Semiconductor device including semiconductor element of high breakdown voltage
View Patent ↗A first NMOS transistor has its source connected to ground and its drain connected to the source of a second NMOS transistor of high breakdown voltage via an inductor. The second NMOS transistor of high breakdown voltage has its drain connected to a power supply line Vdd via the inductor. An output Vout is provided from the drain of the second NMOS transistor. When an input voltage Vin is applied to the gate of the first NMOS transistor and a bias voltage Vg 2 is applied to the gate of the second NMOS transistor, the first and second NMOS transistors operate. The voltage amplitude of the load end of the second NMOS transistor of high breakdown voltage connected to the inductor swings about the power supply voltage. The voltage amplitude increases as the output voltage becomes higher.
1. A semiconductor device including a semiconductor element of high breakdown voltage, comprising:
a first transistor including first and second conduction terminals rendered electrically conductive therebetween, said first conduction terminal having a first voltage applied;
a second transistor of a breakdown voltage higher than the breakdown voltage of said first transistor, and including third and fourth conduction terminals rendered electrically conductive therebetween, a second voltage higher than said first voltage to the third conduction terminal of said second transistor through a load element; and
a passive element connected between the second conduction terminal of said first transistor and the fourth conduction terminal of said second transistor.
2. The semiconductor device including a semiconductor element of high breakdown voltage according to claim 1 , further comprising a first capacitor connected between the second conduction terminal of said first transistor and a control terminal that controls conduction of said second transistor, wherein said first voltage is applied to the fourth conduction terminal of said second transistor through a second capacitor.
3. A semiconductor device including a semiconductor element of high breakdown voltage, comprising:
a first transistor including first and second conduction terminals rendered electrically conductive therebetween;
a second transistor of a breakdown voltage higher than the breakdown voltage of said first transistor, including third and fourth conduction terminals rendered electrically conductive therebetween, said third conduction terminal being connected to the second conduction terminal of said first transistor; and
a third transistor of a breakdown voltage higher than the breakdown voltage of said first transistor, including fifth and sixth conduction terminals rendered electrically conductive therebetween, said fifth conduction terminal being connected to the second conduction terminal of said first transistor in parallel with said second transistor.
4. The semiconductor device including a semiconductor element of high breakdown voltage according to claim 3 , wherein said first voltage is applied to the first conduction terminal of said first transistor,
a second voltage higher than said first voltage is applied to the fourth conduction terminal of said second transistor through a first load element,
said second voltage is applied to the sixth conduction terminal of said third transistor through a second load element,
a first signal is applied to a control terminal controlling conduction of said first transistor, and
two signals having a component of a frequency lower than the frequency of said first signal are respectively applied to control terminals controlling conduction of said second and third transistors.