers, wherein the layers are arranged as a silicon controlled rectifier and wherein the silicon controlled rectifier is arranged as a vertical device and having top and bottom opposing contacts, wherein the alternating conductivity type layers comprise a first p-type layer, a first n-type layer that surrounds the first p-type layer, a second p-type layer that surrounds the first n-type layer, an N-type epitaxial layer that surrounds the second p-type layer and an N-type silicon substrate underneath the N-type epitaxial layer.

2. The semiconductor ESD protection device of claim 1 , wherein the vertically arranged silicon controlled rectifier is made up of a first and a second transistor.

3. The semiconductor ESD protection device of claim 2 , wherein the first transistor is of opposite conductivity type to the second transistor.

4. The semiconductor ESD protection device of claim 3 wherein the first transistor is a PNP transistor and the second transistor is a NPN transistor.

5. The semiconductor ESD protection device of claim 3 wherein the first transistor is a NPN transistor and the second transistor is a PNP transistor.

6. The semiconductor ESD protection device of claim 4 , wherein a base terminal of the NPN transistor is floating.

7. The semiconductor ESD protection device of claim 5 , wherein a base terminal of the PNP transistor is floating.

8. The semiconductor ESD protection device of claim 2 , wherein the top contact is arranged such that it short circuits an emitter terminal and a base terminal of the first transistor.

9. The semiconductor ESD protection device of claim 1 further comprising a lateral type diode integrated with the vertically arranged silicon control rectifier, wherein the lateral type diode and vertically arranged silicon control rectifier share a common substrate.

10. The semiconductor ESD protection device of claim 9 wherein a low ohmic contact is arranged to connect an anode terminal of the lateral type diode to a cathode terminal of the silicon control rectifier.

11. The semiconductor ESD protection device of claim 10 , further comprising a plurality of isolation layers arranged to electrically isolate the lateral type diode from the silicon control rectifier.

12. The semiconductor ESD protection device of claim 11 wherein the isolation layers are trench isolation layers and a deep implant region.

13. The semiconductor ESD protection device of claim 1 , where the vertically arranged silicon control rectifier further comprises a trigger implant.

14. The semiconductor ESD protection device of claim 2 , wherein the trigger implant is provided in a base region of the first transistor and collector region of the second transistor.

15. A high speed data transfer line comprising the semiconductor device of claim 1 .

16. A semiconductor ESD protection device comprising a vertical arrangement of alternating conductivity type layers, wherein the layers are arranged as a silicon controlled rectifier and wherein the silicon controlled rectifier is arranged as a vertical device and having top and bottom opposing contacts, wherein the semiconductor ESD protection device further comprises:

a lateral type diode integrated with the vertically arranged silicon control rectifier;

a plurality of isolation layers arranged to electrically isolate the lateral type diode from the silicon control rectifier; and

a metal contact or track formed on one edge of the semiconductor ESD protection device, wherein the metal contact or track continuously covers a P-type layer, an N-type epitaxial layer, one of the isolation layers, and a n-type substrate, wherein the lateral type diode and vertically arranged silicon control rectifier share a common substrate.

Assignments (12)