Tunnel field effect transistor
View Patent ↗A tunnel transistor includes source diffusion ( 4 ) of opposite conductivity type to a drain diffusion ( 6 ) so that a depletion layer is formed between source and drain diffusions in a lower doped region ( 8 ). An insulated gate ( 16 ) controls the position and thickness of the depletion layer. The device includes a quantum well formed in accumulation layer ( 20 ) which is made of a different material to the lower layer ( 2 ) and cap layer ( 22 ).
1. A semiconductor device, comprising:
a source diffusion of a first conductivity type at a first major surface of the semiconductor device;
a drain diffusion a second conductivity type opposite to the first conductivity type laterally spaced from the source diffusion at the first major surface;
a lower doped region between the source diffusion and the drain diffusion at the first major surface, the lower doped region having a lower dopant concentration than the source diffusion and the drain diffusion;
an insulated gate on the first major surface over the lower doped region;
wherein the semiconductor device includes a cap layer of a first semiconductor material at the first major surface, an accumulation layer formed under the cap layer of a second semiconductor material different to the first semiconductor material, and a lower layer under the accumulation layer of a different material to the second semiconductor material to form a quantum well for confining electrons, holes, or both in the accumulation layer.
2. The semiconductor device according to claim 1 , wherein the cap layer and lower layer are of silicon and the accumulation layer is of silicon germanium.
3. The semiconductor device according to claim 2 wherein the accumulation layer is graded having a formula Si 1-x Ge x with the value x varying with depth below the first major surface.
4. The semiconductor device according to claim 3 wherein x varies from 0 at the interface between the accumulation layer and the lower layer to a maximum value at the interface between the accumulation layer and the cap layer.
5. The semiconductor device according to claim 4 wherein the maximum value of x is in the range 0.2 to 0.5.
6. The semiconductor device according to claim 1 , wherein the drain diffusion extends from the first major surface through an interface between the cap layer and the accumulation layer but is spaced from the interface between the accumulation layer and the lower layer.
7. The semiconductor device according to claim 1 , wherein a thickness of the accumulation layer is in the range 5 nm to 20 nm.
8. The semiconductor device according to claim 1 , wherein a thickness of the cap layer is in the range 3 nm to 15 nm.
9. The semiconductor device according to claim 1 , wherein the first conductivity type is n type and the second conductivity type is p type.
10. A method of operation of a semiconductor device including a source diffusion of a first conductivity type at a first major surface of the semiconductor device, a drain diffusion of a second conductivity type opposite to the first conductivity type laterally spaced from the source diffusion at the first major surface, a lower doped region between the source diffusion and the drain diffusion at the first major surface, the lower doped region having a lower dopant concentration than the source diffusion and the drain diffusion, an insulated gate on the first major surface over the lower doped region, wherein the semiconductor device includes a cap layer of a first semiconductor material at the first major surface, an accumulation layer formed under the cap layer of a second semiconductor material different to the first semiconductor material, and a lower layer under the accumulation layer of a different material to the second semiconductor material to form a quantum well for confining electrons, holes, or both in the accumulation layer, the method comprising:
applying a voltage between the source diffusion and drain diffusion; and
applying a voltage to the gate electrode to modulate the width of a depletion region in the lower doped region between a region of first conductivity type at the source region and a region of second conductivity type at the drain region.