Etch-stop material for improved manufacture of magnetic devices
A method for fabricating a magnetoresistive device having at least one active region, which may be formed into a magnetic memory bit, sensor element and/or other device, is provided. In forming the magnetoresistive device, a magnetoresistive stack, such as a giant magnetoresistive stack, is formed over a substrate. In addition, a substantially antireflective cap layer formed from titanium nitride, aluminum nitride, and/or other substantially antireflective material, as opposed to the materials commonly used to form a cap layer, is formed over the magnetoresistive stack. The substantially antireflective cap layer is usable as an etch stop for later processing in forming the magnetic memory bit, sensor element and/or other device.
1. A method for fabricating a magnetoresistive device comprising, in combination:
forming a current-in-plane magnetoresistive stack;
forming a substantially-antireflective-cap layer over the current-in-plane magnetoresistive stack, wherein the substantially-antireflective-cap layer has a sufficiently high resistivity so to limit current shunting of the current-in-plane magnetoresistive stack through the substantially-antireflective-cap layer, wherein the substantially-antireflective-cap layer is usable as an etch stop for the current-in-plane magnetoresistive stack, and wherein the substantially-anti-reflective-cap layer is in contact with the magnetoresistive stack;
forming a dielectric layer over the substantially-antireflective-cap layer;
patterning the dielectric layer in the form of at least one active region, wherein the active region is oriented normal to the substantially-antireflective-cap layer; and
forming an insulating layer over a substrate and under the current-in-plane magnetoresistive stack.
2. A method for fabricating a magnetoresistive device comprising, in combination:
forming a current-in-plane magnetoresistive stack;
forming a substantially-antireflective-cap layer over the current-in-plane magnetoresistive stack, wherein the substantially-antireflective-cap layer has a sufficiently high resistivity so to limit current shunting of the current-in-plane magnetoresistive stack through the substantially-antireflective-cap layer, wherein the substantially-antireflective-cap layer is usable as an etch stop for the current-in-plane magnetoresistive stack, and wherein the substantially-anti-reflective-cap layer is in contact with the magnetoresistive stack;
forming a dielectric layer over the substantially-antireflective-cap layer;
patterning the dielectric layer in the form of at least one active region, wherein the active region is oriented normal to the substantially-antireflective-cap layer; and
photomasking the dielectric layer using an active-region photomask, wherein the photolithography of the dielectric layer is substantially unaffected by the substantially-antireflective-cap layer.
3. A method for fabricating a magnetoresistive device comprising, in combination:
forming a current-in-plane magnetoresistive stack;
forming a substantially-antireflective-cap layer over the current-in-plane magnetoresistive stack, wherein the substantially-antireflective-cap layer has a sufficiently high resistivity so to limit current shunting of the current-in-plane magnetoresistive stack through the substantially-antireflective-cap layer, wherein the substantially-antireflective-cap layer is usable as an etch stop for the current-in-plane magnetoresistive stack, and wherein the substantially-anti-reflective-cap layer is in contact with the magnetoresistive stack;
forming a dielectric layer over the substantially-antireflective-cap layer;
patterning the dielectric layer in the form of at least one active region, wherein the active region is oriented normal to the substantially-antireflective-cap layer; and
etching the dielectric layer to form an active-region mask.
4. The method of claim 3 , wherein the etching of the dielectric layer effectively ceases at the interface between the substantially-antireflective-cap layer and the dielectric layer.
5. The method of claim 4 , further comprising etching a portion of the substantially-antireflective-cap layer in the form of the active-region mask.
6. The method of claim 5 , further comprising etching a portion of the current-in-plane magnetoresistive stack to form the at least one active region.
7. The method of claim 6 , further comprising forming a second-dielectric layer over the at least one active region.
8. A method for fabricating a magnetoresistive device comprising, in combination:
forming a current-in-plane magnetoresistive stack;
forming a substantially-antireflective-cap layer over the current-in-plane magnetoresistive stack, wherein the substantially-antireflective-cap layer has a sufficiently high resistivity so to limit current shunting of the current-in-plane magnetoresistive stack through the substantially-antireflective-cap layer, wherein the substantially-antireflective-cap layer is usable as an etch stop for the current-in-plane magnetoresistive stack, wherein the substantially-anti-reflective-cap layer is in contact with the magnetoresistive stack, and wherein the substantially-antireflective-cap layer is formed at a substrate temperature of less than about 200 degrees C.;
forming a dielectric layer over the substantially-antireflective-cap layer; and
patterning the dielectric layer in the form of at least one active region, wherein the active region is oriented normal to the substantially-antireflective-cap layer.