Method of manufacture of a trench-gate semiconductor device
View Patent ↗A method of making a trench MOSFET includes forming a layer of porous silicon ( 26 ) at the bottom of a trench and then oxidizing the layer of porous silicon ( 26 ) to form a plug ( 30 ) at the bottom of the trench. This forms a thick oxide plug at the bottom of the trench thereby reducing capacitance between gate and drain.
1. A method of manufacturing a trench gate semiconductor device comprising the steps of: providing a silicon device body having a first major surface, the silicon device body having a drain region of a first conductivity type and a body region over the drain region; forming a trench extending downwards into the silicon device body from the first major surface, the trench having sidewalls and a base; lining the sidewalls of the trench with dielectric liner; etching the silicon at the base of the trench to form porous silicon at the base of the trench, the dielectric liner formed on the sidewalls of trench preventing the sidewalls from also becoming porous; and thermally oxidizing the device to oxidize the porous silicon at the bottom of the trench to form a plug at the base of the trench; and depositing conductive material within the trench to form a gate.
2. A method of manufacturing a trench gate semiconductor device comprising the steps of:
providing a silicon device body having a first major surface, the silicon device body having a drain region of a first conductivity type and a body region over the drain region;
forming a trench extending downwards into the silicon device body from the first major surface, the trench having sidewalls and a base:
etching the silicon at the base of the trench to form porous silicon at the base of the trench; and thermally oxidizing the device to oxidize the porous silicon at the bottom of the trench to form a plug at the base of the trench and to form sidewall oxide on the sidewalls of the trench;
etching away the oxide formed on the sidewalls and forming a gate oxide by thermal oxidation on the sidewalls; and
after the step of forming the gate oxide, depositing conductive material within the trench to form a gate.
3. A method according to claim 1 wherein the step of forming the trench includes providing a mask on the first major surface defining an opening and etching the trench extending downwards from the first major surface through the opening.
4. A method according to claim 3 wherein the mask is an oxide hard mask.
5. A method according to claim 3 wherein the step of etching the silicon at the bottom of the trench to form porous silicon includes dry-etching the bottom of the trench through the same mask used to define the trench.
6. A method of manufacturing a trench gate semiconductor device comprising the steps of:
providing a silicon device body having a first major surface, the silicon device body having a drain region of a first conductivity type and a body region over the drain region;
forming a trench extending downwards into the silicon device body from the first major surface, the trench having sidewalls and a base;
depositing a silicon plug in the trench;
etching the silicon at the base of the trench including the silicon plug to form porous silicon at the base of the trench;
thermally oxidizing the device to oxidize the porous silicon at the bottom of the trench; and
depositing conductive material within the trench to form a gate.
7. A method according to claim 1 further comprising forming a source implant of first conductivity type at the first major surface adjacent to the trench and forming source, gate and drain electrodes attached to the source implant, the gate and the drain region at the bottom of the trench respectively to complete the trench gate semiconductor device.
8. A method of manufacturing a trench gate semiconductor device, the method comprising:
providing a silicon device body having a first major surface, the silicon device body having a drain region of a first conductivity type and a body region over the drain region;
forming a trench extending downwards into the silicon device body from the first major surface, the trench having sidewalls and a base;
lining the sidewalls of the trench with a dielectric liner;
etching the silicon at the base of the trench to form porous silicon at the base of the trench, the dielectric liner formed on the sidewalls of trench preventing the sidewalls from also becoming porous;
thermally oxidizing the device to oxidize the porous silicon at the base of the trench to form a plug at the base of the trench, wherein thermally oxidizing the device forms sidewall oxide on the sidewalls of the trench; and
depositing conductive material within the trench to form a gate.
9. A method of manufacturing a trench gate semiconductor device, the method comprising:
providing a silicon device body having a first major surface, the silicon device body having a drain region of a first conductivity type and a body region over the drain region;
forming a trench extending downwards into the silicon device body from the first major surface, the trench having sidewalls and a base;
etching the silicon at the base of the trench to form porous silicon at the base of the trench;
thermally oxidizing the device to oxidize the porous silicon at the base of the trench to form a plug at the base of the trench, wherein thermally oxidizing the device forms sidewall oxide on the sidewalls of the trench;
etching away the sidewall oxide and forming a gate oxide by thermal oxidation on the sidewalls of the trench; and
after etching away the sidewall oxide, depositing conductive material within the trench to form a gate.
10. The method of claim 8 , wherein forming the trench includes providing a mask having an opening and on the first major surface and etching through the opening.
11. The method of claim 10 , wherein the mask is an oxide hard mask.
12. The method of claim 10 , wherein etching the silicon at the base of the trench to form porous silicon includes dry-etching the base of the trench through the same mask used to define the trench.
13. The method of claim 10 , further comprising forming a source implant of the first conductivity type at the first major surface adjacent to the trench and forming source, gate and drain electrodes attached to the source implant, the gate and the drain region at the bottom of the trench respectively.