Crystal-less oscillator transceiver
View Patent ↗A radio frequency (RF) transceiver of the type having at least one radio frequency integrated chip (RFIC), a reference oscillator and a phase-locked oscillator, utilizes non-crystal resonator structures in place of crystal oscillators to produce the reference oscillator frequency functionality and the phase-locked oscillator frequency functionality. Film bulk acoustic resonator (FBAR) structures including bulk acoustic wave (BAW) resonators are monolithically integrated or flip chipped with the RFIC to reduce size, weight and cost of the transceiver. The RF transceiver may be a TDMA or CDMA transceiver.
1. A radio frequency (RF) transceiver of the type having at least one radio frequency integrated chip (RFIC), a reference oscillator and a phase-locked oscillator, characterized in that said reference oscillator comprises a first resonator structure wherein said first resonator structure is a first film bulk acoustic resonator (FBAR) structure and said phase-locked oscillator comprises a second resonator structure wherein said second resonator structure is a second film bulk acoustic resonator (FBAR) structure further characterized in that said second resonator structure comprises a low Q based UHFVCO and said first resonator structure is a first film bulk acoustic resonator (FBAR) structure monolithically integrated with a first radio frequency integrated chip (RFIC) to define a high frequency (>3 gigahertz) reference oscillator frequency functionality.
2. The RF transceiver according to claim 1 wherein said first and second FBAR structures are monolithically integrated with the RFIC chip.
3. The RF transceiver according to claim 2 characterized in that the RFIC chip further includes a phase-locked loop (PLL) chip.
4. The RF transceiver according to claim 1 whereinsaid first resonator structure and said second resonator structure further comprise bulk acoustic wave resonator (BAW) structures.
5. The RF transceiver according to claim 1 further characterized in that the quality factor (Q) of said first and second resonator structures has a value in the range of about 400 to 8000.
6. The RF transceiver according to claim 1 further characterized by a TDMA RF transceiver.
7. The RF transceiver according to claim 1 further characterized by a CDMA RF transceiver.
8. A radio frequency (RF) transceiver of the type having at least one radio frequency integrated chip (RFIC), a reference oscillator and a phase-locked oscillator, characterized in that said reference oscillator comprises a first resonator structure wherein said first resonator structure is a first film bulk acoustic resonator (FBAR) structure and said phase-locked oscillator comprises a second resonator structure wherein said second resonator structure is a second film bulk resonator (FBAR) structure further characterized in that said second resonator structure comprises a low Q based UHFVCO and said first resonator structure is a first film bulk acoustic resonator (FBAR) structure flip chipped with a first radio frequency integrated chip (RFIC) to define a high frequency (>3 gigahertz) reference oscillator frequency functionality.
9. The RF transceiver according to claim 8 wherein said first and second FBAR structures are flip chipped on the RFIC chip.