Granted Patent
Utility
US 6,465,311
· Confirmation No. 8015
METHOD OF MAKING A MOSFET STRUCTURE HAVING IMPROVED SOURCE/DRAIN JUNCTION PERFORMANCE
Inventor:
Jayarama N. Shenoy
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⬇ PDF
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-06-11 | DRW |
Drawings-only black and white line drawings | 9 | View | |
| 2001-04-17 | TRNA |
Transmittal of New Application | 3 | View | |
| 2001-04-17 | A.PE |
Preliminary Amendment | 8 | View | |
| 2001-04-17 | SPEC |
Specification | 18 | View | |
| 2001-04-17 | CLM |
Claims | 7 | View | |
| 2001-04-17 | ABST |
Abstract | 1 | View | |
| 2001-04-17 | DRW |
Drawings-only black and white line drawings | 12 | View | |
| 2001-04-17 | OATH |
Oath or Declaration filed | 2 | View |
Inventors
Jayarama N. Shenoy
Santa Clara, CA
Attorneys & Agents of Record
Classification
USPC
438/300
Prosecution
- Examiner
- NGUYEN, THANH T
- Art Unit
- 2813
- Customer No.
- 24737
- Docket No.
- PHA 50991A
- Confirmation No.
- 8015
Publication
- Pub. No.
- US20010031536A1
- Pub. Date
- 2001-10-18
Patent Term Adjustment
0days
CHANGE OF NAME
Recorded 2006-12-22
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2002-08-26
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Quick Facts
- Patent No.
- US 6,465,311
- App. No.
- 09/836,936
- Filed
- 2001-04-17
- Granted
- 2002-10-15
- Pub. No.
- US20010031536A1
- Examiner
- NGUYEN, THANH T
- Art Unit
- 2813
- PTA
- 0 days
External Links