Method and device for reducing the contact resistance in organic field-effect transistors by embedding nanoparticles to produce field boosting
View Patent ↗A method for selectively doping an organic semiconductor 1 material in the region of a contact area . 1 formed between a contact and the organic semiconductor material disposed thereon includes introducing the dopant with the aid of nanoparticles, the nanoparticles being disposed in a manner adjoining the contact area and, as a result, only a very narrow region of the organic semiconductor material being doped. The field increase effected by the nanoparticles results in a further reduction of the contact resistance.
1. A semiconductor device configuration, comprising:
at least one contact of a contact material;
a layer of an organic semiconductor material, said layer disposed at said at least one contact to form a contact area therebetween;
nanoparticles disposed at said contact area; and
said organic semiconductor material having a doping in a vicinity of said nanoparticles, said doping being introduced by said nanoparticles, and said doping being selected from the group consisting of a protonated form of said organic semiconductor material, a deprotonated form of said organic semiconductor material, an oxidized form of said organic semiconductor material, a reduced form of said organic semiconductor material, and a charge transfer complex constructed from said organic semiconductor material and said contact material.
2. The configuration according to claim 1 , wherein said nanoparticles are of a material having a different work function than said contact material.
3. The configuration according to claim 1 , wherein:
said contact forms at least one of a source electrode and a drain electrode of a field-effect transistor; and
said layer of said organic semiconductor material is disposed between said source electrode and said drain electrode.
4. The configuration according to claim 1 , wherein:
the configuration is a field-effect transistor;
said contact forms at least one of a source electrode and a drain electrode; and
said layer of said organic semiconductor material is disposed between said source electrode and said drain electrode.
5. In a semicondudtor device, a configuration comprising:
at least one contact of a contact material;
a layer of an organic semiconductor material, said layer disposed at said at least one contact to form a contact area therebetween;
nanoparticles disposed at the contact area; and
said organic semiconductor material having a doping in a vicinity of said nanoparticles, said doping being introduced by said nanoparticles, and said doping being selected from the group consisting of a protonated form of said organic semiconductor material, a deprotonated form of said organic semiconductor material, an oxidized form of said organic semiconductor material, a reduced form of said organic semiconductor material, and a charge transfer complex constructed from said organic semiconductor material and said contact material.
6. The configuration according to claim 5 , wherein said nanoparticles are of a material having a different work function than said contact material.
7. The configuration according to claim 5 , wherein:
said contact forms at least one of a source electrode and a drain electrode of a field-effect transistor; and
said layer of said organic semiconductor material is disposed between said source electrode and said drain electrode.
8. The configuration according to claim 5 , wherein:
the configuration is a field-effect transistor;
said contact forms at least one of a source electrode and a drain electrode; and
said layer of said organic, semiconductor material is disposed between said source electrode and said drain electrode.