Semiconductor device
A semiconductor device and a method of making the same. The device includes a semiconductor substrate provided in a chip-scale package (CSP). The device also includes a plurality of contacts provided on a major surface of the substrate. The device further includes an electrically floating metal layer forming an ohmic contact on a backside of the semiconductor substrate. The device is operable to conduct a current that passes through the substrate from a first of said plurality of contacts to a second of said plurality of contacts via the metal layer on the backside.
1. A semiconductor device comprising:
a semiconductor substrate provided in a chip-scale package (CSP);
a plurality of contacts provided on a major surface of the semiconductor substrate, wherein the semiconductor substrate comprises a thinner part that is thinner in a vicinity of at least one of the contacts than it is outside an active region of the semiconductor device, and the thinner part comprises one or more grooves located on a backside of the semiconductor substrate; and
an ohmic contact formed by an electrically floating metal layer on the backside of the semiconductor substrate,
wherein the semiconductor device is configured to conduct a current that passes through the semiconductor substrate from a first contact of said plurality of contacts to a second contact of said plurality of contacts via the electrically floating metal layer on the backside of the semiconductor substrate, and
wherein either the first contact or the second contact is electrically connected to the electrically floating metal layer by an electrically conductive portion extending through the semiconductor substrate from the first or second contact to the electrically floating metal layer.
2. The semiconductor device of claim 1 , wherein the electrically conductive portion comprises one or more vias and/or trenches containing metal.
3. The semiconductor device of claim 1 , wherein at least one of said plurality of contacts at least partially surrounds another of said plurality of contacts on the major surface of the semiconductor substrate.
4. The semiconductor device of claim 1 , wherein the semiconductor device is a transient voltage suppression (TVS) diode.
5. The semiconductor device of claim 1 , wherein:
said plurality of contacts includes a third contact; and
the semiconductor device comprises a bipolar transistor in which the first contact is an emitter contact, the second contact is a collector contact, and the third contact is a base contact; or
the semiconductor device comprises a MOS transistor in which the first contact is a source contact, the second contact is a drain contact, and the third contact is a gate contact.
6. The semiconductor device of claim 1 , wherein the semiconductor device is configured to mount on a surface of a carrier, and wherein the electrically floating metal layer configured not to connect to an external pin of the semiconductor device.
7. A semiconductor device comprising:
a semiconductor substrate provided in a chip-scale package (CSP);
a plurality of contacts provided on a major surface of the semiconductor substrate, wherein the semiconductor substrate comprises a thinner part that is thinner in a vicinity of at least one of the contacts than it is outside an active region of the semiconductor device, and the thinner part comprises one or more grooves located on a backside of the semiconductor substrate; and
an ohmic contact formed by an electrically floating metal layer on the backside of the semiconductor substrate,
wherein the semiconductor device is configured to conduct a current that passes through the semiconductor substrate from a first contact of said plurality of contacts to a second contact of said plurality of contacts via the electrically floating metal layer on the backside of the semiconductor substrate, and
wherein the electrically floating metal layer does not contact an entire surface of the backside of the semiconductor substrate and contacts only those parts of the backside of the semiconductor substrate that are located substantially opposite the first contact and the second contact on the major surface of the semiconductor substrate.
8. The semiconductor device of claim 7 , wherein the electrically conductive portion extends from the electrically floating metal layer on the backside of the semiconductor substrate, partially through the semiconductor substrate toward one or more of said plurality of contacts.
9. A semiconductor device comprising:
a semiconductor substrate provided in a chip-scale package (CSP);
a plurality of contacts provided on a major surface of the semiconductor substrate;
an ohmic contact formed by an electrically floating metal layer on a backside of the semiconductor substrate; and
a barrier comprising a trench containing a dielectric, wherein the trench extends from the major surface of the semiconductor substrate at least partially through the semiconductor substrate, the barrier being located in the semiconductor substrate between a first contact of said plurality of contacts and a second contact of said plurality of contacts, wherein the barrier is configured to partially block direct current flow through the semiconductor substrate between the first contact and the second contact,
wherein the semiconductor device is configured to conduct a current that passes through the semiconductor substrate from a first contact of said plurality of contacts to a second contact of said plurality of contacts via the electrically floating metal layer on the backside of the semiconductor substrate.
10. A method comprising:
providing a semiconductor wafer for forming a semiconductor substrate of a semiconductor device;
providing a plurality of contacts on a major surface of the semiconductor wafer;
providing an electrically floating metal layer on a backside of the semiconductor wafer to form an ohmic contact;
providing an electrically conductive portion extending from the electrically floating metal layer on the backside of the semiconductor substrate, at least partially through the semiconductor substrate toward one or more of said plurality of contacts; and
dicing the semiconductor wafer to form one or more of the semiconductor devices for a chip-scale package (CSP), wherein each semiconductor device has the semiconductor substrate formed from the diced semiconductor wafer,
wherein the one or more semiconductor devices are configured to conduct a current that passes through the semiconductor substrate from a first contact of said plurality of contacts to a second contact of said plurality of contacts via the electrically floating metal layer on a backside of the semiconductor substrate,
wherein the electrically floating metal layer does not contact an entire surface of the backside of the semiconductor substrate and contacts only parts of the backside of the semiconductor substrate that are located substantially opposite the surface of the first contact and the surface of the second contact on the major surface of the semiconductor substrate; and
wherein the electrically conductive portion extending from the electrically floating metal layer on the backside of the semiconductor substrate comprises one or more vias and/or trenches containing metal.