Bond pad structure and method for producing same
View Patent ↗It is described a bond pad structure and a method for producing the same, the bond pad structure ( 1 ), comprising: a substrate ( 3 ) having a surface ( 17 ) to be electrically contacted; a first isolator layer ( 5 ) contacting the surface ( 17 ) of the substrate in a first region (a); a first metal layer ( 9 ) contacting the surface ( 17 ) of the substrate ( 3 ) in a second region (b) adjacent the first region (a) and partly overlapping the first isolator layer ( 5 ); a second isolator layer ( 11 ) at least partly overlapping the first isolator layer ( 5 ) and the first metal layer ( 9 ); a second metal layer ( 13 ) at least partly overlapping the second isolator layer ( 11 ) in the second region (b); wherein a maximum thickness (U) of the second metal layer ( 13 ) perpendicular to the surface ( 17 ) of the substrate ( 3 ) is smaller than a maximum thickness (t 0 ) of the first isolator layer ( 5 ) perpendicular to the surface ( 17 ) of the substrate ( 3 ). The surface of the second isolator layer forming the highest level provides scratching protection for the bond pad structure.
1. A bond pad structure, comprising:
a substrate having a surface to be electrically contacted;
a first isolator layer contacting the surface of the substrate in a first region;
a first metal layer contacting the surface of the substrate in a second region adjacent the first region and partly overlapping the first isolator layer;
a second isolator layer at least partly overlapping the first isolator layer and the first metal layer;
a second metal layer at least partly overlapping the second isolator layer in the second region;
wherein a maximum thickness of the second metal layer perpendicular to the surface of the substrate is smaller than a maximum thickness of the first isolator layer perpendicular to the surface of the substrate; and
wherein the maximum distance of a surface of the second metal layer away from the substrate to the surface of the substrate is smaller by a gap amount than the maximum distance of a surface of the second isolator layer away from the substrate to the surface of the substrate.
2. The bond pad structure according to claim 1 , wherein the second metal layer does not overlap the first isolator layer.
3. The bond pad structure according to claim 1 , wherein the gap amount is greater than about 0.3 μm.
4. The bond pad structure according to claim 1 , wherein the second isolator layer contacts the surface of the substrate in a third region adjacent the first region.
5. The bond pad structure according to claim 1 , wherein the first isolator layer is made with silicon oxide and the second isolator layer is made with silicon nitride.
6. The bond pad structure according to claim 1 , wherein the first metal layer is made with a metal forming a Schottky contact with the substrate.
7. The bond pad structure according to claim 1 , wherein the second metal layer is made with a solderable metal.
8. An integrated circuit element comprising a bond pad structure according to claim 1 .
9. The bond pad structure according to claim 1 , wherein the gap amount is greater than about 0.5 μm.
10. A method for producing a bond pad structure comprising:
providing a substrate having a surface to be electrically contacted;
depositing a first isolator layer contacting the surface of the substrate in a first region;
depositing a first metal layer contacting the surface of the substrate in a second region adjacent the first region and the first metal layer partly overlapping the first isolator layer;
depositing a second isolator layer at least partly overlapping the first isolator layer and the first metal layer;
depositing a second metal layer at least partly overlapping the second isolator layer in the second region;
wherein a thickness of the second metal layer perpendicular to the surface of the substrate is smaller than a thickness of the first isolator layer perpendicular to the surface of the substrate; and
wherein the maximum distance of a surface of the second metal layer away from the substrate to the surface of the substrate is smaller by a gap amount than the maximum distance of a surface of the second isolator layer away from the substrate to the surface of the substrate.
11. The method of claim 10 , wherein the gap amount is greater than about 0.3 μm.
12. The method of claim 10 , wherein the gap amount is greater than about 0.5 μm.