IP Library › Granted Patent US 6,713,333
Granted Patent Utility
US 6,713,333 · Confirmation No. 8527

METHOD FOR FABRICATING A MOSFET

Inventor: Satoru Mayuzumi
Patented Case View Patent ↗ View Publication ↗
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 Code Description Pages PDF
2004-02-10 IFEE Issue Fee Payment (PTO-85B) 1 View
2002-10-23 TRNA Transmittal of New Application 1 View
2002-10-23 A.PE Preliminary Amendment 8 View
2002-10-23 SPEC Specification 23 View
2002-10-23 CLM Claims 4 View
2002-10-23 ABST Abstract 1 View
2002-10-23 DRW Drawings-only black and white line drawings 13 View
2002-10-23 OATH Oath or Declaration filed 2 View
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Quick Facts
Patent No.
US 6,713,333
App. No.
10/278,475
Filed
2002-10-23
Granted
2004-03-30
Pub. No.
US20030082861A1
Art Unit
2813
PTA
-86 days