Electrophoretic processes for the selective deposition of materials on a semiconducting device
View Patent ↗The present invention provides a process and apparatus for selectively depositing materials on a semiconductor device, such as depositing phosphors or other optical materials on a light emitting diode (LED), using an electrophoretic deposition process. The semiconductor device comprises a p-side and an n-side. A first biasing voltage is applied between an anode and the p-side of the semiconductor device. A second biasing voltage is applied between the p-side and the n-side of the semiconductor device. The relative biasing of the p-side and the n-side determines where coating is deposited on the semiconductor device. An optional pre-coating process is used to deposit a high resistivity dielectric material, such as silica, on the semiconductor device. The pre-coating can even the electric field on the surface of the semiconductor device, where local features such as metal connections or passivation layers disturb the electric field during phosphor deposition without pre-coating.
1. A method for coating a semiconductor device, the semiconductor device having a p-side and an n-side, the method comprising:
providing a bath, the bath containing suspended particles;
providing an anode, the anode disposed in the bath;
disposing the semiconductor device in the bath;
applying a first biasing voltage between the anode and the p-side, the anode held at a positive voltage with respect to the p-side; and
applying a second biasing voltage between the p-side and the n-side.
2. The method of claim 1 wherein the second biasing voltage is selected from the group consisting of reverse bias, zero bias, and forward bias.
3. The method of claim 1 wherein applying a second biasing voltage between the p-side and the n-side further comprises applying a second biasing voltage switchable between a reverse bias, a zero bias, and a forward bias.
4. The method of claim 1 wherein applying a second biasing voltage between the p-side and the n-side comprises applying a voltage between the anode and the n-side.
5. The method of claim 1 wherein the semiconductor device is selected from the group consisting of a light emitting diode (LED), an electroluminescent device, a laser device, a pnp transistor, an npn transistor, a Charge-Coupled Device CCD, a CMOS imager, an amorphous silicon device, an X-ray imager, a phototransistor, a semiconductor, and a semiconductor device array.
6. The method of claim 1 wherein the semiconductor device is one of a plurality of semiconductor devices disposed in the bath.
7. The method of claim 1 further comprising pre-coating the semiconductor device.
8. The method of claim 7 wherein pre-coating the semiconductor device comprises pre-coating the semiconductor device with a high resistivity dielectric material coating.
9. The method of claim 1 further comprising masking the semiconductor device.
10. The method of claim 1 wherein the suspended particles are phosphor particles.
11. The method of claim 1 wherein the suspended particles are selected from the group consisting of optical materials, high resistivity dielectric materials, phosphor, silica, titanium dioxide, and combinations thereof.
12. The method of claim 1 wherein applying a second biasing voltage between the p-side and the n-side further comprises applying a second biasing voltage between the p-side and the n-side to cause the semiconductor device to emit light, the light ionizing the bath.
13. A method for coating a light emitting diode, the light emitting diode having a p-side and an n-side, the method comprising:
providing a bath, the bath containing phosphor particles and magnesium nitrate;
providing an anode, the anode disposed in the bath;
disposing the light emitting diode in the bath;
applying a first biasing voltage between the anode and the p-side, the anode held at a positive voltage with respect to the p-side; and
applying a second biasing voltage between the p-side and the n-side.
14. The method of claim 13 wherein applying a second biasing voltage between the p-side and the n-side further comprises switching the second biasing voltage between a reverse bias, a zero bias, and a forward bias.
15. The method of claim 13 wherein applying a second biasing voltage between the p-side and the n-side comprises applying a voltage between the anode and the n-side.
16. The method of claim 13 further comprising pre-coating the light emitting diode with silica.
17. The method of claim 13 further comprising masking the semiconductor device.