Semiconductor memory device
View Patent ↗In a semiconductor memory device having a capacitor layer comprising a dielectric film or a ferroelectric film, as an interlayer insulation film formed between the capacitor and a wiring layer formed at the upper part thereof or an insulation film which covers the wiring layer, a multilayered film is used which consists of a first insulation film and a second insulation film laid upon the other; the former being a lower layer and being formed of an organic film, and the latter being an upper layer and being formed of a hard-mask material. This makes it possible to prevent thin film comprised of a dielectric material or a ferroelectric material from any deterioration caused by the hydrogen and water contained in the interlayer insulation film and passivation film of the semiconductor memory device and also by the stress of these films.
1. A semiconductor memory device having a capacitor in which a thin film of a dielectric material having a high dielectric constant or of a ferroelectric material is used as a capacitive insulation film, wherein
an interlayer insulation film formed between the capacitor and a wiring layer formed at the upper part thereof comprises a multilayered film consisting of a first insulation film and a second insulation film laid upon the other; said first insulation film being a lower layer and being formed of a film containing an organic matter, so as to cover a memory region including at least said capacitor and to be in contact with said capacitive insulation film, and said second insulation film being an upper layer and being formed of a hard-mask material having barrier properties to hydrogen, and an electrode of said wiring layer is connected to said capacitor through openings formed by running through said first insulation film and said second insulation film.
2. The semiconductor memory device according to claim 1 , wherein the relative dielectric constant of said first insulation film is less than 4.0, and is smaller than the relative dielectric constant of said second insulation film.
3. The semiconductor memory device according to claim 1 , wherein said second insulation film contains at least one of SiO 2 , Al 2 O 3 , CrO 2 , TiN, lead titanate zirconate, barium strontium titanate, niobium strontium bismuth tantalate, SrBi 2 Ta 2 O 9 , ZrSiO 4 , Y 2 O 3 , BaTiO 3 , La 2 O 3 , Gd 2 O 3 , and PrO 2 .
4. The semiconductor memory device according to claim 1 , wherein said second insulation film is so disposed as to cover a memory region including at least said capacitor.
5. A semiconductor memory device manufacturing process comprising the steps of:
forming a first insulation film comprised of an organic insulation film material, on a semiconductor substrate having thereon a capacitor in which a thin film of a dielectric material having a high dielectric constant or of a ferroelectric material is used as a capacitive insulation film, said first insulation film being formed so as to cover a memory region including at least said capacitor and to be in contact with said capacitive insulation film;
forming on the first insulation film a second insulation film comprised of a hard-mask material having barrier properties to hydrogen;
forming openings in said second insulation film by using a resist pattern which is located on the second insulation film as a mask;
forming openings in said first insulation film by using said resist pattern and said second insulation film as masks; and
forming a wiring layer to connect an electrode of said capacitor to said wiring layer through openings running through said first insulation film and said second insulation film.
6. The semiconductor memory device manufacturing process according to claim 5 , wherein the step of forming said first insulation film is the step of forming an organic insulation film having a relative dielectric constant of less than 4.0 and is smaller than the relative dielectric constant of said second insulation film.
7. The semiconductor memory device manufacturing process according to claim 5 , wherein the step of forming said second insulation film is the step of forming on said first insulation film an insulation film containing at least one of SiO 2 , Al 2 O 3 , CrO 2 , TiN, lead titanate zirconate, barium strontium titanate, niobium strontium bismuth tantalate, SrBi 2 Ta 2 O 9 , ZrSiO 4 , Y 2 O 3 , BaTiO 3 , La 2 O 3 , Gd 2 O 3 , and PrO 2 .