Method of stabilizing material layer
View Patent ↗A method of stabilizing the properties of a material layer is disclosed. A plurality of wafers are stored in a FOUP and in sequence the wafers are transferred to a chamber to proceed with deposition of a material layer and to the FOUP filled with a specific gas after deposition until all the wafers in the FOUP are treated. In the process of deposition, the wafers deposited with material layers on their surfaces are stored in the FOUP filled with specific gas. Therefore, the surface properties of all the wafers in the FOUP are stablilized and contamination due to outgassing is prevented.
1. A method of stabilizing a material layer, comprising the steps of
(a) providing a plurality of wafers;
(b) transferring at least one of the wafers to a chamber;
(c) treating the wafer within the chamber and forming a material layer over the wafer, wherein a material of the material layer is selected from the group consisting of metal nitrides and metal silicides;
(d) transferring the treated wafer to a FOUP;
(e) repeating steps (b) to (d) until all the wafers have been treated; and
(f) purging a gas into the FOUP during the Steps (b) to (e) so that a property of the material layers of all the wafers is consistent.
2. The method of claim 1 , wherein the material layer includes a titanium nitride film and the gas includes nitrogen so that the titanium nitride film on each wafer has a consistent low resistance value.
3. The method of claim 1 , wherein the material layer includes a titanium nitride film and the gas includes oxygen so that the titanium nitride film on each wafer has a consistent high resistance value.
4. The method of claim 1 , wherein the gas includes inert gas.
5. The method of claim 1 , wherein the gas includes nitrogen.
6. The method of claim 1 , wherein the gas includes oxygen.
7. The method of claim 1 , wherein the metal silicides include tungsten silicides.
8. The method of claim 1 , wherein the metal silicides include titanium silicides.
9. The method of claim 1 , wherein the metal silicides include tantalum silicides.