Plasma cleaning gas with lower global warming potential than SF6
View Patent ↗A process for cleaning a deposit from an interior surface of a processing chamber includes generating a plasma from a cleaning gas including SO 2 F 2 and contacting the interior surface with the plasma for a time sufficient to convert the deposit into a volatile product, thereby cleaning the deposit from the interior surface, in which the process is conducted in the absence of SF 6 . The deposits, which may be removed by the process of the invention, include silicone, silicone oxide, silicone nitride, tungsten, copper and aluminum.
1. A process for cleaning a deposit from an interior surface of a processing chamber, said process comprising:
generating a plasma from a cleaning gas comprising SO 2 F 2 ; and
contacting the interior surface with the plasma for a time sufficient to convert the deposit into a volatile product, thereby cleaning the deposit from the interior surface, wherein the process is conducted in the absence of SF 6 .
2. The process of claim 1 , wherein said deposit is selected from the group consisting of silicone, silicone oxide and silicone nitride.
3. The process of claim 1 , wherein said deposit is selected from the group consisting of tungsten, copper and aluminum.
4. The process of claim 1 , wherein said cleaning gas consists essentially of SO 2 F 2 .
5. The process of claim 1 , wherein said cleaning gas comprises at least 99% SO 2 F 2 by volume.
6. The process of claim 1 , wherein said cleaning gas contains not more than 1% impurities by volume, wherein said impurities are selected from the group consisting of HF, HCl, Cl 2 , SO 2 and C 2 H 4 Cl 2 .
7. The process of claim 1 , wherein said cleaning gas further comprises at least one inert gas.
8. The process of claim 7 , wherein said inert gas is argon or xenon.
9. The process of claim 7 , wherein said inert gas comprises 0.1% to 10% by volume of said cleaning gas.
10. The process of claim 1 , further comprising a step of removing the volatile product and any unreacted cleaning gas from the processing chamber.
11. The process of claim 10 , further comprising a step of decomposing the unreacted cleaning gas by a hydrolysis.
12. The process of claim 1 , wherein the plasma is generated in the processing chamber.
13. The process of claim 1 , wherein the plasma is generated in an auxiliary reactor separate from the processing chamber.