Semiconductor device and method manufacturing the same
View Patent ↗A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed, a first conductor 301 at least a portion of the peripheral surface of which is made of a material comprising copper as a main ingredient, and a first insulative diffusion barrier layer 203 covering at least a portion of the first conductor 301 . The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula (RO) n SiH 4−n (n is an integer in a range from 1 to 3, R represents an alkyl group, an aryl group or a derivative thereof), and an oxidative gas by a plasma CVD. Thus, a semiconductor device comprising copper wiring of high reliability and with less wiring delay time can be provided.
1. A semiconductor device comprising:
a substrate in which semiconductor elements are formed;
metal wiring for interconnecting the semiconductor elements; and
an insulative diffusion barrier layer directly covering at least a portion of the metal wiring,
wherein at least a portion of the surface on the periphery of the metal wiring has a region made of a material comprising copper as a main ingredient,
a portion of the region made of the material comprising copper as the main ingredient is in contact with the insulative diffusion barrier layer,
the insulative diffusion barrier layer is formed to have a dielectric being 5 or less, a leak current at a test temperature of 140° C., under an electric field strength of 2 MV/cm being 10 nA or less per 1 cm 2 , and a dielectric breakdown lifetime when copper is used as an anode at a temperature of 140° C. being at least 100 years, and
the insulative diffusion barrier layer has oxygen, silicon and nitrogen as main constituent elements, a concentration of the nitrogen being from 0.5 to 12.5 atm %.
2. A semiconductor device as defined in claim 1 , wherein a region just below the insulative diffusion barrier layer comprises the metal wiring and an insulative etching stopper layer, a portion of the metal wiring in contact with the insulative diffusion barrier layer has a region made of a material comprising copper as a main ingredient, and a dry etching rate of the insulative etching stopper layer is one-half or less of that of the insulative diffusion barrier layer.
3. A semiconductor device as defined in claim 2 , wherein the insulative etching stopper layer comprises an insulative layer selected from silicon carbide, silicon nitride, organic group-containing silicon oxide and aluminum oxide as a main ingredient.